公开(公告)号：US20230045851A1

公开(公告)日：2023-02-16

申请号：US17903158

申请日：2022-09-06

Applicant: FUJIFILM CORPORATION

Inventor： Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kyohei SAKITA ,  Akiyoshi GOTO ,  Kazunari YAGI ,  Mitsuhiro FUJITA

IPC: G03F7/039

Abstract: A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

公开(公告)号：US20190294042A1

公开(公告)日：2019-09-26

申请号：US16432043

申请日：2019-06-05

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Kyohei SAKITA ,  Daisuke ASAKAWA ,  Akiyoshi GOTO ,  Masafumi KOJIMA

IPC: G03F7/038 ,  G03F7/004

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition which satisfies a relational expression represented by a specific formula in a case where an exposure latitude is represented by EL and an normalized image log slope is represented by NILS, in which the actinic ray-sensitive or radiation-sensitive resin composition can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern (for example, a contact hole pattern having a hole diameter of 45 nm or less, or a line-and-space pattern having a line width of 45 nm or less); and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US20200012189A1

公开(公告)日：2020-01-09

申请号：US16507150

申请日：2019-07-10

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Masafumi KOJIMA ,  Akira TAKADA ,  Keita KATO ,  Kyohei SAKITA

IPC: G03F7/031 ,  G03F7/038

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by General Formula (1). In General Formula (1), X represents a sulfur atom or an iodine atom. m represents 1 or 2, in a case where X is a sulfur atom, m is 2, and in a case where X is an iodine atom, m is 1. R1's each independently represent an alkyl group or alkenyl group which may include a heteroatom, an aromatic heterocyclic group, or an aromatic hydrocarbon ring group. Further, in a case where m is 2, two R1's may be bonded to each other to form a ring. R2 represents a divalent linking group. R3 represents a divalent linking group having no aromatic group. Y− represents an anionic moiety. The pKa of the compound represented by General Formula (1) as Y− is protonated is −2.0 to 1.5.

公开(公告)号：US20210405530A1

公开(公告)日：2021-12-30

申请号：US17412772

申请日：2021-08-26

Applicant: FUJIFILM Corporation

Inventor： Kyohei SAKITA

IPC: G03F7/039 ,  G03F7/038 ,  C08F220/18 ,  C08F220/58 ,  C08F212/14 ,  C08F220/28

Abstract: A photosensitive composition for EUV light includes a resin X of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, and a photoacid generator; or a resin Y which includes a repeating unit having a photoacid generating group and of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, in which the photosensitive composition for EUV light satisfies both Requirement 1 and Requirement 2.

公开(公告)号：US20210173309A1

公开(公告)日：2021-06-10

申请号：US16761080

申请日：2018-09-03

Applicant: FUJIFILM Corporation

Inventor： Kyohei SAKITA

IPC: G03F7/40 ,  G03F7/004 ,  C08F220/28 ,  C08F212/14 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: A method of forming a reversed pattern including: a step of forming a resist film on a substrate using a photosensitive composition having an A value of 0.14 or more, which is determined by Expression (1); a step of exposing the resist film to light; a step of developing the exposed resist film to form a resist pattern; a step of applying a pattern reversal film forming composition such that the resist pattern is coated and thereby forming a pattern reversal film; a step of performing etch-back on the pattern reversal film and exposing a surface of the resist pattern to light; and a step of removing the resist pattern to form the reversed pattern, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×0.04+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Expression (1):