公开(公告)号：US07138344B2

公开(公告)日：2006-11-21

申请号：US10671813

申请日：2003-09-25

申请人： Eric Neyret ,  Christophe Maleville ,  Ludovic Ecarnot

发明人： Eric Neyret ,  Christophe Maleville ,  Ludovic Ecarnot

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/324 ,  H01L21/477

CPC分类号： H01L21/3247 ,  H01L21/324 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76283

摘要： A method for minimizing slip line faults on a surface of a semiconductor wafer that has been obtained using a transfer technique. The method includes heating the semiconductor wafer from an ambient temperature to a first higher temperature and pausing the heating at the first higher temperature for a time sufficient to stabilize the wafer. Then the wafer is heated further from the first higher temperature to a target higher temperature during a predetermined time interval. The further heating during an initial portion of the time interval is conducted at a relatively low heating rate and the heating during a final portion of the time interval is conducted at a relatively higher heating rate to thus minimize slip line faults in the surface of the wafer.

摘要翻译： 一种用于使用转印技术获得的半导体晶片的表面上的滑动线故障最小化的方法。 该方法包括将半导体晶片从环境温度加热到第一较高温度并暂停在第一较高温度下的加热足以使晶片稳定的时间。 然后在预定时间间隔内将晶片从第一较高温度进一步加热到目标较高温度。 在时间间隔的初始部分期间的进一步加热以相对低的加热速率进行，并且在时间间隔的最后部分期间的加热以相对较高的加热速率进行，从而使晶片表面中的滑移线故障最小化 。

公开(公告)号：US07749910B2

公开(公告)日：2010-07-06

申请号：US11189849

申请日：2005-07-27

申请人： Eric Neyret ,  Ludovic Ecarnot ,  Christophe Maleville

发明人： Eric Neyret ,  Ludovic Ecarnot ,  Christophe Maleville

IPC分类号： H01L21/302

CPC分类号： H01L21/3247 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/76254

摘要： The invention provides a method for reducing the roughness of a free surface of a semiconductor wafer that includes removing material from the free surface of the wafer to provide a treated wafer, and performing a first rapid thermal annealing on the treated wafer in a pure argon atmosphere to substantially reduce the roughness of the free surface of the treated wafer. The material removal is selected and conducted to improve the effectiveness of the subsequent rapid thermal annealing in reducing the roughness of the free surface of the treated wafer.

摘要翻译： 本发明提供了一种降低半导体晶片的自由表面的粗糙度的方法，其包括从晶片的自由表面去除材料以提供经处理的晶片，以及在纯氩气氛中对经处理的晶片进行第一次快速热退火 以显着降低经处理的晶片的自由表面的粗糙度。 选择和进行材料去除以提高随后的快速热退火的效果，以降低经处理的晶片的自由表面的粗糙度。

公开(公告)号：US20060035445A1

公开(公告)日：2006-02-16

申请号：US11189849

申请日：2005-07-27

申请人： Eric Neyret ,  Ludovic Ecarnot ,  Christophe Maleville

发明人： Eric Neyret ,  Ludovic Ecarnot ,  Christophe Maleville

IPC分类号： H01L21/322

CPC分类号： H01L21/3247 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/76254

摘要： The invention provides a method for reducing the roughness of a free surface of a semiconductor wafer that includes removing material from the free surface of the wafer to provide a treated wafer, and performing a first rapid thermal annealing on the treated wafer in a pure argon atmosphere to substantially reduce the roughness of the free surface of the treated wafer. The material removal is selected and conducted to improve the effectiveness of the subsequent rapid thermal annealing in reducing the roughness of the free surface of the treated wafer.

摘要翻译： 本发明提供了一种降低半导体晶片的自由表面的粗糙度的方法，其包括从晶片的自由表面去除材料以提供经处理的晶片，以及在纯氩气氛中对经处理的晶片进行第一次快速热退火 以显着降低经处理的晶片的自由表面的粗糙度。 选择和进行材料去除以提高随后的快速热退火的效果，以降低经处理的晶片的自由表面的粗糙度。

公开(公告)号：US20060024908A1

公开(公告)日：2006-02-02

申请号：US11189899

申请日：2005-07-27

申请人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

发明人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

IPC分类号： H01L21/20

CPC分类号： H01L21/3247 ,  H01L21/302 ,  H01L21/324 ,  H01L21/76254

摘要： A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.

