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1.发明授权公开(公告)号：US06297174B2
公开(公告)日：2001-10-02
申请号：US09765276
申请日：2001-01-22
IPC分类号： H01L2131
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/31055 , H01L21/312
摘要： A method is disclosed for the formation of a planarizing coating film on the surface of a substrate having a stepped level difference under processing for the manufacture of semiconductor devices. The inventive method capable of giving a planarizing coating film of excellent planarity and good adhesion to the substrate surface comprises the steps of: (a) coating the substrate surface with a coating solution containing, as a film-forming solute uniformly dissolved in an ,organic solvent, a nitrogen-containing organic compound such as benzoguanamine and melamine having, in a molecule, at least two amino and/or imino groups each substituted for the nitrogen-bonded hydrogen atom by a hydroxyalkyl group or an alkoxyalkyl group to form a coating layer; (b) drying the coating layer by evaporating the organic solvent to form a dried coating layer; and (c) subjecting the dried coating layer to a baking treatment at a temperature in the range from 150 to 250° C.
摘要翻译： 公开了一种用于在半导体器件的制造处理中在具有台阶级差的衬底的表面上形成平坦化涂膜的方法。 能够赋予平坦化性和对基材表面的良好粘合性的平坦化涂膜的本发明的方法包括以下步骤：（a）用包含均匀溶解在有机物中的成膜溶质的涂布溶液涂布基材表面 溶剂，诸如苯并胍胺和三聚氰胺的含氮有机化合物在分子中具有至少两个氨基和/或亚氨基，其各自通过羟烷基或烷氧基烷基取代与氮键合的氢原子，以形成涂层 ;（b）通过蒸发有机溶剂干燥涂层以形成干燥的涂层; 和（c）在150-250℃的温度下对干燥的涂层进行烘烤处理。
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公开(公告)号：US06544717B2
公开(公告)日：2003-04-08
申请号：US09803907
申请日：2001-03-13
IPC分类号： G03C176
CPC分类号： G03F7/091 , Y10S430/128
摘要： Disclosed is a novel undercoating solution for the formation of an antireflection undercoating layer to intervene between the surface of a substrate and a photoresist layer to be patterned in the manufacturing process of semiconductor devices with an object to prevent adverse influences of the light reflecting at the substrate surface on the cross sectional profile of the patterned resist layer. The under-coating composition is a uniform solution which comprises: (A) a nitrogen-containing organic compound having, in a molecule, at least two amino groups substituted by at least one substituent group selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups such as an N,N-substituted benzoguanamine compound; (B) an organic acid or an inorganic acid of which the acid residue contains at least one atom of sulfur such as methane-sulfonic acid and dodecylbenzene sulfonic acid; (C) an organic solvent such as propyleneglycol monomethyl ether; and (D) a light-absorbing compound which is preferably 9-anthra-cene carboxylic acid or 9,10-anthracene dicarboxylic acid.
摘要翻译： 公开了一种用于形成抗反射底涂层的新型底涂层溶液，以在半导体器件的制造过程中在衬底的表面和待图案化的光致抗蚀剂层之间进行介入，以防止在衬底处反射的光的不利影响 在图案化抗蚀剂层的横截面轮廓上的表面。 底涂层组合物是均匀溶液，其包含：（A）在分子中具有至少两个被至少一个选自羟烷基和烷氧基烷基的取代基取代的氨基的含氮有机化合物 例如N，N-取代的苯并胍胺化合物;（B）酸残基含有至少一个硫原子的有机酸或无机酸，例如甲磺酸和十二烷基苯磺酸;（C）有机溶剂 如丙二醇单甲醚; 和（D）优选9-蒽甲酸或9,10-蒽二羧酸的光吸收化合物。
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公开(公告)号：US06284428B1
公开(公告)日：2001-09-04
申请号：US09493098
申请日：2000-01-28
IPC分类号： G03F7004
CPC分类号： G03F7/091 , Y10S430/128
摘要： Disclosed is a novel undercoating solution for the formation of an antireflection undercoating layer to intervene between the surface of a substrate and a photoresist layer to be patterned in the manufacturing process of semiconductor devices with an object to prevent adverse influences of the light reflecting at the substrate surface on the cross sectional profile of the patterned resist layer. The undercoating composition is a uniform solution which comprises: (A) a nitrogen-containing organic compound having, in a molecule, at least two amino groups substituted by at least one substituent group selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups such as an N,N-substituted benzoguanamine compound; (B) an organic acid or an inorganic acid of which the acid residue contains at least one atom of sulfur such as methanesulfonic acid and dodecylbenzene sulfonic acid; and (C) an organic solvent such as propyleneglycol monomethyl ether. The undercoating solution further optionally contains a light-absorbing compound such as bis(4-hydroxyphenyl) sulfone and 9-hydroxymethyl anthracene.
