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1.发明授权Transitory current recirculation through a power switching transistor driving an inductive load 失效通过驱动感性负载的功率开关晶体管的瞬态电流再循环
公开(公告)号：US4962346A
公开(公告)日：1990-10-09
申请号：US180501
申请日：1988-04-12
IPC分类号： H03K17/16 , H03K17/082 , H03K17/64
CPC分类号： H03K17/0826
摘要： A circuit for recirculating an inductive load's (L) discharge current through the driving power switching transistor (Tpw) utilizes a control transistor (Tc) of opposite polarity to that of the power transistor and capable of withstanding a minimum fraction (1/.beta.) of the discharge current. The circuit has the advantage of allowing recirculation of current with a fixed overvoltage independent of the value of the supply voltage, without requiring additional power devices. The circuit may also be provided with means (D1, D2 and DZ1) to turn-on the control transistor in the presence of concomitant supply overvoltages to protect the power device from dumping effects.
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公开(公告)号：US4905067A
公开(公告)日：1990-02-27
申请号：US173213
申请日：1988-03-25
IPC分类号： H01L21/8222 , H01L27/02 , H01L27/06 , H03K17/16 , H03K17/64
CPC分类号： H01L27/0229 , H01L27/0248 , H03K17/16 , H03K17/64
摘要： An integrated circuit for driving inductive loads comprises at least one substrate and a plurality of separate epitaxial wells, and has at least one output terminal for connection to an inductive load and a reference terminal for connection to a reference voltage. To reliably isolate the different epitaxial wells in each operating state, the circuit comprises diodes interposed between the substrate on one side and the output and reference terminals on the other to set the substrate to the reference potential when the potential on the output terminal is greater than the reference potential and to set the substrate to the output potential when the latter becomes smaller than the reference potential.
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">3.发明授权Inductive load discharge current recirculation circuit with selectable "fast" and "low" modes 失效具有可选“快速”和“低”模式的感性负载放电电流再循环电路
公开(公告)号：US4916378A
公开(公告)日：1990-04-10
申请号：US380220
申请日：1989-07-14
申请人： Fabio Marchio' , Marco Morelli , Francesco Tricoli
发明人： Fabio Marchio' , Marco Morelli , Francesco Tricoli
IPC分类号： H01L27/06 , H01L21/8222 , H02P8/12 , H03K17/0814 , H03K17/16 , H03K17/64
CPC分类号： H03K17/08146
摘要： A circuit for recirculating the discharge current of an inductive load driven from the high side of the supply at two different recirculation voltages which may be selected for implementing a slow or a fast recirculation of the current advantageously employs a single power element represented by an NPN transistor functionally connected in parallel to the load. During a driving phase of the load a slow recirculation of the discharge current is implemented by delivering to the base of the recirculation NPN transistor a current sufficient to keep it saturated. upon switching off the load, when a fast recirculation of the dischage current through the recirculation NPN transistor is desired, delivery of the saturating current to the base of the recirculation transistor is interrupted and the transistor remains conducting having a diode and a zener diode in opposition thereto connected in series between ground and the base of the recirculation NPN transistor for permitting the recirculation at a voltage substantially equal to the sum of the voltage drop through the first diode, the zener voltage and the base-emitter voltage of the recirculation NPN transistor.
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4.发明授权Small area and low current drain frequency divider cell for integrated circuits 失效用于集成电路的小面积和低电流漏极分频器
公开(公告)号：US5012130A
公开(公告)日：1991-04-30
申请号：US394226
申请日：1989-08-15
申请人： Paolo Menegoli , Marco Morelli , Francesco Tricoli
发明人： Paolo Menegoli , Marco Morelli , Francesco Tricoli
CPC分类号： H03K3/289
摘要： A pair of control transistors and a pair of storage transistors have their collectors coupled to a current source. The emitters of the storage transistors are grounded and the emitters of the control transistors are coupled to the bases of the storage transistors. The control transistor collector and base electrodes are cross-coupled, and the storage transistor collector and base electrodes are also cross-coupled. The emitter of each control transistor is connected to the collector of the associative storage transistor through a respective resistor. Two diodes in series connect the collectors of the control transistor, and a command transistor having a grounded emitter electrode, drives the common node of the diodes.
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5.发明授权
公开(公告)号：US5229907A
公开(公告)日：1993-07-20
申请号：US536886
申请日：1990-06-13
申请人： Marco Morelli , Fabio Marchio , Bruno Cavalli
发明人： Marco Morelli , Fabio Marchio , Bruno Cavalli
摘要： The device for protection comprises a zener diode voltage limiter having a breakdown voltage pre-set at a value (say, 30 volts) lower than the maximum value sustainable by the protected circuit in the closed condition and a quenching circuit having a pre-set lag controlled by each overvoltage impulse and suitable for disactivating said voltage limiter and to control the opening of said protected circuit with a time lag pre-set with respect to the start of each overvoltage impulse. In succession to said voltage limiter there is introduced in addition a zener diode with a higher breakdown voltage, say, equal to 110 volts, which allows the limitation to such a value of any overvoltages having a very low energy content superimposed over overvoltages having limited amplitude and long duration.
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6.发明申请INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 有权具有双重测量尺寸和高全尺寸值的集成压力传感器公开(公告)号：US20080208425A1
公开(公告)日：2008-08-28
申请号：US12018068
申请日：2008-01-22
申请人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
发明人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
CPC分类号： G01L9/0054 , G01L9/0045 , G01L15/00
摘要： In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.
