公开(公告)号：US09123506B2

公开(公告)日：2015-09-01

申请号：US13914312

申请日：2013-06-10

申请人： FEI Company

发明人： Aiden Martin ,  Milos Toth

IPC分类号： H01J37/305 ,  C23F4/02 ,  H01L21/3065 ,  H01J37/30

CPC分类号： H01J37/3053 ,  C23F4/02 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/2001 ,  H01J2237/24445 ,  H01J2237/2608 ,  H01J2237/31732 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L21/465

摘要： Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

摘要翻译： 光束蚀刻使用保持在接近于前体材料的沸点的温度的工件，但温度足够高以解吸反应副产物。 在一个实施方案中，NF3用作在低于室温的温度下用于电子束诱导的硅蚀刻的前体气体。

公开(公告)号：US20140363978A1

公开(公告)日：2014-12-11

申请号：US13914312

申请日：2013-06-10

申请人： FEI Company

发明人： Aiden Martin ,  Milos Toth

IPC分类号： H01J37/305 ,  C23F4/02 ,  H01L21/3065

CPC分类号： H01J37/3053 ,  C23F4/02 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/2001 ,  H01J2237/24445 ,  H01J2237/2608 ,  H01J2237/31732 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L21/465

摘要： Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

摘要翻译： 光束蚀刻使用保持在接近于前体材料的沸点的温度的工件，但温度足够高以解吸反应副产物。 在一个实施方案中，NF3用作在低于室温的温度下用于电子束诱导的硅蚀刻的前体气体。

公开(公告)号：US10304658B2

公开(公告)日：2019-05-28

申请号：US14802648

申请日：2015-07-17

申请人： FEI Company

发明人： Aiden Martin ,  Milos Toth

IPC分类号： H01J37/305 ,  H01L21/3065 ,  H01L21/465 ,  C23F4/02 ,  H01J37/30

摘要： Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

公开(公告)号：US20160020068A1

公开(公告)日：2016-01-21

申请号：US14802648

申请日：2015-07-17

申请人： FEI Company

发明人： Aiden Martin ,  Milos Toth

IPC分类号： H01J37/305 ,  H01L21/465 ,  H01L21/3065

CPC分类号： H01J37/3053 ,  C23F4/02 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/2001 ,  H01J2237/24445 ,  H01J2237/2608 ,  H01J2237/31732 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L21/465

摘要： Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

摘要翻译： 光束蚀刻使用保持在接近于前体材料的沸点的温度的工件，但温度足够高以解吸反应副产物。 在一个实施方案中，NF3用作在低于室温的温度下用于电子束诱导的硅蚀刻的前体气体。

公开(公告)号：US09799490B2

公开(公告)日：2017-10-24

申请号：US14674558

申请日：2015-03-31

申请人： FEI Company

发明人： Aiden Martin ,  Geoff McCredie ,  Milos Toth

IPC分类号： A61N5/00 ,  H01J37/32 ,  H01J37/18 ,  H01J37/305 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/32 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/2003 ,  H01J2237/24445 ,  H01J2237/30472 ,  H01J2237/317

摘要： A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.

公开(公告)号：US20160293380A1

公开(公告)日：2016-10-06

申请号：US14674558

申请日：2015-03-31

申请人： FEI Company

发明人： Aiden Martin ,  Geoff McCredie ,  Milos Toth

IPC分类号： H01J37/32 ,  H01J37/30

CPC分类号： H01J37/32 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/2003 ,  H01J2237/24445 ,  H01J2237/30472 ,  H01J2237/317

摘要： A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.

摘要翻译： 提供冷阱以减少在使用工艺气体的操作期间与梁发生反应的污染气体。 冷阱设置为冷凝污染气体但不会使工艺气体冷凝的温度。 冷阱可用于样品室和气体管线中。