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    MITIGATING PHOTOVOLTAIC MODULE STRESS DAMAGE THROUGH CELL ISOLATION
    4.
    发明申请
    MITIGATING PHOTOVOLTAIC MODULE STRESS DAMAGE THROUGH CELL ISOLATION 审中-公开
    通过细胞分离降低光伏模块的应力损伤

    公开(公告)号：US20130186453A1

    公开(公告)日：2013-07-25

    申请号：US13713757

    申请日：2012-12-13

    Applicant: FIRST SOLAR, INC

    Inventor： Zhibo Zhao ,  David Hwang ,  Dmitriy Marinskiy ,  Zhengjue Zhang ,  Chungho Lee ,  Muhammad Khatri ,  Benyamin Buller

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: H01L31/042 ,  H01L31/0463 ,  Y02E10/50

    Abstract: Described herein is a photovoltaic module and method of manufacturing a photovoltaic module to isolate potentially stress-damaged portions of cells from non-stress-damaged portions thereof. The module has a plurality of columnar photovoltaic cells, and at least one isolation scribe at a first edge of an active area of the photovoltaic module and extending across a photovoltaic cell in a direction perpendicular to a length of the columnar cells, where the at least one isolation scribe is deep enough to electrically isolate portions of the photovoltaic cell on opposite sides of the at least one isolation scribe.

    Abstract translation: 这里描述的光伏组件和制造光伏组件的方法，以将潜在的应力损坏部分的细胞与非应力损坏的部分隔离开来。 所述模块具有多个柱状光伏电池，以及至少一个隔离划分在所述光伏模块的有源区域的第一边缘处，并且沿垂直于所述柱状电池长度的方向延伸穿过光伏电池，其中至少 一个隔离划分件足够深以电隔离至少一个隔离划片的相对侧上的光伏电池的部分。

    PHOTOVOLTAIC DEVICES AND METHODS OF MAKING
    8.
    发明公开
    PHOTOVOLTAIC DEVICES AND METHODS OF MAKING 审中-公开

    公开(公告)号：US20240015992A1

    公开(公告)日：2024-01-11

    申请号：US18039820

    申请日：2021-12-01

    Applicant: First Solar, Inc.

    Inventor： Duyen Cao ,  Markus Gloeckler ,  Sachit Grover ,  James Hack ,  Chungho Lee ,  Dingyuan Lu ,  Aravamuthan Varadarajan ,  Gang Xiong ,  Zhibo Zhao

    IPC: H10K30/10 ,  H10K71/12

    CPC classification number: H10K30/10 ,  H10K71/12

    Abstract: Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.

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