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    Method of processing a substrate in a lithography system
    3.
    发明授权
    Method of processing a substrate in a lithography system 有权
    在光刻系统中处理衬底的方法

    公开(公告)号：US08936994B2

    公开(公告)日：2015-01-20

    申请号：US13460191

    申请日：2012-04-30

    申请人： Vincent Sylvester Kuiper ,  Erwin Slot ,  Marcel Nicolaas Jacobus Van Kervinck ,  Guido De Boer ,  Hendrik Jan De Jong

    发明人： Vincent Sylvester Kuiper ,  Erwin Slot ,  Marcel Nicolaas Jacobus Van Kervinck ,  Guido De Boer ,  Hendrik Jan De Jong

    IPC分类号： H01L21/76 ,  G03F7/20 ,  H01L21/67 ,  H01L21/677

    CPC分类号： G03F7/70733 ,  G03F7/7075 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67745

    摘要： A method of processing substrates in a lithography system unit, the lithography system unit comprising at least two substrate preparation units, a load lock unit comprising at least first and second substrate positions, and a substrate handling robot for transferring substrates between the substrate preparation units and the load lock unit. The method comprises providing a sequence of substrates to be exposed to the robot, including an Nth substrate, an N−1th substrate, and an N+1th substrate; transferring the Nth substrate to a first one of the substrate preparation units; clamping the Nth substrate on a first substrate support structure in the first substrate preparation unit to form a clamped Nth substrate; transferring the clamped Nth substrate from the first substrate preparation unit to an unoccupied one of the first and second positions in the load lock unit; and exposing the clamped Nth substrate in the lithography system unit.

    摘要翻译： 一种在光刻系统单元中处理衬底的方法，所述光刻系统单元包括至少两个衬底制备单元，包括至少第一和第二衬底位置的负载锁定单元，以及用于在衬底制备单元和 负载锁定单元。 该方法包括提供要暴露于机器人的一系列衬底，包括第N衬底，第N-1衬底和第N + 1衬底; 将第N衬底转移到第一衬底制备单元中; 将第N基板夹持在第一基板制备单元中的第一基板支撑结构上以形成夹紧的第N基板; 将所夹紧的第N基板从所述第一基板准备单元传送到所述装载锁定单元中的第一和第二位置中未被占用的基板; 并将光刻系统单元中夹紧的第N基片曝光。

    Lithography system, sensor and measuring method
    5.
    发明申请
    Lithography system, sensor and measuring method 有权
    光刻系统，传感器和测量方法

    公开(公告)号：US20070057204A1

    公开(公告)日：2007-03-15

    申请号：US11521705

    申请日：2006-09-14

    申请人： Pieter Kruit ,  Erwin Slot ,  Tijs Teepen ,  Marco Jan Wieland ,  Stijn Willem Karel Steenbrink

    发明人： Pieter Kruit ,  Erwin Slot ,  Tijs Teepen ,  Marco Jan Wieland ,  Stijn Willem Karel Steenbrink

    IPC分类号： G21K5/10

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/2443 ,  H01J2237/2446 ,  H01J2237/30433 ,  H01J2237/31757

    摘要： Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

    摘要翻译： 用于测量带电粒子束系统的大量带电粒子束的特性的光刻系统，传感器和方法，特别是直接写入光刻系统，其中通过使用转换器元件将带电粒子束转换成光束，使用 与所述转换器元件成一直线的一系列光敏检测器，例如二极管，CCD或CMOS器件，用于检测所述光束，用所述光束曝光之后，从所述检测器电子地读出所得到的信号，利用所述信号确定 一个或多个光束特性的值，从而使用自动电子计算器，以及电子地调整带电粒子系统，以便校正超出所有或多个所述带电粒子束的规格范围值，每一个用于一个或多个属性， 基于所述计算的属性值。

    Lithography system, sensor and measuring method
    6.
    发明授权
    Lithography system, sensor and measuring method 有权
    光刻系统，传感器和测量方法

    公开(公告)号：US07868300B2

    公开(公告)日：2011-01-11

    申请号：US11521705

    申请日：2006-09-14

    申请人： Pieter Kruit ,  Erwin Slot ,  Tijs Frans Teepen ,  Marco Jan Jaco Wieland ,  Stijn Willem Karel Herman Steenbrink

    发明人： Pieter Kruit ,  Erwin Slot ,  Tijs Frans Teepen ,  Marco Jan Jaco Wieland ,  Stijn Willem Karel Herman Steenbrink

    IPC分类号： H01J3/00

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/2443 ,  H01J2237/2446 ,  H01J2237/30433 ,  H01J2237/31757

    摘要： Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

    摘要翻译： 用于测量带电粒子束系统的大量带电粒子束的特性的光刻系统，传感器和方法，特别是直接写入光刻系统，其中通过使用转换器元件将带电粒子束转换成光束，使用 与所述转换器元件成一直线的一系列光敏检测器，例如二极管，CCD或CMOS器件，用于检测所述光束，用所述光束曝光之后，从所述检测器电子地读出所得到的信号，利用所述信号确定 一个或多个光束特性的值，从而使用自动电子计算器，以及电子地调整带电粒子系统，以便校正超出所有或多个所述带电粒子束的规格范围值，每一个用于一个或多个属性， 基于所述计算的属性值。