摘要翻译： 公开了一种用于形成抗反射底涂层的新型底涂层溶液，以在半导体器件的制造过程中在衬底的表面和待图案化的光致抗蚀剂层之间进行介入，以防止在衬底处反射的光的不利影响 在图案化抗蚀剂层的横截面轮廓上的表面。 底涂层组合物是均匀溶液，其包含：（A）在分子中具有至少两个被至少一个选自羟基烷基和烷氧基烷基的取代基取代的氨基的含氮有机化合物，例如 N，N-取代的苯并胍胺化合物;（B）酸残基含有至少一个硫原子的有机酸或无机酸，例如甲磺酸和十二烷基苯磺酸; 和（C）有机溶剂如丙二醇单甲基醚。 底涂层溶液还任选地含有光吸收化合物如双（4-羟基苯基）砜和9-羟甲基蒽。
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4.发明授权Composition for forming antireflective coating film and method for forming resist pattern using same 失效用于形成抗反射涂膜的组合物和使用其形成抗蚀剂图案的方法公开(公告)号：US06268108B1
公开(公告)日：2001-07-31
申请号：US09116460
申请日：1998-07-16
IPC分类号： G03F7004
CPC分类号： G03F7/091
摘要： The present invention provides a composition for forming an antireflective coating film which is not liable to intermixing between the resist composition layer and the antireflective coating layer and a method for forming a resist pattern having an excellent dimensional accuracy and section shape. The composition consists of (A) a compound which produces an acid upon irradiation with actinic rays, (B) a compound which undergoes crosslinking reaction in the presence of an acid, (C) a dye and (D) an organic solvent. The method for forming a resist pattern comprises applying the composition for forming an antireflective coating film to a semiconductor substrate, drying the composition coated, irradiating the entire surface of the coated material with actinic rays so that it undergoes crosslinking reaction to form an antireflective coating film thereon, applying a resist composition to the antireflective coating film, drying the coated material, and then subjecting the coated material to lithographic processing to form a resist pattern thereon.
摘要翻译： 本发明提供了一种用于形成不易于在抗蚀剂组合物层和抗反射涂层之间混合的抗反射涂膜的组合物和形成具有优异的尺寸精度和截面形状的抗蚀剂图案的方法。 组合物由（A）在光化射线照射时产生酸的化合物，（B）在酸存在下进行交联反应的化合物，（C）染料和（D）有机溶剂。 形成抗蚀剂图案的方法包括将用于形成抗反射涂膜的组合物施加到半导体衬底上，干燥涂覆的组合物，用光化射线照射涂覆材料的整个表面，使其经历交联反应以形成抗反射涂膜 在其上涂布抗蚀剂组合物到抗反射涂膜上，干燥涂覆的材料，然后对涂覆材料进行光刻处理以在其上形成抗蚀剂图案。
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公开(公告)号：US06319815B1
公开(公告)日：2001-11-20
申请号：US09419951
申请日：1999-10-18
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/76801
摘要： A method for forming a wiring structure on a semiconductor substrate, comprising the following steps: a step for forming a low dielectric constant dielectric film and an etching stopper, sequentially, on said semiconductor substrate; a step for forming a resist mask having a pattern for forming via-holes on the etching stopper film; a step for forming via-holes on the low dielectric constant dielectric film through said resist mask; a step for filling said via-holes with an embedding material and for heating the embedding material to harden; a step for maintaining the embedding material at a predetermined thickness on the bottoms of the via-holes by performing etching back on the embedding material being heated to be harden; a step for forming a resist mask having a pattern for forming trench holes on said etching stopper film; a step for forming the trench holes on said low dielectric film constant dielectric through said resist mask, while removing the embedding material remaining on the bottoms of said via-holes; and a step for embedding metal into said trench holes and said via-holes, wherein the embedding material mainly includes a thermo-bridge forming compound therein, thereby generating no bubbles even when said embedding material is being filled into gutters having a large aspect ratio thereof.
