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公开(公告)号：US20240363692A1
公开(公告)日：2024-10-31
申请号：US18626631
申请日：2024-04-04
发明人： Takeshi TAWARA , Shinsuke HARADA
IPC分类号： H01L29/16 , H01L29/167 , H01L29/78 , H01L29/872
CPC分类号： H01L29/1608 , H01L29/167 , H01L29/7806 , H01L29/7832 , H01L29/872
摘要： A semiconductor device, including: first to fourth semiconductor regions, the fourth semiconductor region containing a first-conductivity-type impurity having a higher concentration than the first semiconductor region; first and second trenches; a gate electrode provided in the first trench; a Schottky electrode formed at an inner wall of the second trench, and in contact with the fourth semiconductor region; and a first electrode embedded in the second trench and in contact with the Schottky electrode. The fourth semiconductor region includes: an SBD portion formed at a sidewall of the second trench and in contact with the Schottky electrode, and an upper JFET portion provided between a sidewall of the first trench and the SBD portion. A junction between surfaces of the Schottky electrode and the SBD portion forms an SBD. A carrier concentration of the SBD portion is lower than the concentration of the first-conductivity-type impurity in the upper JFET portion.
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公开(公告)号：US12132083B2
公开(公告)日：2024-10-29
申请号：US17706301
申请日：2022-03-28
发明人： Shingo Hayashi , Akimasa Kinoshita
IPC分类号： H01L29/16
CPC分类号： H01L29/1608
摘要： A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, a gate insulating film, gate electrodes, first electrodes, a second electrode, and a gate pad portion configured by a gate electrode pad and a connecting portion. The second semiconductor layer includes a first region facing the connecting portion and a second region facing a corner portion of the gate electrode pad, and the first and second regions are free of the second semiconductor regions. The oxide film is provided on surfaces of the second semiconductor regions and the first and second regions, and the oxide film and the gate insulating film are made of a same material.
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公开(公告)号：US20240356367A1
公开(公告)日：2024-10-24
申请号：US18396043
申请日：2023-12-26
发明人： Takahiro KINUTA , Seiitsu KIN
IPC分类号： H02J9/06
CPC分类号： H02J9/062
摘要： An uninterruptible power supply according to this invention includes an uninterruptible-power-supply module including a power conversion housing accommodating a power converter. The uninterruptible power supply includes a bus part arranged outside the power conversion housing of the uninterruptible-power-supply module, and configured to deliver input/output power from/to the uninterruptible-power-supply modules. Also, the uninterruptible power supply includes a module interrupter provided between the uninterruptible-power-supply module and the bus part and configured to electrically entirely disconnect the uninterruptible-power-supply module from the bus part. Also, the uninterruptible power supply includes a bypass circuit part including a switching circuit for switching electrical conduction, and configured to supply AC power from a bypass AC power supply to the load without connection through the uninterruptible-power-supply module.
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公开(公告)号：US12109958B2
公开(公告)日：2024-10-08
申请号：US17456577
申请日：2021-11-25
发明人： Mutsuo Nishikawa , Hirofumi Kato
CPC分类号： B60R16/03 , B60R16/0232 , G08B21/185 , H02H1/0007 , H02H3/202 , H02H7/10 , H02H3/18
摘要： Provided is a semiconductor circuit connected to a load circuit and configured to control power supply to the load circuit, comprising: a power line to which a power voltage is applied; an overvoltage protection unit that has an output unit configured to interrupt power supply from the power line to the load circuit when the power voltage in the power line is overvoltage; and a state notification unit configured to notify the outside of a state signal indicating whether the output unit is interrupting the power supply.
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公开(公告)号：US20240332363A1
公开(公告)日：2024-10-03
申请号：US18429602
申请日：2024-02-01
发明人： Naoyuki OHSE
IPC分类号： H01L29/16 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/78
CPC分类号： H01L29/1608 , H01L29/086 , H01L29/4236 , H01L29/66068 , H01L29/66734 , H01L29/7813
摘要： A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type; a base region of a second conductivity-type provided on a top surface side of the drift layer; a source contact region of the first conductivity-type including silicon carbide having a 3C-structure provided on a top surface side of the base region; a gate electrode buried inside a gate trench with a gate insulating film interposed; a main electrode buried inside a contact trench so as to be in contact with a side surface of the source contact region; and a base contact region of the second conductivity-type including silicon carbide having a 4H-structure so as to be in contact with a bottom surface of the contact trench, wherein the bottom surface of the contact trench is located at a position deeper than a bottom surface of the source contact region.
