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公开(公告)号：US12078663B2
公开(公告)日：2024-09-03
申请号：US17890251
申请日：2022-08-17
发明人： Masashi Akahane
IPC分类号： G01R19/165 , H03K17/082
CPC分类号： G01R19/16571 , G01R19/16576 , H03K17/082
摘要： Provided is an overcurrent detection circuit for detecting an overcurrent flowing upon turning on of a switching element, the overcurrent detection circuit including a main current detection unit configured to detect whether an input signal according to a main current is higher than or equal to a set detection threshold, and a condition control unit configured to control at least one of a waveform of the input signal in the main current detection unit or the detection threshold to control a comparison condition in the main current detection unit, in which the condition control unit is configured to set the comparison condition to a first condition during a period from the turning on of the switching element until elapse of a first period, and set the comparison condition to a second condition during a period from the elapse of the first period until elapse of a second period.
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公开(公告)号：US10305365B2
公开(公告)日：2019-05-28
申请号：US16018802
申请日：2018-06-26
发明人： Masashi Akahane
IPC分类号： H02M1/08 , H02M1/32 , H02M7/5387 , H02M7/538 , H02M1/00
摘要： A power module including first and second switching elements connected in a half-bridge configuration, an integrated circuit including high-side and low-side circuits that respectively drive the first and second switching elements, high-side and low-side programmable circuits that are respectively configured to implement first and second logic functions or parameters to be used by the high-side and low-side circuits. The integrated circuit includes a write port that receives data to be written to the high-side and low-side programmable circuits, internal wiring that connects the high-side and low-side programmable circuits in a daisy chain configuration, and a level shifter that is provided in the internal wiring connecting the low-side programmable circuit to the high-side programmable circuit, and that connects a low-side signal system and a high-side signal system.
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公开(公告)号：US10281941B2
公开(公告)日：2019-05-07
申请号：US15830830
申请日：2017-12-04
发明人： Takahiro Mori , Masashi Akahane
摘要： A voltage generating circuit includes a first resistance voltage dividing circuit, configured by low temperature coefficient resistors being connected in series, that generates a reference voltage by resistance-dividing a predetermined power supply voltage, one or a multiple of a second resistance voltage dividing circuit, configured by a resistor having a positive or negative resistance temperature coefficient and the low temperature coefficient resistor being connected in series, that generates a temperature-dependent divided voltage by resistance-dividing the power supply voltage, and an instrumentation amplifier that generates the comparison reference voltage in accordance with a difference between the reference voltage and the divided voltage. The voltage generating circuit includes a comparator that, when a divided voltage exceeds a predetermined voltage threshold in accompaniment to a temperature rise, changes the divided voltage generated by the second resistance voltage dividing circuit and applied to the instrumentation amplifier, or changes a gain of the instrumentation amplifier.
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公开(公告)号：US09991797B2
公开(公告)日：2018-06-05
申请号：US15333516
申请日：2016-10-25
发明人： Masashi Akahane
摘要： A semiconductor element drive apparatus for driving first and second semiconductor elements connected to a half-bridge circuit at respectively an upper-level side and a lower-level side of the half-bridge circuit. The semiconductor element drive apparatus includes a high-side circuit and a low-side circuit for respectively driving the first and second semiconductor elements. The high-side circuit includes a voltage drop detection unit that detects an abnormal voltage drop of a voltage of a main power supply, a pulse generation circuit that generates a pulse signal, a frequency of which is decreased in response to the abnormal voltage drop detected by the voltage drop detection unit, and a level-down circuit that receives the pulse signal from the pulse generation circuit, generates an abnormality signal, and transmits the abnormality signal to the low-side circuit, to thereby notify the low-side circuit of the abnormal voltage drop in the high-side circuit.
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公开(公告)号：US20180088615A1
公开(公告)日：2018-03-29
申请号：US15830830
申请日：2017-12-04
发明人： Takahiro Mori , Masashi Akahane
CPC分类号： G05F1/575 , H02M1/00 , H03K17/60 , H03K2217/0063 , H03K2217/0072
摘要： A voltage generating circuit includes a first resistance voltage dividing circuit, configured by low temperature coefficient resistors being connected in series, that generates a reference voltage by resistance-dividing a predetermined power supply voltage, one or a multiple of a second resistance voltage dividing circuit, configured by a resistor having a positive or negative resistance temperature coefficient and the low temperature coefficient resistor being connected in series, that generates a temperature-dependent divided voltage by resistance-dividing the power supply voltage, and an instrumentation amplifier that generates the comparison reference voltage in accordance with a difference between the reference voltage and the divided voltage. The voltage generating circuit includes a comparator that, when a divided voltage exceeds a predetermined voltage threshold in accompaniment to a temperature rise, changes the divided voltage generated by the second resistance voltage dividing circuit and applied to the instrumentation amplifier, or changes a gain of the instrumentation amplifier.
