公开(公告)号：US20250031580A1

公开(公告)日：2025-01-23

申请号：US18776578

申请日：2024-07-18

Applicant: Everspin Technologies, Inc.

Inventor： Kerry Joseph NAGEL ,  SHIMON ,  Sanjeev AGGARWAL

IPC: H10N50/01 ,  H10N50/10

Abstract: A method of manufacturing a magnetoresistive device may comprise providing a magnetoresistive structure comprising a bottom electrode, a magnetoresistive stack, and a top electrode. The method may include removing at least a portion of the top electrode using a first etch, where the first etch is performed in the presence of a first gas mixture. Methods of manufacturing the magnetoresistive device may include removing at least a portion of the magnetoresistive stack and the bottom electrode using a second etch, wherein the second etch is performed in the presence of a second gas mixture. The first and second gas mixture may comprise a hydrocarbon including a carbon-carbon double bond or a carbon-carbon triple bond.

公开(公告)号：US20210249589A1

公开(公告)日：2021-08-12

申请号：US16783740

申请日：2020-02-06

Applicant: Everspin Technologies, Inc.

Inventor： Sumio IKEGAWA ,  Hamid ALMASI ,  SHIMON ,  Kerry NAGEL ,  Han Kyu LEE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

Abstract: A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.

公开(公告)号：US20210234090A1

公开(公告)日：2021-07-29

申请号：US16750264

申请日：2020-01-23

Applicant: Everspin Technologies, Inc.

Inventor： SHIMON

IPC: H01L43/06 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14 ,  G11C11/16

Abstract: The magnetoresistive stack or structure of a magnetoresistive device includes one or more electrodes or electrically conductive lines, a magnetically fixed region, a magnetically free region disposed between the electrodes or electrically conductive lines, and a dielectric layer disposed between the free and fixed regions. The magnetoresistive device may further include a spin-Hall (SH) material proximate to at least a portion of the free region, and one or more insertion layers comprising antiferromagnetic material.

公开(公告)号：US20200035909A1

公开(公告)日：2020-01-30

申请号：US16519741

申请日：2019-07-23

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN ,  SHIMON ,  Han-Jong CHIA

IPC: H01L43/04 ,  G11C11/16 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14

Abstract: Spin-Hall (SH) material is provided near free regions of magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SH material injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from SH material can be used to switch the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional regions or manufacturing steps may improve the switching efficiency and the thermal stability of magnetoresistive devices.

公开(公告)号：US20230053632A1

公开(公告)日：2023-02-23

申请号：US18045504

申请日：2022-10-11

Applicant: Everspin Technologies, Inc.

Inventor： Sanjeev AGGARWAL ,  SHIMON ,  Kerry Joseph NAGEL

IPC: H01L43/14 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06

Abstract: A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.

公开(公告)号：US20220209104A1

公开(公告)日：2022-06-30

申请号：US17134683

申请日：2020-12-28

Applicant: Everspin Technologies, Inc.

Inventor： Sanjeev AGGARWAL ,  SHIMON ,  Kerry Joseph NAGEL

IPC: H01L43/14 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06

Abstract: A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.