MULTI-SOURCE GIS FOR PARTICLE-OPTICAL APPARATUS
    3.
    发明申请
    MULTI-SOURCE GIS FOR PARTICLE-OPTICAL APPARATUS 审中-公开
    用于颗粒光学设备的多源GIS

    公开(公告)号:US20160244871A1

    公开(公告)日:2016-08-25

    申请号:US15052716

    申请日:2016-02-24

    Applicant: FEI Company

    Abstract: A Gas Injection System (GIS) applies at least two fluids in the vacuum chamber of a particle-optical apparatus, the gas injection system having two or more channels. Each channel is connected to an associated reservoir holding a fluid at a first side and having an associated exit opening at the other side, the exit sides individually exiting to the outside of the GIS via a nozzle with a nozzle opening. At least two exit openings separated by less than the diameter of the channels near the exit openings, preferably concentric to each other.

    Abstract translation: 气体注入系统(GIS)在颗粒光学装置的真空室中应用至少两种流体,气体注入系统具有两个或更多个通道。 每个通道连接到在第一侧保持流体并且在另一侧具有相关联的出口的相关储存器,出口侧通过具有喷嘴开口的喷嘴单独地离开GIS的外部。 至少两个出口开口分开,小于靠近出口开口的通道的直径,优选彼此同心。

    Low energy ion milling or deposition
    6.
    发明授权
    Low energy ion milling or deposition 有权
    低能离子研磨或沉积

    公开(公告)号:US09206504B2

    公开(公告)日:2015-12-08

    申请号:US14243583

    申请日:2014-04-02

    Applicant: FEI Company

    Abstract: Samples to be imaged in a Transmission Electron Microscope must be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column, a Focused Ion Beam (FIB) column, and one or more Gas Injection Systems (GISses). A problem that occurs is that a large part of the lamella becomes amorphous due to bombardment by ions, and that ions get implanted in the sample. The invention provides a solution by applying a voltage difference between the capillary of the GIS and the sample, and directing a beam of ions or electrons to the jet of gas. The beam ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous.

    Abstract translation: 在透射电子显微镜中成像的样品必须变薄以形成厚度为例如20nm的薄片。 这通常通过在装备有扫描电子显微镜(SEM)柱,聚焦离子束(FIB)柱和一个或多个气体注入系统(GISs))的带电粒子装置中用离子溅射来完成。 发生的一个问题是,由于离子的轰击,大部分薄片变成无定形,并且离子被植入样品中。 本发明通过在GIS的毛细管和样品之间施加电压差并且将一束离子或电子引导到气体射流来提供解决方案。 光束电离加速到样品的气体,其中(当在样品和GIS之间使用低电压时)发生低能量铣削,因此样品厚度变得非晶态。

    Methods and Apparatuses for Specimen Lift-Out and Circuit Edit Using Needle Arrays
    7.
    发明申请
    Methods and Apparatuses for Specimen Lift-Out and Circuit Edit Using Needle Arrays 审中-公开
    使用针阵的样本提升和电路编辑的方法和设备

    公开(公告)号:US20140338076A1

    公开(公告)日:2014-11-13

    申请号:US14445392

    申请日:2014-07-29

    Abstract: Embodiments of the present invention provide apparatus of restoring probes attached to the manipulator in a control environment (e.g. vacuum chamber of an focus ion beam) without a need to open the vacuum chamber. Another embodiment of the present invention teaches construction and application of various shapes of nanoforks from a nanoneedles array inside a FIB vacuum chamber. In another embodiment, the present invention teaches edition and correction of completed and oxide-coated circuit boards by re-nano-wiring using nanoneedles of a nanoneedles array (as nanowire supply), contained in the same controlled space. In this embodiment, individual nanoneedles in a nanoneedle array are manipulated by a manipulator and placed in such a way to make electrical contact between the desired points.

    Abstract translation: 本发明的实施例提供了在控制环境(例如聚焦离子束的真空室)中恢复附接到操纵器的探针的装置,而不需要打开真空室。 本发明的另一个实施方案教导了在FIB真空室内的纳米针阵列中构造和应用各种形状的纳摩耳。 在另一个实施例中,本发明通过使用包含在相同受控空间中的纳米针阵列(作为纳米线供应)的纳米针通过再纳米布线来教导完成的和氧化物涂覆的电路板的编辑和校正。 在该实施例中,纳米针阵列中的单个纳米针由操纵器操纵并且以这样的方式放置以在期望的点之间进行电接触。

    Electron induced chemical etching and deposition for local circuit repair
    8.
    发明授权
    Electron induced chemical etching and deposition for local circuit repair 有权
    电子诱导化学蚀刻和沉积用于局部电路修复

    公开(公告)号:US08821682B2

    公开(公告)日:2014-09-02

    申请号:US12896549

    申请日:2010-10-01

    Abstract: Systems and methods of imaging and repairing defects on and below the surface of an integrated circuit (IC) are described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.

    Abstract translation: 描述了在集成电路(IC)的表面上和下方成像和修复缺陷的系统和方法。 该方法可以用于直径小至一微米的区域,并且可以去除小点中的最上面的材料,以各种层重复,直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体,流体或气态反应性材料(例如碳氟化合物的定向流)的添加层,并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 在暴露缺陷位置之后,该方法使用能量束来蚀刻不需要的材料,并且沉积各种适当的材料以填充间隙,并将IC恢复到操作状态。

    METHODS OF FORMING LAYERS
    9.
    发明申请

    公开(公告)号:US20130202809A1

    公开(公告)日:2013-08-08

    申请号:US13756672

    申请日:2013-02-01

    Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate.

    Beam-Induced Deposition of Low-Resistivity Material
    10.
    发明申请
    Beam-Induced Deposition of Low-Resistivity Material 审中-公开
    光诱导沉积低电阻材料

    公开(公告)号:US20120308740A1

    公开(公告)日:2012-12-06

    申请号:US13351088

    申请日:2012-01-16

    Abstract: An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μΩ·cm.

    Abstract translation: 一种改进的光束沉积方法来沉积低电阻率金属。 本发明的优选实施方案使用新颖的聚焦离子束诱导沉积前体来沉积诸如锡的低电阻率金属材料。 申请人已经发现,通过使用甲基化或乙基化金属如六甲基锡作为前体,可以沉积具有低至40μΩ·cm·cm的电阻率的材料。

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