公开(公告)号：US20060094243A1

公开(公告)日：2006-05-04

申请号：US11298785

申请日：2005-12-09

申请人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Kim

发明人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Kim

IPC分类号： H01L21/311

CPC分类号： H01L21/76837 ,  C08L83/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76232 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/823475 ,  H01L21/823481

摘要： Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

公开(公告)号：US07429637B2

公开(公告)日：2008-09-30

申请号：US11298785

申请日：2005-12-09

申请人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

发明人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

IPC分类号： C08G77/12

CPC分类号： H01L21/76837 ,  C08L83/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76232 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/823475 ,  H01L21/823481

摘要： Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

摘要翻译： 可用于半导体制造方法的组合物包括重均分子量为约300至约3,000，多分散指数为约1.8至约3.0的全氢化硅氮烷。 还提供了包含本发明组合物的方法，半导体制造工艺中形成膜的方法以及制造半导体器件的方法。

公开(公告)号：US07015144B2

公开(公告)日：2006-03-21

申请号：US10776823

申请日：2004-02-11

申请人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

发明人： Eunkee Hong ,  Kyutae Na ,  Juseon Goo ,  Hong Gun Kim

IPC分类号： H01L21/311 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76837 ,  C08L83/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76232 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/823475 ,  H01L21/823481

摘要： Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

摘要翻译： 可用于半导体制造方法的组合物包括重均分子量为约300至约3,000，多分散指数为约1.8至约3.0的全氢化硅氮烷。 还提供了包含本发明组合物的方法，半导体制造工艺中形成膜的方法以及制造半导体器件的方法。

公开(公告)号：US5750457A

公开(公告)日：1998-05-12

申请号：US509299

申请日：1995-07-31

申请人： Kyutae Na ,  Toshio Okuhara ,  Makoto Misono

发明人： Kyutae Na ,  Toshio Okuhara ,  Makoto Misono

IPC分类号： B01J27/185 ,  B01J27/188 ,  C10G45/62 ,  C07D401/00 ,  C01B25/00 ,  C07C5/13

CPC分类号： B01J27/1856 ,  B01J27/188 ,  C10G45/62

摘要： A solid acid catalyst for paraffin conversion which consists of an acid salt of a heteropoly acid being represented by the following general formula: A.sub.x H.sub.(3-x) PY.sub.12 O.sub.40 wherein A represents one ion selected from the group consisting of alkali metal ion and ammonium ion; Y represents at least one atom selected from the group consisting of W and Mo; x represents a number of 2.2 to 2.8, and a metal Group VIII, wherein the acid salt of heteroply acid has been impregnated in the metal of Group VIII, and paraffin conversion process using the same.

摘要翻译： 由以下通式表示的杂多酸的酸盐组成的用于石蜡转化的固体酸催化剂：AxH（3-x）PY12O40其中A表示选自碱金属离子和铵离子的一种离子; Y表示选自W和Mo中的至少一个原子; x表示2.2〜2.8的数值，其中异丙酸的酸盐浸渍在VIII族的金属中的金属VIII族和使用其的石蜡转化法。