POLISHING COMPOSITION
    2.
    发明申请

    公开(公告)号:US20240400862A1

    公开(公告)日:2024-12-05

    申请号:US18696793

    申请日:2022-09-27

    Abstract: Provided is a polishing composition that can improve the surface quality of a surface to be polished after polishing while achieving an excellent polishing removal rate for an object to be polished. The polishing composition to be provided contains sodium permanganate as an oxidant. The polishing composition contains or does not contain an abrasive A with a Mohs hardness of less than 8 is contained as an abrasive. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.

    POLISHING METHOD AND POLISHING COMPOSITION
    3.
    发明公开

    公开(公告)号:US20240101867A1

    公开(公告)日:2024-03-28

    申请号:US18529465

    申请日:2023-12-05

    CPC classification number: C09G1/02

    Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

    POLISHING COMPOSITION
    4.
    发明申请

    公开(公告)号:US20240392164A1

    公开(公告)日:2024-11-28

    申请号:US18696798

    申请日:2022-09-27

    Abstract: A polishing composition that can achieve an excellent polishing removal rate for an object to be polished is provided. The polishing composition used for polishing the object to be polished is provided. The polishing composition contains water, and sodium permanganate as an oxidant. In some preferred embodiments, the polishing composition further contains a metal salt selected from salts each of which has a cation containing a metal belonging to Groups 3 to 16 in the periodic table, and an anion. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.

    POLISHING METHOD AND POLISHING COMPOSITION
    5.
    发明公开

    公开(公告)号:US20240117218A1

    公开(公告)日:2024-04-11

    申请号:US18275285

    申请日:2022-02-02

    CPC classification number: C09G1/02

    Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

    POLISHING COMPOSITION
    6.
    发明公开

    公开(公告)号:US20240110080A1

    公开(公告)日:2024-04-04

    申请号:US18529763

    申请日:2023-12-05

    CPC classification number: C09G1/02

    Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]:


    satisfying both of 500≤(C1/W1) and 0.04≤(C2/C1);  [A]



    satisfying both of 200≤(C1/√(W1)) and 8≤C2; and  [B]



    satisfying both of 500≤(C1/W1) and 8≤C2.  [C]

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