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    Lateral power MOSFET with high breakdown voltage and low on-resistance
    2.
    发明授权
    Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
    具有高击穿电压和低导通电阻的侧向功率MOSFET

    公开(公告)号：US07989890B2

    公开(公告)日：2011-08-02

    申请号：US12205961

    申请日：2008-09-08

    申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    IPC分类号： H01L29/78

    CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

    摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

    Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
    3.
    发明申请
    Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
    具有高击穿电压和低导通电阻的侧向功率MOSFET

    公开(公告)号：US20090001462A1

    公开(公告)日：2009-01-01

    申请号：US12205961

    申请日：2008-09-08

    申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    IPC分类号： H01L29/76

    CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

    摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

    Lateral power MOSFET with high breakdown voltage and low on-resistance
    4.
    发明授权
    Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
    具有高击穿电压和低导通电阻的侧向功率MOSFET

    公开(公告)号：US08389341B2

    公开(公告)日：2013-03-05

    申请号：US13175246

    申请日：2011-07-01

    申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

    摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

    Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
    5.
    发明申请
    Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
    具有高击穿电压和低导通电阻的侧向功率MOSFET

    公开(公告)号：US20120003803A1

    公开(公告)日：2012-01-05

    申请号：US13175246

    申请日：2011-07-01

    申请人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    发明人： Tsung-Yi Huang ,  Puo-Yu Chiang ,  Ruey-Hsin Liu ,  Shun-Liang Hsu ,  Chyi-Chyuan Huang ,  Fu-Hsin Chen ,  Eric Huang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/0847 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.

    摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

    Breakdown voltages of ultra-high voltage devices by forming tunnels
    7.
    发明授权
    Breakdown voltages of ultra-high voltage devices by forming tunnels 有权
    通过形成隧道的超高压装置的击穿电压

    公开(公告)号：US07960786B2

    公开(公告)日：2011-06-14

    申请号：US12170246

    申请日：2008-07-09

    申请人： Eric Huang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Chyi-Chyuan Huang ,  Chung-Yeh Wu

    发明人： Eric Huang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Chyi-Chyuan Huang ,  Chung-Yeh Wu

    IPC分类号： H01L29/78

    CPC分类号： H01L29/0847 ,  H01L21/266 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW, wherein at least one of the pre-HVW, the HVW, and the field ring comprises at least two tunnels; an insulation region over the field ring and a portion of the HVW; a drain region in the HVW and adjacent the insulation region; a gate electrode over a portion the insulation region; and a source region on an opposite side of the gate electrode than the drain region.

    摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; 所述第一导电类型的场环占据所述HVW的顶部部分，其中所述预HVW，所述HVW和所述场环中的至少一个包括至少两个隧道; 在场环上的绝缘区域和HVW的一部分; 在HVW中的漏极区域并且邻近绝缘区域; 绝缘区域的一部分上的栅电极; 以及栅极电极的与漏极区域相反的一侧的源极区域。

    Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels
    8.
    发明申请
    Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels 有权
    通过形成隧道的超高压器件的故障电压

    公开(公告)号：US20100006935A1

    公开(公告)日：2010-01-14

    申请号：US12170246

    申请日：2008-07-09

    申请人： Eric Huang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Chyi-Chyuan Huang ,  Chung-Yeh Wu

    发明人： Eric Huang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Chyi-Chyuan Huang ,  Chung-Yeh Wu

    IPC分类号： H01L29/78

    CPC分类号： H01L29/0847 ,  H01L21/266 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW, wherein at least one of the pre-HVW, the HVW, and the field ring comprises at least two tunnels; an insulation region over the field ring and a portion of the HVW; a drain region in the HVW and adjacent the insulation region; a gate electrode over a portion the insulation region; and a source region on an opposite side of the gate electrode than the drain region.

    摘要翻译： 半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所​​述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; 所述第一导电类型的场环占据所述HVW的顶部部分，其中所述预HVW，所述HVW和所述场环中的至少一个包括至少两个隧道; 在场环上的绝缘区域和HVW的一部分; 在HVW中的漏极区域并且邻近绝缘区域; 绝缘区域的一部分上的栅电极; 以及栅极电极的与漏极区域相反的一侧的源极区域。

    HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE
    9.
    发明申请
    HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE 有权
    具有低导通电阻的高压装置

    公开(公告)号：US20080197410A1

    公开(公告)日：2008-08-21

    申请号：US11676624

    申请日：2007-02-20

    申请人： Puo-Yu Chiang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Ting-Pang Li ,  Chung-Yeh Wu

    发明人： Puo-Yu Chiang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Ting-Pang Li ,  Chung-Yeh Wu

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7835 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/66659

    摘要： A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.

    摘要翻译： 高压晶体管器件具有在半导体衬底中具有第一导电类型的第一阱区域和在半导体衬底中基本上邻近于第一阱区域的具有第二导电类型的第二阱区域。 具有第二导电类型的场环形成在第一阱区的一部分上，并且场环的顶表面具有至少一个弯曲凹槽。 场场电介质区域形成在场环上并延伸到第一阱区的一部分。 栅极结构形成在场介电区域的一部分上并延伸到第二阱区域的一部分。

    High voltage device with low on-resistance
    10.
    发明授权
    High voltage device with low on-resistance 有权
    具有低导通电阻的高压器件

    公开(公告)号：US07508032B2

    公开(公告)日：2009-03-24

    申请号：US11676624

    申请日：2007-02-20

    申请人： Puo-Yu Chiang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Ting-Pang Li ,  Chung-Yeh Wu

    发明人： Puo-Yu Chiang ,  Tsung-Yi Huang ,  Fu-Hsin Chen ,  Ting-Pang Li ,  Chung-Yeh Wu

    IPC分类号： H01L29/94

    CPC分类号： H01L29/7835 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/66659

    摘要： A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.

    摘要翻译： 高压晶体管器件具有在半导体衬底中具有第一导电类型的第一阱区域和在半导体衬底中基本上邻近于第一阱区域的具有第二导电类型的第二阱区域。 具有第二导电类型的场环形成在第一阱区的一部分上，并且场环的顶表面具有至少一个弯曲凹槽。 场场电介质区域形成在场环上并延伸到第一阱区的一部分。 栅极结构形成在场介电区域的一部分上并延伸到第二阱区域的一部分。