Abstract:
There is provided a pattern forming method through self-organization of a block copolymer, containing an annealing step after application of a self-organizing composition for forming pattern that contains a block copolymer containing a block having a repeating unit represented by the specific general formula, and contains an organic solvent, to a substrate, and wherein after a microphase-separated structure is formed in the annealing step, one domain thereof is selectively removed to form a pattern.
Abstract:
The present invention provides a composition for forming an underlayer film, with which an underlayer film having excellent surface flatness and solvent resistance can be formed. In addition, the present invention provides a resist pattern forming method and a manufacturing method of an electronic device, which are related to the composition for forming an underlayer film. The composition for forming an underlayer film according to the present invention is a composition for forming an underlayer film, which is used for forming an underlayer film under a resist film, including a monomer or a polymer containing an aromatic ring and a halogen-based organic solvent, in which a content of the halogen-based organic solvent is 0.001 to 50 ppm by mass with respect to a total mass of the composition for forming an underlayer film.
Abstract:
Provided are a laminate which is capable of forming an excellent organic semiconductor pattern, a kit for manufacturing an organic semiconductor, which is used to manufacture such a laminate, and a resist composition for manufacturing an organic semiconductor, which is used for the kit for manufacturing an organic semiconductor.The laminate includes an organic semiconductor film, a protective film on the organic semiconductor film, and a resist film on the protective film, in which the resist film is formed of a photosensitive resin composition that contains a photoacid generator (A) which generates an organic acid of which a pKa of the generated acid is −1 or less and a resin (B) which reacts with an acid generated by the photoacid generator so that the rate of dissolution in a developer containing an organic solvent is decreased.