摘要翻译： 一种用于降低半导体晶片的自由表面的粗糙度的方法，其包括在退火室中建立第一气氛，用第二气氛代替第一气氛，所述第二气氛包括选择的量和基本上消除或减少污染物的量 晶片，并且将晶片的自由表面暴露于第二气氛以基本上消除或减少其上的污染物。 然后将第二气氛替换为包括纯的第三气氛，并且在退火室中暴露于第三气氛的晶片上进行快速热退火，以显着降低晶片的自由表面的粗糙度。

公开(公告)号：US20120021613A1

公开(公告)日：2012-01-26

申请号：US13257164

申请日：2010-03-17

申请人： Walter Schwarzenbach ,  Sébastien Kerdiles ,  Patrick Reynaud ,  Ludovic Ecarnot ,  Eric Neyret

发明人： Walter Schwarzenbach ,  Sébastien Kerdiles ,  Patrick Reynaud ,  Ludovic Ecarnot ,  Eric Neyret

IPC分类号： H01L21/316

CPC分类号： H01L21/76254 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/30604 ,  H01L21/31662

摘要： The invention relates to a finishing method for a silicon-on-insulator (SOI) substrate that includes an oxide layer buried between an active silicon layer and a support layer of silicon. The method includes applying the following steps in succession: a first rapid thermal annealing (RTA) of the SOI substrate; a sacrificial oxidation of the active silicon layer of the substrate conducted to remove a first oxide thickness; a second RTA of the substrate; and a second sacrificial oxidation of the active silicon layer conducted to remove a second oxide thickness that is thinner than the first oxide thickness.

摘要翻译： 本发明涉及一种绝缘体上硅（SOI）衬底的精加工方法，其包括埋在有源硅层和硅支承层之间的氧化物层。 该方法包括以下步骤：SOI衬底的第一快速热退火（RTA）; 用于去除第一氧化物厚度的衬底的有源硅层的牺牲氧化; 底物的第二RTA; 并且对所述有源硅层进行第二牺牲氧化，以去除比所述第一氧化物厚度更薄的第二氧化物厚度。

公开(公告)号：US06962858B2

公开(公告)日：2005-11-08

申请号：US10750443

申请日：2003-12-30

申请人： Eric Neyret ,  Ludovic Ecarnot

发明人： Eric Neyret ,  Ludovic Ecarnot

IPC分类号： H01L21/02 ,  H01L21/26 ,  H01L21/302 ,  H01L21/324 ,  H01L21/762 ,  H01L27/12 ,  H01L21/322

CPC分类号： H01L21/3247 ,  H01L21/302 ,  H01L21/324 ,  H01L21/76254

摘要： The invention provides a method of reducing the roughness of the free surface of a wafer of semiconductor material by applying a rapid thermal annealing process under a pure argon atmosphere for a time sufficient to uniformly heat and smooth the free surface of the wafer.

摘要翻译： 本发明提供了一种通过在纯氩气氛下施加快速热退火工艺足以使晶片的自由表面均匀加热和平滑的时间来减少半导体材料晶片的自由表面的粗糙度的方法。

公开(公告)号：US08389412B2

公开(公告)日：2013-03-05

申请号：US13257164

申请日：2010-03-17

申请人： Walter Schwarzenbach ,  Sébastien Kerdiles ,  Patrick Reynaud ,  Ludovic Ecarnot ,  Eric Neyret

发明人： Walter Schwarzenbach ,  Sébastien Kerdiles ,  Patrick Reynaud ,  Ludovic Ecarnot ,  Eric Neyret

IPC分类号： H01L21/311

CPC分类号： H01L21/76254 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/30604 ,  H01L21/31662

摘要： The invention relates to a finishing method for a silicon-on-insulator (SOI) substrate that includes an oxide layer buried between an active silicon layer and a support layer of silicon. The method includes applying the following steps in succession: a first rapid thermal annealing (RTA) of the SOI substrate; a sacrificial oxidation of the active silicon layer of the substrate conducted to remove a first oxide thickness; a second RTA of the substrate; and a second sacrificial oxidation of the active silicon layer conducted to remove a second oxide thickness that is thinner than the first oxide thickness.

