公开(公告)号：US20210362147A1

公开(公告)日：2021-11-25

申请号：US17397272

申请日：2021-08-09

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Go KOBAYASHI ,  Junichi HASEGAWA ,  Noritaka MATSUBARA

IPC: B01L3/00

Abstract: A storage container includes: a substrate having a plurality of storage wells to store an object therein, the storage wells being formed on a predetermined substrate surface of the substrate. Further, the storage wells each includes an opening forming portion forming an opening portion opening on the substrate surface, and having an inclined surface that inclines from the substrate surface downward in a depth direction on an inner surface of the opening portion; and a bottomed storage portion that has a side wall surface extending in a direction perpendicular to the substrate surface on a lower side in the depth direction of the storage well relative to the opening forming portion, and that communicates with a region on the substrate surface through the opening portion, and a lower end of the inclined surface is connected to the side wall surface of the storage portion, forming a ridgeline.

公开(公告)号：US20160336719A1

公开(公告)日：2016-11-17

申请号：US15223549

申请日：2016-07-29

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Kazuaki KIYOTA ,  Go KOBAYASHI

IPC: H01S5/0625 ,  H01S5/50 ,  H01S5/343

Abstract: An integrated semiconductor laser device includes: a semiconductor laser including a first active layer; a semiconductor optical amplifier including a second active layer and configured to amplify output laser light of the semiconductor laser; and a substrate on which the semiconductor laser and the semiconductor optical amplifier are integrated. The first active layer and the second active layer each include a multiple quantum well structure, and the second active layer includes a larger number of quantum wells than the first active layer.

Abstract translation: 集成半导体激光器件包括：包括第一有源层的半导体激光器; 半导体光放大器，包括第二有源层，被配置为放大半导体激光器的输出激光; 以及其上集成有半导体激光器和半导体光放大器的基板。 第一有源层和第二有源层各自包括多量子阱结构，并且第二有源层包括比第一有源层更大数量的量子阱。

公开(公告)号：US20230244047A1

公开(公告)日：2023-08-03

申请号：US18059054

申请日：2022-11-28

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Kazuya NAGASHIMA ,  Atsushi IZAWA ,  Atsushi KAJI ,  Go KOBAYASHI

IPC: G02B6/42

CPC classification number: G02B6/4271 ,  G02B6/4244 ,  G02B6/4269 ,  G02B6/4257

Abstract: An optical module includes: a casing in which light is propagated; a heating portion; a device arranged inside the casing and configured to change, when heated, characteristics of the light propagated inside the casing; and a first member thermally connected to the heating portion and the device, the first member including a hollow arranged in a heat transfer path from the heating portion to the device and configured to prevent convective heat transmission to an inside of the casing.

公开(公告)号：US20150357792A1

公开(公告)日：2015-12-10

申请号：US14829083

申请日：2015-08-18

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Go KOBAYASHI

IPC: H01S5/125 ,  G02B6/43 ,  H01S5/026 ,  H01S5/10 ,  H01S5/042 ,  H01S5/40

CPC classification number: H01S5/1231 ,  G02B6/00 ,  G02B6/43 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/1203 ,  H01S5/124 ,  H01S5/125 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4087

Abstract: A semiconductor laser element includes: a semiconductor-layered structure including a waveguide core layer and having a distributed feedback laser portion and a distributed Bragg reflection portion, the waveguide core layer having a length continuous in an optical cavity length direction and a diffraction grating layer being disposed in vicinity of the waveguide core layer and along the waveguide core layer in the distributed feedback laser portion, and the waveguide core layer being disposed discretely and periodically to form a diffraction grating in the distributed Bragg reflection portion; and an electrode for injecting a current to the distributed feedback laser portion. The distributed feedback laser portion oscillates a laser light at a wavelength corresponding to a period of the diffraction grating layer. The diffraction grating formed by the waveguide core layer in the distributed Bragg reflection portion is set to have a stop band including the wavelength of the laser light.

Abstract translation: 半导体激光元件包括：包括波导芯层并具有分布反馈激光部分和分布布拉格反射部分的半导体层状结构，所述波导芯层具有在光腔长度方向上连续的长度，衍射光栅层为 设置在分布反馈激光部分中的波导芯层附近并且沿着波导芯层，并且波导芯层离散且周期性地设置，以在分布式布拉格反射部分中形成衍射光栅; 以及用于向分布式反馈激光器部分注入电流的电极。 分布式反馈激光器部分以与衍射光栅层的周期相对应的波长振荡激光。 由分布式布拉格反射部分中的波导芯层形成的衍射光栅被设定为具有包括激光波长的阻带。