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公开(公告)号：US20160122591A1
公开(公告)日：2016-05-05
申请号：US14895318
申请日：2014-05-02
Applicant: FUJIMI INCORPORATED , TOAGOSEI CO., LTD.
Inventor： Kohsuke TSUCHIYA , Hisanori TANSHO , Taiki ICHITSUBO , Yoshio MORI
IPC: C09G1/02
CPC classification number: C09G1/02 , B24B37/00 , B24B37/044 , C09K3/1436 , C09K3/1463 , H01L21/02024 , H01L21/02052
Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.
Abstract translation: 本发明提供了在磨料存在下使用的硅晶片抛光组合物。 该组合物包括硅晶片抛光促进剂，含酰胺基聚合物和水。 含酰胺基的聚合物在其主链中具有建筑单元A. 构成单元A包含构成含酰胺基聚合物的主链的主链碳原子和仲酰胺基或叔酰胺基。 构成仲酰胺基或叔酰胺基的羰基碳原子与主链碳原子直接相连。
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公开(公告)号：US20160215189A1
公开(公告)日：2016-07-28
申请号：US14917734
申请日：2014-09-22
Applicant: FUJIMI INCORPORATED
Inventor： Kohsuke TSUCHIYA , Yoshio MORI
CPC classification number: C09K3/1463 , B24B37/00 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1436 , H01L21/02024 , H01L21/02052
Abstract: Provided is a polishing composition with which surface defects can be efficiently reduced. This invention provides a polishing composition comprising a water-soluble polymer MC-end. The main chain of the water-soluble polymer MC-end is formed with a non-cationic region as its main structural part and a cationic region located at least at one end of the main chain. The cationic region has at least one cationic group.
Abstract translation: 提供了能够有效地降低表面缺陷的研磨用组合物。 本发明提供一种包含水溶性聚合物MC-末端的抛光组合物。 水溶性聚合物MC-末端的主链以非阳离子区域为主要结构部分，至少位于主链的一端形成阳离子区域。 阳离子区域具有至少一个阳离子基团。
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Patent Agency Ranking
公开(公告)号：US20160215188A1
公开(公告)日：2016-07-28
申请号：US14917728
申请日：2014-09-22
Applicant: FUJIMI INCORPORATED
Inventor： Kohsuke TSUCHIYA , Yoshio MORI
CPC classification number: C09K3/1463 , B24B37/00 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1436 , H01L21/02024 , H01L21/02052
Abstract: Provided is a polishing composition with which haze and surface defects can be reduced. This invention provides a polishing composition comprising a synthetic water-soluble polymer ML-end that has a hydrophobic region at least at one end of its main chain. The hydrophobic region has at least one hydrophobic group derived from a polymerization initiator.
Abstract translation: 提供了可以降低雾度和表面缺陷的抛光组合物。 本发明提供一种抛光组合物，其包括合成的水溶性聚合物ML-末端，其至少在其主链的一端具有疏水区域。 疏水区域具有至少一个衍生自聚合引发剂的疏水基团。
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公开(公告)号：US20240400862A1
公开(公告)日：2024-12-05
申请号：US18696793
申请日：2022-09-27
Applicant: FUJIMI INCORPORATED
Inventor： Yoshio MORI , Yuichiro NAKAGAI , Hiroyuki ODA
Abstract: Provided is a polishing composition that can improve the surface quality of a surface to be polished after polishing while achieving an excellent polishing removal rate for an object to be polished. The polishing composition to be provided contains sodium permanganate as an oxidant. The polishing composition contains or does not contain an abrasive A with a Mohs hardness of less than 8 is contained as an abrasive. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
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公开(公告)号：US20240392164A1
公开(公告)日：2024-11-28
申请号：US18696798
申请日：2022-09-27
Applicant: FUJIMI INCORPORATED
Inventor： Yoshio MORI , Yuichiro NAKAGAI , Hiroyuki ODA
Abstract: A polishing composition that can achieve an excellent polishing removal rate for an object to be polished is provided. The polishing composition used for polishing the object to be polished is provided. The polishing composition contains water, and sodium permanganate as an oxidant. In some preferred embodiments, the polishing composition further contains a metal salt selected from salts each of which has a cation containing a metal belonging to Groups 3 to 16 in the periodic table, and an anion. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
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公开(公告)号：US20220243093A1
公开(公告)日：2022-08-04
申请号：US17619340
申请日：2020-06-15
Applicant: FUJIMI INCORPORATED
Inventor： Yasuaki ITO , Shinichiro TAKAMI , Yoshio MORI
IPC: C09G1/02
Abstract: Provided is a polishing composition that can reduce the friction force against an object to be polished while maintaining a favorable polishing removal rate. The polishing composition provided by the present invention contains water, an abrasive, and a composite metal oxide as an oxidant. The polishing composition further contains an anionic polymer. In some preferred embodiments, the polishing composition contains a permanganate as the composite metal oxide. The polishing composition is suitable for polishing a material having a Vickers hardness of 1500 Hv or higher.
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公开(公告)号：US20170253767A1
公开(公告)日：2017-09-07
申请号：US15602679
申请日：2017-05-23
Applicant: FUJIMI INCORPORATED , TOAGOSEI CO., LTD.
Inventor： Kohsuke TSUCHIYA , Hisanori TANSHO , Taiki ICHITSUBO , Yoshio MORI
Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.
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