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公开(公告)号：US20240321675A1
公开(公告)日：2024-09-26
申请号：US18678778
申请日：2024-05-30
发明人： Satoshi KANEKO
IPC分类号： H01L23/373 , H01L23/00 , H01L23/047
CPC分类号： H01L23/3735 , H01L23/047 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/48225 , H01L2224/73265 , H01L2924/3512
摘要： A semiconductor device, including: an insulating board; a conductive plate that is provided on the insulating board; and a terminal that is bonded to the conductive plate via a bonding material. The conductive plate has a structure formed in a predetermined region adjacent to an end portion thereof, such that spreading of the bonding material to the end portion is suppressible by the structure.
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公开(公告)号：US12100631B2
公开(公告)日：2024-09-24
申请号：US17729831
申请日：2022-04-26
发明人： Taichi Itoh
IPC分类号： H01L23/31 , H01L23/053 , H01L25/18 , H01L23/00
CPC分类号： H01L23/053 , H01L25/18 , H01L23/3121 , H01L24/48 , H01L24/49 , H01L2224/48137 , H01L2224/48155 , H01L2224/48225 , H01L2224/49111 , H01L2224/49175 , H01L2924/12031 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091
摘要： A semiconductor device includes first and second conductive parts, a first bonding wire connecting the first and second conductive parts and having a non-flat portion between opposite ends thereof so that a portion between the opposite ends is away from the first and second conductive parts, a case having a housing space to accommodate the first and second conductive parts, including a sidewall having first to fourth lateral faces surrounding the housing space to form a rectangular shape in a plan view, and a cover disposed on the sidewall, a sealing member filling the case to seal the first bonding wire, and a first stress relaxer for relieving a stress in the first bonding wire. The first bonding wire extends from the second lateral face toward the fourth lateral face, and the first stress relaxer is positioned between the first bonding wire and the first lateral face.
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公开(公告)号：US20240313763A1
公开(公告)日：2024-09-19
申请号：US18423567
申请日：2024-01-26
发明人： Yuki KUMAZAWA
IPC分类号： H03K17/082 , H03K17/08 , H03K17/14
CPC分类号： H03K17/0828 , H03K17/14 , H03K2017/0806 , H03K2217/0027
摘要： A semiconductor device includes a switching element performing a switching base on an input signal to operate a load, a detection circuit outputting a release signal upon detecting a predetermined state of the switching element, and a driving current control circuit including a latch circuit that latches a detection result obtained from a magnitude of a current flowing through the switching element and to be reset upon receiving the release signal from the detection circuit. The control circuit outputs, based on an output of the latch circuit a first driving current or a second driving current larger than the first driving current. The driving current is used for charging a gate capacitance of the switching element in an operation state of the semiconductor device. The control circuit sets the driving current to the first driving current upon the latch circuit being reset by the release signal.
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公开(公告)号：US20240313089A1
公开(公告)日：2024-09-19
申请号：US18422787
申请日：2024-01-25
发明人： Ryo TANAKA , Katsunori UENO , Shinya TAKASHIMA
IPC分类号： H01L29/66 , H01L21/225 , H01L21/265 , H01L21/266 , H01L29/08 , H01L29/20 , H01L29/78
CPC分类号： H01L29/66522 , H01L21/2258 , H01L21/26546 , H01L21/266 , H01L29/086 , H01L29/2003 , H01L29/66712 , H01L29/7802
摘要： The nitride semiconductor device includes a field effect transistor formed in a gallium nitride layer. The field effect transistor includes: a gate insulator film formed on a side of a first principal face of the gallium nitride layer; a p type region being in contact with the gate insulator film; an n type region being in contact with the p type region in a direction parallel to an interface between the p type region and the gate insulator film; a first electrode being in contact with the n type region. The p type region includes a first region that is in contact with the gate insulator film and a second region that is in contact with the gate insulator film and lies in the first direction between the first region and the n type region. The second region has a higher concentration of p type impurities than the first region.
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公开(公告)号：US20240304677A1
公开(公告)日：2024-09-12
申请号：US18665569
申请日：2024-05-16
发明人： Motoyoshi KUBOUCHI
IPC分类号： H01L29/32 , H01L21/22 , H01L27/06 , H01L29/10 , H01L29/739 , H01L29/861
CPC分类号： H01L29/32 , H01L21/221 , H01L27/0664 , H01L29/1095 , H01L29/7397 , H01L29/8613
摘要： Provided is a semiconductor device including: a semiconductor substrate having upper and lower surfaces, provided with a drift region; trench portions reaching the drift region from the upper surface; and a mesa portion interposed between the trench portions. The mesa portion has: a base region between the drift region and the upper surface; a first region having a hydrogen chemical concentration peak at a first depth position; and an emitter region between the drift region and the upper surface and having a doping concentration higher than the base region. The semiconductor device further includes: an interlayer dielectric film covering the upper surface and having a contact hole to expose the upper surface; and a trench contact, below the contact hole, that passes through the emitter region from the upper surface. The first region overlaps the contact hole and locates deeper than a bottom surface of the trench contact.
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