COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

    公开(公告)号:US20220283499A1

    公开(公告)日:2022-09-08

    申请号:US17748500

    申请日:2022-05-19

    Abstract: The present invention provides a composition for forming an underlayer film, with which an underlayer film having excellent surface flatness and solvent resistance can be formed. In addition, the present invention provides a resist pattern forming method and a manufacturing method of an electronic device, which are related to the composition for forming an underlayer film. The composition for forming an underlayer film according to the present invention is a composition for forming an underlayer film, which is used for forming an underlayer film under a resist film, including a monomer or a polymer containing an aromatic ring and a halogen-based organic solvent, in which a content of the halogen-based organic solvent is 0.001 to 50 ppm by mass with respect to a total mass of the composition for forming an underlayer film.

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