POLISHING COMPOSITION
    1.
    发明申请
    POLISHING COMPOSITION 审中-公开
    抛光组合物

    公开(公告)号:US20150290760A1

    公开(公告)日:2015-10-15

    申请号:US14685868

    申请日:2015-04-14

    CPC classification number: B24B1/00 B24B7/22 C09G1/02

    Abstract: To provide a polishing composition which can polish a polishing object composed of a hard brittle material having the Vickers hardness of greater than 1,500 HV at a high polishing rate under a condition of a high polishing load (polishing pressure) of 150 g/cm2 or more and can suppress the generation of a defect such as scratches on the surface of the polishing object or the generation of scratches on a polishing pad, a holding jig or the like when polishing a polishing object composed of a hard brittle material using a polishing apparatus having the polishing pad. The polishing composition contains abrasive grains, water and an additive agent that is adsorbed on the surface of the polishing pad to decrease unnecessary frictional resistance between the polishing pad and the polishing object.

    Abstract translation: 提供一种抛光组合物,其可以在高抛光速率(抛光压力)为150g / cm 2以上的条件下以高抛光速率抛光由维氏硬度大于1500HV的硬脆性材料构成的抛光对象 并且可以使用具有由硬脆性材料构成的研磨对象物的抛光装置来研磨抛光对象表面上的划痕等缺陷或研磨垫,保持夹具等产生划痕的缺陷, 抛光垫。 抛光组合物含有磨料颗粒,水和吸附在抛光垫表面上的添加剂,以减少抛光垫和抛光对象之间不必要的摩擦阻力。

    POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING HARD BRITTLE MATERIAL SUBSTRATE

    公开(公告)号:US20180022960A1

    公开(公告)日:2018-01-25

    申请号:US15551492

    申请日:2016-02-12

    CPC classification number: C09G1/02 B24B37/044 C09K3/1409 C09K3/1463

    Abstract: There is provided a polishing composition for use in polishing of a surface of a polishing object including at least one of an oxide of a metal or a semimetal or a composite material of oxides of one or more metals and/or semimetals, and the polishing composition includes at least water and silica. The silica includes small-particle diameter silica having a particle diameter of 20 nm or more to 70 nm or less and large-particle diameter silica having a particle diameter of 100 nm or more to 200 nm or less, 2 mass % or more of the small-particle diameter silica is included in the polishing composition, 2 mass % or more of the large-particle diameter silica is included in the polishing composition, and a value obtained by dividing an average particle diameter of the large-particle diameter silica by an average particle diameter of the small-particle diameter silica is 2 or more.

Patent Agency Ranking