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公开(公告)号：US09685859B2
公开(公告)日：2017-06-20
申请号：US14789565
申请日：2015-07-01
发明人： Masashi Akahane
CPC分类号： H02M3/156 , H02M1/08 , H02M1/32 , H02M3/158 , H03K17/18 , H03K19/018521 , H03K2217/0063 , H03K2217/0072
摘要： A signal transmission circuit with a first circuit in a signal transmission side having first and second semiconductor switch elements transmitting a reference potential or power supply voltage of the first circuit to a second circuit by being alternatively driven on and off according to a multiple of signals. The second circuit in a signal reception side having a voltage conversion circuit, including an in-phase noise filter that eliminates in-phase noise superimposed on the voltage transmitted via the first and second semiconductor switch elements, generating first and second pulse signals in accordance with the transmitted voltage, a latch circuit latching each of the first and second pulse signals with the first and second pulse signals as a clock, and a signal analysis circuit analyzing the first and second pulse signals latched by the latch circuit, and generating an output signal according to the category of the multiple of signals.
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7.发明授权公开(公告)号：US08933714B2
公开(公告)日：2015-01-13
申请号：US13861488
申请日：2013-04-12
发明人： Masashi Akahane
CPC分类号： H03K17/56 , G01R27/02 , H03K17/04123 , H03K17/145 , H03K17/162 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081
摘要： A level shift circuit in which no adverse effect is produced on a delay time, regardless of the resistance values of resistors. The level shift circuit includes an operation detection circuit that outputs a nseten signal and a nresen signal in response to a state of output from first and second series circuits, a latch malfunction protection circuit connected to the operation detection circuit, a latch circuit connected through first to sixth resistors to first and second level shift output terminals of the first and second series circuits, first and second parasitic resistors, and third and fourth switching elements connected in parallel therewith, and fifth and sixth switching elements connected to a power source potential, a connection point of the first and second resistors or a connection point of the third and fourth resistors, and the operation detection circuit.
摘要翻译： 不考虑电阻器的电阻值的电平移位电路，其在延迟时间上不产生不利影响。 电平移位电路包括响应于来自第一和第二串联电路的输出状态而输出nseten信号和nresen信号的操作检测电路，连接到操作检测电路的闩锁故障保护电路，通过第一连接的锁存电路 到第一和第二串联电路的第一和第二电平移位输出端的第六电阻器，第一和第二寄生电阻器以及并联连接的第三和第四开关元件，以及连接到电源电位的第五和第六开关元件， 第一和第二电阻器的连接点或第三和第四电阻器的连接点以及操作检测电路。
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公开(公告)号：US10809285B2
公开(公告)日：2020-10-20
申请号：US16170486
申请日：2018-10-25
发明人： Masashi Akahane
IPC分类号： G01R19/165 , H02M1/08 , H02H1/00 , H03K17/082 , H02M1/32 , H02M1/00
摘要： A current detection circuit includes: a current detection unit configured to detect a potential difference between both ends of a first current detection resistor interposed between a control terminal and a drive circuit of a voltage-controlled semiconductor element including a current detection terminal; a voltage detection unit configured to detect a voltage at one of the both ends of the first current detection resistor; a voltage determination unit configured to determine whether or not a detection voltage of the voltage detection unit is not less than a threshold voltage; a voltage level adjustment unit configured to adjust a voltage level of a current detection voltage of the current detection terminal by a logical product signal of a current detection signal and a voltage determination signal; and an overcurrent detection unit configured to output an overcurrent detection signal when the adjusted current detection voltage is not less than a threshold voltage.
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公开(公告)号：US10700590B2
公开(公告)日：2020-06-30
申请号：US16429066
申请日：2019-06-03
发明人： Masashi Akahane
IPC分类号： H03K3/00 , H02M1/088 , H02M3/158 , H03K17/687 , H03K19/0175 , H03K17/06 , H02M1/08 , H02M1/00 , H02M7/538
摘要： A drive device includes: a gate driving unit that has gate driving circuits each driving gates of switching elements connected to each other in series; a negative-side power source that supplies a negative potential to the gate driving unit, where the negative potential steps down a reference potential that is a potential on a low side of the switching element; a negative-side capacitor for supplying a negative potential to the gate driving unit, where the negative potential steps down a reference potential that is a potential on a high side of the switching element; a timing detecting circuit that detects charging timing at which the negative-side capacitor is to be charged based on a potential state of the gate driving circuit on a high side; and a charging circuit that charges the negative-side capacitor by using the negative-side power source at the charging timing.
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公开(公告)号：US10193542B2
公开(公告)日：2019-01-29
申请号：US15891188
申请日：2018-02-07
发明人： Masashi Akahane
摘要： A semiconductor device includes: a bootstrap capacitor charged via a diode when a low-side switching device is ON, a resulting charge voltage being applied to a high-side driver circuit when the low-side switching device is OFF; a supplementary bootstrap capacitor charged when the low-side switching device is OFF; a Zener diode that regulates a charge voltage of the supplementary bootstrap capacitor; and a control circuit that applies the charge voltage of the supplementary bootstrap capacitor to the high-side driver circuit via a switch circuit when the charge voltage of the bootstrap capacitor decreases to less than a prescribed voltage while a high-side switching device is ON.
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