摘要翻译： 本发明涉及一种绝缘体上硅（SOI）衬底的精加工方法，其包括埋在有源硅层和硅支承层之间的氧化物层。 该方法包括以下步骤：SOI衬底的第一快速热退火（RTA）; 用于去除第一氧化物厚度的衬底的有源硅层的牺牲氧化; 底物的第二RTA; 并且对所述有源硅层进行第二牺牲氧化，以去除比所述第一氧化物厚度更薄的第二氧化物厚度。

公开(公告)号：US07883628B2

公开(公告)日：2011-02-08

申请号：US11189899

申请日：2005-07-27

申请人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

发明人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

IPC分类号： B44C1/22 ,  H01L21/302

CPC分类号： H01L21/3247 ,  H01L21/302 ,  H01L21/324 ,  H01L21/76254

摘要： A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.

摘要翻译： 一种用于降低半导体晶片的自由表面的粗糙度的方法，其包括在退火室中建立第一气氛，用第二气氛代替第一气氛，所述第二气氛包括选择的量和基本上消除或减少污染物的量 晶片，并且将晶片的自由表面暴露于第二气氛以基本上消除或减少其上的污染物。 然后将第二气氛替换为包括纯的第三气氛，并且在退火室中暴露于第三气氛的晶片上进行快速热退火，以显着降低晶片的自由表面的粗糙度。

公开(公告)号：US20050094990A1

公开(公告)日：2005-05-05

申请号：US11008928

申请日：2004-12-13

申请人： Eric Neyret ,  Christophe Maleville

发明人： Eric Neyret ,  Christophe Maleville

IPC分类号： H01L21/00 ,  H01L21/324 ,  H01L21/762 ,  H01L21/3205 ,  A21B2/00 ,  F26B19/00 ,  H01L21/26 ,  H01L21/42 ,  H01L21/4763 ,  H01L21/477

CPC分类号： H01L21/3247 ,  H01L21/67103 ,  H01L21/76251 ,  H01L21/76254

摘要： A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes selecting thickness values for the layers of the wafer to provide substantially equivalent heat absorption coefficients both in the central region and the edge of the wafer. This results in a substantially equivalent temperature being attained over the surface of the central region and the peripheral edge during thermal treatment. In turn, that prevents the appearance of slip lines on those surfaces while also preventing deformation of the wafer due to the thermal treatment. To achieve the desired thickness, layers or portions of layers can be selectively added or otherwise provided upon the central region or peripheral edge of the wafer, or on both, to modify the heat absorption coefficient of the wafer.

摘要翻译： 一种用于热处理具有各自具有表面的中心区域和周缘的多层半导体晶片的方法。 该方法包括选择晶片层的厚度值，以在晶片的中心区域和边缘提供基本相等的吸热系数。 这导致在热处理期间在中心区域和外围边缘的表面上获得基本相当的温度。 反过来，这也防止了在这些表面上的滑动线的出现，同时也防止了由于热处理导致的晶片的变形。 为了实现所需的厚度，层或层的一部分可以选择性地添加或以其他方式设置在晶片的中心区域或周边边缘上，或者在两者上，以改变晶片的吸热系数。

公开(公告)号：US07049250B2

公开(公告)日：2006-05-23

申请号：US11008928

申请日：2004-12-13

申请人： Eric Neyret ,  Christophe Maleville

发明人： Eric Neyret ,  Christophe Maleville

IPC分类号： H01L21/324 ,  H01L21/477 ,  H01L21/42

CPC分类号： H01L21/3247 ,  H01L21/67103 ,  H01L21/76251 ,  H01L21/76254

摘要： A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes selecting thickness values for the layers of the wafer to provide substantially equivalent heat absorption coefficients both in the central region and the edge of the wafer. This results in a substantially equivalent temperature being attained over the surface of the central region and the peripheral edge during thermal treatment. In turn, that prevents the appearance of slip lines on those surfaces while also preventing deformation of the wafer due to the thermal treatment. To achieve the desired thickness, layers or portions of layers can be selectively added or otherwise provided upon the central region or peripheral edge of the wafer, or on both, to modify the heat absorption coefficient of the wafer.

摘要翻译： 一种用于热处理具有各自具有表面的中心区域和周缘的多层半导体晶片的方法。 该方法包括选择晶片层的厚度值，以在晶片的中心区域和边缘提供基本相等的吸热系数。 这导致在热处理期间在中心区域和外围边缘的表面上获得基本相当的温度。 反过来，这也防止了在这些表面上的滑动线的出现，同时也防止了由于热处理导致的晶片的变形。 为了实现所需的厚度，层或层的一部分可以选择性地添加或以其他方式设置在晶片的中心区域或周边边缘上，或者在两者上，以改变晶片的吸热系数。