摘要翻译： 一种在半导体衬底上形成布线结构的方法，包括以下步骤：在所述半导体衬底上依次形成低介电常数介电膜和蚀刻阻挡层的步骤; 用于形成具有用于在蚀刻停止膜上形成通孔的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低介电常数介电膜上形成通孔的步骤; 用嵌入材料填充所述通孔并加热所述嵌入材料以硬化的步骤; 通过对被加热的硬化的嵌入材料进行蚀刻，将通孔的底部的嵌入材料保持在预定厚度的步骤; 在所述蚀刻阻挡膜上形成具有用于形成沟槽的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低电介质膜恒定电介质上形成沟槽的步骤，同时去除残留在所述通孔的底部上的包埋材料; 以及将金属嵌入所述沟槽和所述通孔的步骤，其中所述嵌入材料主要包括其中的热电桥形成化合物，即使当所述嵌入材料被填充到具有大纵横比的沟槽中时也不产生气泡 。
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公开(公告)号：US5948847A
公开(公告)日：1999-09-07
申请号：US985359
申请日：1997-12-04
申请人： Etsuko Iguchi , Mitsuru Sato
发明人： Etsuko Iguchi , Mitsuru Sato
CPC分类号： G03F7/091
摘要： An undercoating composition layer to intervene between the surface of a substrate, e.g., a silicon wafer, and a photoresist layer to prevent noxious reflection of exposure light on the substrate surface in the photolithographic patterning work for the manufacture of semiconductor devices comprising: (A) a nitrogen-containing organic compound, as a crosslinking agent, having, in a molecule, at least two amino groups each substituted by at least one substituent selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups; and (B) a homopolymer of or a copolymer of a mixture of monomers of which one is a (meth)acrylic acid ester of an aromatic hydroxyl compound selected from the group consisting of bisphenylsulfone compounds having at least one hydroxyl group in a molecule and benzophenone compounds having at least one hydroxyl group in a molecule in a specified proportion.
摘要翻译： 在用于制造半导体器件的光刻图案化工作中，在衬底表面（例如，硅晶片）和光致抗蚀剂层之间插入底涂层组合物层以防止曝光在衬底表面上的有害反射，包括：（A） 作为交联剂的含氮有机化合物在分子中具有至少两个氨基，各自被至少一个选自羟基烷基和烷氧基烷基的取代基取代; 和（B）其中单体的混合物的均聚物或共聚物，其中一种是选自分子中具有至少一个羟基的双苯基砜化合物的一种芳族羟基化合物的（甲基）丙烯酸酯和二苯甲酮 在分子中具有至少一个羟基的化合物以特定比例的化合物。
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公开(公告)号：US5908738A
公开(公告)日：1999-06-01
申请号：US18910
申请日：1998-02-05
CPC分类号： G03F7/091 , Y10S430/117 , Y10S430/124
摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.
摘要翻译： 提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。 本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c） （甲基）丙烯酸酯的不溶性树脂。
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8.发明授权Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound 失效包含两种具有不同的酸可分解基团的聚羟基苯乙烯和产酸化合物的混合物的正性抗蚀剂组合物
公开(公告)号：US5736296A
公开(公告)日：1998-04-07
申请号：US625931
申请日：1996-04-01
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms; and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译： 公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。 该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B） 酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代 式（I）：其中R 1表示氢原子或甲基，R 2表示甲基或乙基，R 3表示碳原子数1〜4的低级烷基。 和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。 该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于 底物。 该组合物可用于在制造超LSI时形成精细图案。
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公开(公告)号：US5939510A
公开(公告)日：1999-08-17
申请号：US845358
申请日：1997-04-24
CPC分类号： G03F7/091
摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photoresist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.
摘要翻译： 提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，目的在于降低光致抗蚀剂层的图案曝光中光的反射对基板表面的不利影响 在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，没有不希望的层之间的混合现象和开槽以及大的选择比。 底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有 至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。
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公开(公告)号：US5925495A
公开(公告)日：1999-07-20
申请号：US924260
申请日：1997-09-05
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03C1/492
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photoresist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition comprising an oxime sulfonate acid generating agent. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基底的光致抗蚀剂层压件上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 以及（c）由抗反酸涂层形成的抗氧化剂层，其特征在于包含肟磺酸生成剂的特定负性化学增感光致抗蚀剂组合物。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。
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