摘要翻译： 在具有双重测量尺的压力传感器中：半导体材料的整体主体具有第一主表面，主体区域和压力作用在其上的敏感部分; 在整体式主体中形成空腔，并通过作为压力的函数而变形的柔性且可变形的膜与第一主表面分离，并且布置在敏感部分的内部并被体区域包围; 对第一压力值敏感的压阻型低压检测元件集成在膜中，并具有作为膜的变形的函数的可变电阻; 此外，在敏感部分内部的本体区域中形成压阻型高压检测元件，并且具有作为压力的函数的可变电阻。 高压检测元件对第二压力值敏感。
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公开(公告)号：US6037826A
公开(公告)日：2000-03-14
申请号：US99243
申请日：1993-07-28
申请人： Vanni Poletto , Marco Morelli
发明人： Vanni Poletto , Marco Morelli
IPC分类号： H01L29/73 , G05F1/569 , H01L21/331 , H03K17/0422 , H03K17/08
CPC分类号： G05F1/569 , H03K17/0422
摘要： Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Unlike the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.
摘要翻译： 双极功率晶体管的饱和度通过感测由饱和晶体管最终注入到集成电路的衬底中的电流来控制，并且使用该信号对通过功率晶体管的基极驱动的电流施加限制作用 专用驱动电路。 与现有技术的抗饱和系统不同，不再需要精确地监视双极功率晶体管的端子两端的工作电压。 合适的感测电阻可以方便地集成在与双极晶体管的经常复杂的集成结构相距一定距离处。 本发明的系统提供了许多优点，并且仅在功率晶体管正确地达到饱和状态，但在任何不期望的后果之前才能确保抗饱和电路的干预。
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公开(公告)号：US5818274A
公开(公告)日：1998-10-06
申请号：US740345
申请日：1996-11-07
IPC分类号： H03K3/037
CPC分类号： H03K3/037
摘要： A flip-flop circuit able to commute in correspondence with any logic transition of the input signal using a flip-flop and a logic gate of the EXNOR type receiving at its input a signal and the inverted output of the flip-flop. To the output of the EXNOR gate is connected a set-reset flip-flop which allows a reset to be effected after each commutation of the circuit in order to prepare it for the next transition.
摘要翻译： 触发器电路能够使用触发器和EXNOR类型的逻辑门与输入信号的任何逻辑转换相对应地通勤，在其输入端接收信号和触发器的反相输出。 在EXNOR门的输出端连接一个置位复位触发器，该触发器允许在每次电路换向之后进行复位，以便为下一个转换做好准备。
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9.发明授权Electronic semiconductor device with integrated inductor, and manufacturing method 有权具有集成电感的电子半导体器件及其制造方法公开(公告)号：US09006862B2
公开(公告)日：2015-04-14
申请号：US13608880
申请日：2012-09-10
申请人： Vincenzo Palumbo , Dario Paci , Paolo Iuliano , Fausto Carace , Marco Morelli
发明人： Vincenzo Palumbo , Dario Paci , Paolo Iuliano , Fausto Carace , Marco Morelli
IPC分类号： H01L29/72 , H01L23/522 , H01L23/64 , H01L25/16
CPC分类号： H01L23/5227 , H01L23/645 , H01L25/16 , H01L2224/16 , H01L2224/48091 , H01L2224/48463 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： An embodiment of an electronic device includes first and second semiconductor bodies. The first semiconductor body houses a first conductive strip having a first end portion and a second end portion, and houses a first conduction terminal electrically coupled to the first end portion and facing a surface of the first semiconductor body. The second semiconductor body houses a second conductive strip having a third end portion and a fourth end portion, and houses a second conduction terminal electrically coupled to the third end portion and facing a surface of the second semiconductor body. The first and second semiconductor bodies are arranged relative to one another so that the respective surfaces face one another, and the first conduction terminal and the second conduction terminal are coupled to one another by means of a conductive element so as to form a loop of an inductor.
摘要翻译： 电子设备的实施例包括第一和第二半导体本体。 第一半导体体容纳具有第一端部和第二端部的第一导电带，并且容纳电耦合到第一端部并面向第一半导体本体的表面的第一导电端子。 第二半导体体容纳具有第三端部和第四端部的第二导电带，并且容纳与第三端部电耦合并面向第二半导体本体的表面的第二导电端子。 第一和第二半导体本体相对于彼此布置，使得各个表面彼此面对，并且第一导电端子和第二导电端子通过导电元件彼此耦合以形成环路 电感。
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10.发明授权Integrated pressure sensor with double measuring scale and a high full-scale value 有权集成式压力传感器，具有双重量程和高满量程公开(公告)号：US07578196B2
公开(公告)日：2009-08-25
申请号：US12018068
申请日：2008-01-22
申请人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
发明人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
IPC分类号： G01L9/00
CPC分类号： G01L9/0054 , G01L9/0045 , G01L15/00
摘要： In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.
摘要翻译： 在具有双重测量尺的压力传感器中：半导体材料的整体主体具有第一主表面，主体区域和压力作用在其上的敏感部分; 在整体式主体中形成空腔，并通过作为压力的函数而变形的柔性且可变形的膜与第一主表面分离，并且布置在敏感部分的内部并被体区域包围; 对第一压力值敏感的压阻型低压检测元件集成在膜中，并具有作为膜的变形的函数的可变电阻; 此外，在敏感部分内部的本体区域中形成压阻型高压检测元件，并且具有作为压力的函数的可变电阻。 高压检测元件对第二压力值敏感。
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