公开(公告)号：US20120038904A1

公开(公告)日：2012-02-16

申请号：US13187880

申请日：2011-07-21

申请人： Eric R. FOSSUM ,  Yoon-Dong Park

发明人： Eric R. FOSSUM ,  Yoon-Dong Park

IPC分类号： G01C3/08 ,  H01L27/148

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14625

摘要： A unit pixel included in a photo-detection device, the unit pixel including a floating diffusion region in a semiconductor substrate, a ring-shaped collection gate over the semiconductor substrate, a ring-shaped drain gate over the semiconductor substrate, and a drain region in the semiconductor substrate, wherein the collection gate and the drain gate are respectively arranged between the floating diffusion region and the drain region.

摘要翻译： 包括在光检测装置中的单位像素，单位像素包括半导体衬底中的浮动扩散区域，半导体衬底上的环形收集栅极，半导体衬底上的环形漏极栅极和漏极区域 在半导体衬底中，其中集电栅极和漏极栅极分别布置在浮动扩散区域和漏极区域之间。

公开(公告)号：US20140008707A1

公开(公告)日：2014-01-09

申请号：US14022826

申请日：2013-09-10

申请人： Eric R. FOSSUM ,  Dae-Kil CHA ,  Young-Gu JIN ,  Yoon-Dong PARK ,  Soo-Jung HWANG

发明人： Eric R. FOSSUM ,  Dae-Kil CHA ,  Young-Gu JIN ,  Yoon-Dong PARK ,  Soo-Jung HWANG

IPC分类号： H01L31/112

CPC分类号： H01L31/112 ,  H01L27/14609 ,  H04N5/335 ,  H04N5/374

摘要： A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.

摘要翻译： 包括像素的高灵敏度图像传感器，包括单电子场效应晶体管（SEFET）的像素，在第二导电型衬底中包括第一导电类型阱的SEFET，以及阱中的第二导电类型源极和漏极区域 在源极和漏极区域之间的阱中的导电型栅极区域。

公开(公告)号：US20130119234A1

公开(公告)日：2013-05-16

申请号：US13615424

申请日：2012-09-13

申请人： Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

发明人： Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

IPC分类号： H01L27/146 ,  H01L31/103 ,  H01L31/105 ,  H01L31/101

CPC分类号： H01L27/14609 ,  H01L27/1461 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1808 ,  Y02E10/50

摘要： A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.

摘要翻译： 三维图像传感器的单位像素包括非硅光电检测器和至少一个读出电路。 非硅光电检测器形成在硅衬底上，非硅光电探测器包括至少一种非硅材料，以响应于入射光产生光电荷。 所述至少一个读出电路形成在所述硅衬底处，所述至少一个读出电路基于所述光电荷输出感测信号，并且所述感测信号产生与物体的距离的深度信息。