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    Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
    1.
    发明申请
    Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition 有权
    薄膜体声波谐振器（FBAR）工艺采用单步谐振器层沉积

    公开(公告)号：US20060284706A1

    公开(公告)日：2006-12-21

    申请号：US11154854

    申请日：2005-06-16

    申请人： Eyal Ginsburg ,  Dora Etgar-Diamant ,  Li-Peng Wang

    发明人： Eyal Ginsburg ,  Dora Etgar-Diamant ,  Li-Peng Wang

    IPC分类号： H03H9/56

    CPC分类号： H03H3/02 ,  H03H9/172 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49151 ,  Y10T29/49156

    摘要： A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and etching the piezoelectric layer and the bottom electrode layer to expose one or more edges of the bottom electrode layer and the piezoelectric layer, treating some or all of the one or more edges to prevent electrical contact between the bottom electrode layer and a top electrode layer, and depositing and etching the top electrode layer. An apparatus comprising a resonator attached to a substrate and suspended over a cavity in the substrate, the resonator comprising a bottom electrode layer and a piezoelectric layer on the bottom electrode layer, both the bottom electrode layer and the piezoelectric layer having been deposited in a vacuum, and a top electrode layer on the piezoelectric layer, wherein one or more edges of the bottom electrode layer and the piezoelectric layer include features that prevent electrical contact between the bottom electrode layer and the top electrode layer.

    摘要翻译： 一种在真空中包括在衬底上的空腔上沉积底电极层和压电层的方法，所述空腔填充有牺牲材料，图案化和蚀刻压电层和底电极层以暴露一个或多个边缘 的底部电极层和压电层，处理一个或多个边缘的一些或全部以防止底部电极层和顶部电极层之间的电接触，以及沉积和蚀刻顶部电极层。 一种装置，包括附着到衬底并悬挂在衬底中的空腔上的谐振器，谐振器包括在底部电极层上的底部电极层和压电层，底部电极层和压电层已经沉积在真空中 和压电层上的上电极层，其中底电极层和压电层的一个或多个边缘包括防止底电极层和顶电极层之间的电接触的特征。

    Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
    2.
    发明授权
    Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition 有权
    薄膜体声波谐振器（FBAR）工艺采用单步谐振器层沉积

    公开(公告)号：US07299529B2

    公开(公告)日：2007-11-27

    申请号：US11154854

    申请日：2005-06-16

    申请人： Eyal Ginsburg ,  Dora Etgar-Diamant ,  Li-Peng Wang

    发明人： Eyal Ginsburg ,  Dora Etgar-Diamant ,  Li-Peng Wang

    IPC分类号： H04R17/00 ,  H03H9/00

    CPC分类号： H03H3/02 ,  H03H9/172 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49151 ,  Y10T29/49156

    摘要： A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and etching the piezoelectric layer and the bottom electrode layer to expose one or more edges of the bottom electrode layer and the piezoelectric layer, treating some or all of the one or more edges to prevent electrical contact between the bottom electrode layer and a top electrode layer, and depositing and etching the top electrode layer. An apparatus comprising a resonator attached to a substrate and suspended over a cavity in the substrate, the resonator comprising a bottom electrode layer and a piezoelectric layer on the bottom electrode layer, both the bottom electrode layer and the piezoelectric layer having been deposited in a vacuum, and a top electrode layer on the piezoelectric layer, wherein one or more edges of the bottom electrode layer and the piezoelectric layer include features that prevent electrical contact between the bottom electrode layer and the top electrode layer.

    摘要翻译： 一种在真空中包括在衬底上的空腔上沉积底电极层和压电层的方法，所述空腔填充有牺牲材料，图案化和蚀刻压电层和底电极层以暴露一个或多个边缘 的底部电极层和压电层，处理一个或多个边缘的一些或全部以防止底部电极层和顶部电极层之间的电接触，以及沉积和蚀刻顶部电极层。 一种装置，包括附着到衬底并悬挂在衬底中的空腔上的谐振器，谐振器包括在底部电极层上的底部电极层和压电层，底部电极层和压电层已经沉积在真空中 和压电层上的上电极层，其中底电极层和压电层的一个或多个边缘包括防止底电极层和顶电极层之间的电接触的特征。

    Tapered electrode in an acoustic resonator
    3.
    发明授权
    Tapered electrode in an acoustic resonator 失效
    锥形电极在声谐振器中

    公开(公告)号：US07109826B2

    公开(公告)日：2006-09-19

    申请号：US11153704

    申请日：2005-06-14

    申请人： Eyal Ginsburg ,  Li-Peng Wang ,  Alexander Talalyevsky ,  Eyal Bar-Sadeh ,  Doron Rubin

    发明人： Eyal Ginsburg ,  Li-Peng Wang ,  Alexander Talalyevsky ,  Eyal Bar-Sadeh ,  Doron Rubin

    IPC分类号： H03H9/00

    CPC分类号： H03H9/02133 ,  H03H9/132

    摘要： An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AlN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).

