公开(公告)号：US20200235288A1

公开(公告)日：2020-07-23

申请号：US16744963

申请日：2020-01-16

Applicant: Everspin Technologies, Inc.

Inventor： Sumio IKEGAWA ,  Han Kyu LEE ,  Sanjeev AGGARWAL ,  Jijun SUN ,  Syed M. ALAM ,  Thomas ANDRE

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

公开(公告)号：US20240006011A1

公开(公告)日：2024-01-04

申请号：US18467996

申请日：2023-09-15

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. ALAM ,  Jason JANESKY ,  Han Kyu LEE ,  Hamid ALMASI ,  Pedro SANCHEZ ,  Cristian P. MASGRAS ,  Iftekhar RAHMAN ,  Sumio IKEGAWA ,  Sanjeev AGGARWAL ,  Dimitri HOUSSAMEDDINE ,  Frederick Charles NEUMEYER

IPC: G11C29/42 ,  G11C29/12 ,  G11C29/18 ,  G11C29/44

CPC classification number: G11C29/42 ,  G11C29/1201 ,  G11C2029/0407 ,  G11C29/4401 ,  G11C29/18

Abstract: The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.

公开(公告)号：US20220139488A1

公开(公告)日：2022-05-05

申请号：US17512392

申请日：2021-10-27

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. ALAM ,  Jason JANESKY ,  Han Kyu LEE ,  Hamid ALMASI ,  Pedro SANCHEZ ,  Cristian P. MASGRAS ,  Iftekhar RAHMAN ,  Sumio IKEGAWA ,  Sanjeev AGGARWAL ,  Dimitri HOUSSAMEDDINE ,  Frederick Charles NEUMEYER

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C29/18

Abstract: The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.

公开(公告)号：US20210249589A1

公开(公告)日：2021-08-12

申请号：US16783740

申请日：2020-02-06

Applicant: Everspin Technologies, Inc.

Inventor： Sumio IKEGAWA ,  Hamid ALMASI ,  SHIMON ,  Kerry NAGEL ,  Han Kyu LEE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

Abstract: A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.