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    OLIGOMERIC COMPOUNDS WHICH FORM A SEMICONDUCTOR LAYER
    2.
    发明申请
    OLIGOMERIC COMPOUNDS WHICH FORM A SEMICONDUCTOR LAYER 审中-公开
    形成半导体层的低分子化合物

    公开(公告)号：US20090283723A1

    公开(公告)日：2009-11-19

    申请号：US12441153

    申请日：2007-09-11

    申请人： Timo Meyer-Friedrichsen ,  Stephan Kirchmeyer ,  Andreas Elschner ,  Sergei Anatolievich Ponomarenko

    发明人： Timo Meyer-Friedrichsen ,  Stephan Kirchmeyer ,  Andreas Elschner ,  Sergei Anatolievich Ponomarenko

    IPC分类号： H01B1/12 ,  C07D333/06

    CPC分类号： C08G61/00 ,  C08G61/126 ,  C08L65/00 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0545 ,  Y02E10/549

    摘要： Oligomeric compounds of the general formula (M), mixtures thereof and electronic components containing the same: wherein L represents a linear conjugated oligomeric chain; wherein each RA and each RB independently represents a moiety selected from the group consisting of linear or branched C2-C20-alkylene radicals, C3-C8-cycloalkylene radicals, mono- or polyunsaturated C2-C20-alkenylene radicals, C2-C20-oxyalkylene radicals, C2-C20-aralkylene radicals or C2-C20-oligo- or C2-C20-polyether radicals; wherein XA and XB each independently represents a moiety selected from optionally substituted vinyl groups, chlorine, iodine, hydroxyl, alkoxy groups having 1 to 3 carbon atoms, alkoxysilyl groups, silyl groups, chlorosilyl groups, siloxane groups, carboxyl groups, methyl or ethyl carbonate groups, aldehyde groups, methylcarbonyl groups, amino groups, amido groups, sulphone groups, sulphonic acid groups, halosulphonyl groups, sulphonate groups, phosphonic acid groups, phosphonate groups, trichloromethyl, tribromomethyl, cyanate groups, isocyanate groups, thiocyanate groups, isothiocyanate groups, cyano groups, nitro groups and H; wherein each Y independently represents a moiety selected from an optionally substituted alkoxysilylene group, silylene group, chlorosilylene group, methylene group, dichloromethylene group, dibromomethylene group, divalent siloxane group, disiloxane group, carboxyl group, carbonate group, amino group, amido group, sulphate group, phosphonate group, phosphate group, borate group, S and O; and wherein n represents an integer of 1 to 10.

    摘要翻译： 通式（M）的低聚化合物，其混合物和含有它们的电子组分：其中L代表线性共轭低聚链; 其中每个RA和每个RB独立地表示选自直链或支链C 2 -C 20 - 亚烷基，C 3 -C 8 - 亚环烷基，单或多不饱和C 2 -C 20亚烯基，C 2 -C 20 - 氧亚烷基 ，C 2 -C 20 - 亚芳基或C 2 -C 20 - 低聚或C 2 -C 20 - 聚醚基团; 其中XA和XB各自独立地表示选自任选取代的乙烯基，氯，碘，羟基，具有1至3个碳原子的烷氧基，烷氧基甲硅烷基，甲硅烷基，氯甲硅烷基，硅氧烷基，羧基，甲基或碳酸乙酯的部分 基团，醛基，甲基羰基，氨基，酰胺基，砜基，磺酸基，卤磺酰基，磺酸酯基，膦酸基，膦酸酯基，三氯甲基，三溴甲基，氰酸酯基，异氰酸酯基，硫氰酸酯基，异硫氰酸酯基， 氰基，硝基和H; 其中每个Y独立地表示选自任选取代的烷氧基亚芳基，亚甲硅烷基，氯亚甲硅基，亚甲基，二氯亚甲基，二溴亚甲基，二价硅氧烷基，二硅氧烷基，羧基，碳酸酯基，氨基，酰胺基，硫酸根 膦酸酯基，磷酸酯基，硼酸酯基，S和O; 并且其中n表示1至10的整数。

    SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES
    4.
    发明申请
    SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES 审中-公开

    公开(公告)号：US20130146858A1

    公开(公告)日：2013-06-13

    申请号：US13809946

    申请日：2011-07-19

    申请人： Timo Meyer-Friedrichsen ,  Knud Reuter ,  Andreas Elschner ,  Marcus Halik

    发明人： Timo Meyer-Friedrichsen ,  Knud Reuter ,  Andreas Elschner ,  Marcus Halik

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0074 ,  C07D495/04 ,  C07F9/655354 ,  H01L51/0002 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).