Diagonal compound mill
    1.
    发明授权

    公开(公告)号:US11158487B2

    公开(公告)日:2021-10-26

    申请号:US16370023

    申请日:2019-03-29

    Applicant: FEI Company

    Abstract: Ion beams are directed to a substrate surface to expose a tapered, tilted surface in the substrate. The ion beams and the substrate are situated so that a first ion beam is incident along a first axis at a glancing angle, and a second ion beam is incident along a second axis in a plane defined by the glancing angle and at an angle with respect to the first axis. Exposure to the second ion beam tends to produced superior quality in the exposed surface such as by reducing curtain artifacts.

    DIAGONAL COMPOUND MILL
    3.
    发明申请

    公开(公告)号:US20200312618A1

    公开(公告)日:2020-10-01

    申请号:US16370023

    申请日:2019-03-29

    Applicant: FEI Company

    Abstract: Ion beams are directed to a substrate surface to expose a tapered, tilted surface in the substrate. The ion beams and the substrate are situated so that a first ion beam is incident along a first axis at a glancing angle, and a second ion beam is incident along a second axis in a plane defined by the glancing angle and at an angle with respect to the first axis. Exposure to the second ion beam tends to produced superior quality in the exposed surface such as by reducing curtain artifacts.

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