公开(公告)号：US20200181453A1

公开(公告)日：2020-06-11

申请号：US16630605

申请日：2018-07-18

申请人： FUJIMI INCORPORATED

发明人： Makoto TABATA

IPC分类号： C09G1/02

摘要： Provided is a method of polishing a substrate in which a surface with high flatness and few defects can be realized with high efficiency. The method of polishing a substrate provided according to the present invention includes a plurality of stock polishing sub-steps that are performed by supplying a first polishing solution, a second polishing solution, and a third polishing solution in this order in a stock polishing step of a substrate. The relationships between a content. COMP1 of aa water-soluble polymer P1 contained in the first polish ng solution, a content COMP2 of a water-soluble polymer P2 contained in the second polishing solution, and a content COMP3 of a water-soluble polymer P3 contained in the third polishing solution satisfy COMP1

公开(公告)号：US20190022821A1

公开(公告)日：2019-01-24

申请号：US16080659

申请日：2017-02-13

申请人： FUJIMI INCORPORATED

发明人： Makoto TABATA

IPC分类号： B24B37/11 ,  H01L21/304 ,  H01L21/02 ,  B24B37/08

摘要： Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry PF to the silicon substrate. The total amount of the final stock polishing slurry PF supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 μg or less.

公开(公告)号：US20160189973A1

公开(公告)日：2016-06-30

申请号：US14910803

申请日：2014-06-12

申请人： FUJIMI INCORPORATED

发明人： Makoto TABATA ,  Shinichiro TAKAMI ,  Shogaku IDE

IPC分类号： H01L21/306 ,  C09G1/02

CPC分类号： H01L21/30625 ,  B24B37/28 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

摘要： [Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced.[Solution] A method for producing a polished object, which includes a double-side polishing step in which an object to be polished is subjected to double-side polishing using a double-side polishing composition including first abrasive grains having an average primary particle diameter of 40 nm or more and a nitrogen-containing water-soluble polymer to obtain a double-side polished object; and a single-side polishing step in which the double-side polished object is subjected to single-side polishing using a single-side polishing composition including second abrasive grains having an average primary particle diameter of 40 nm or less and a water-soluble polymer, and in which a ratio of an average primary particle diameter (A) of the first abrasive grains with respect to an average primary particle diameter (B) of the second abrasive grains (A)/(B) is more than 1 and 2.5 or less.

摘要翻译： 本发明提供一种抛光对象的制造方法，其能够显着地降低被抛光体的表面上的雾度，同时缺陷明显减少。 [解决方案]一种抛光对象的制造方法，其包括双面研磨工序，其中使用双面抛光组合物进行双面抛光，其中使用双面抛光组合物，所述双面抛光组合物包括具有平均初级粒径 为40nm以上，含氮水溶性聚合物为双面抛光对象物; 以及使用单平面抛光组合物对双面抛光对象进行单面抛光的单面抛光步骤，该单面抛光组合物包括平均一次粒径为40nm以下的第二磨料颗粒和水溶性聚合物 ，其中第一磨粒的平均一次粒径（A）相对于第二磨粒（A）/（B）的平均一次粒径（B）的比例大于1和2.5或 减。