    摘要翻译： 一种在声谐振器中提供锥形电极的装置和方法。 在具有锥形端的底部电极上形成诸如氮化铝（AlN）的压电（PZ）层。 顶部电极位于PZ层上。 底部电极的锥形端在PZ材料的下层形成温和的形貌以防止PZ层中的开裂。 由于PZ晶粒是高度取向的，锥形端部也降低了声谐振器中的声学损耗。 在一个实施例中，声谐振器是膜体声波谐振器（FBAR）。

    Tapered electrode in an acoustic resonator
    4.
    发明授权
    Tapered electrode in an acoustic resonator 有权
    锥形电极在声谐振器中

    公开(公告)号：US06924717B2

    公开(公告)日：2005-08-02

    申请号：US10607764

    申请日：2003-06-30

    申请人： Eyal Ginsburg ,  Li-Peng Wang ,  Alexander Talalyevsky ,  Eyal Bar-Sadeh ,  Doron Rubin

    发明人： Eyal Ginsburg ,  Li-Peng Wang ,  Alexander Talalyevsky ,  Eyal Bar-Sadeh ,  Doron Rubin

    IPC分类号： H03H9/13 ,  H03H9/15 ,  H03H9/54

    CPC分类号： H03H9/02133 ,  H03H9/132

    摘要： An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AIN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).

    摘要翻译： 一种在声谐振器中提供锥形电极的装置和方法。 在具有锥形端的底部电极上形成诸如氮化铝（AlN）的压电（PZ）层。 顶部电极位于PZ层上。 底部电极的锥形端在PZ材料的下层形成温和的形貌以防止PZ层中的开裂。 由于PZ晶粒是高度取向的，锥形端部也降低了声谐振器中的声学损耗。 在一个实施例中，声谐振器是膜体声波谐振器（FBAR）。

    Manufacturing film bulk acoustic resonator filters
    5.
    发明申请
    Manufacturing film bulk acoustic resonator filters 审中-公开
    制造膜体声波谐振器滤波器

    公开(公告)号：US20060176126A1

    公开(公告)日：2006-08-10

    申请号：US11335920

    申请日：2006-01-19

    申请人： Li-Peng Wang ,  Eyal Bar-Sadeh ,  Valluri Rao ,  John Heck ,  Qing Ma ,  Quan Tran ,  Alexander Talalyevsky ,  Eyal Ginsburg

    发明人： Li-Peng Wang ,  Eyal Bar-Sadeh ,  Valluri Rao ,  John Heck ,  Qing Ma ,  Quan Tran ,  Alexander Talalyevsky ,  Eyal Ginsburg

    IPC分类号： H04R17/00

    CPC分类号： H03H9/564 ,  H03H3/02 ,  Y10T29/42

    摘要： A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

    摘要翻译： 薄膜体声波谐振器滤波器可以形成有形成在同一膜上的多个互连串联和分流膜体声波谐振器。 膜体积声谐振器中的每一个可以由限定为形成每个膜体声波谐振器的底部电极的公共下导电层形成。 可以限定共同的顶部导电层以形成每个膜体声波谐振器的每个顶部电极。 可以或可以不被图案化的公共压电膜层形成连续或不连续的膜。

    Tapered electrode in an acoustic resonator
    6.
    发明申请
    Tapered electrode in an acoustic resonator 失效
    锥形电极在声谐振器中

    公开(公告)号：US20050231305A1

    公开(公告)日：2005-10-20

    申请号：US11153704

    申请日：2005-06-14

    申请人： Eyal Ginsburg ,  Li-Peng Wang ,  Alexander Talalyevsky ,  Eyal Bar-Sadeh ,  Doron Rubin

    发明人： Eyal Ginsburg ,  Li-Peng Wang ,  Alexander Talalyevsky ,  Eyal Bar-Sadeh ,  Doron Rubin

    IPC分类号： H03H9/13 ,  H03H9/54

    CPC分类号： H03H9/02133 ,  H03H9/132

    摘要： An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AlN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).

    摘要翻译： 一种在声谐振器中提供锥形电极的装置和方法。 在具有锥形端的底部电极上形成诸如氮化铝（AlN）的压电（PZ）层。 顶部电极位于PZ层上。 底部电极的锥形端在PZ材料的下层形成温和的形貌以防止PZ层中的开裂。 由于PZ晶粒是高度取向的，锥形端部也降低了声谐振器中的声学损耗。 在一个实施例中，声谐振器是膜体声波谐振器（FBAR）。