Laser lift-off masks
    1.
    发明授权

    公开(公告)号:US10811575B2

    公开(公告)日:2020-10-20

    申请号:US16049783

    申请日:2018-07-30

    Abstract: Techniques related to laser lift-off masks are disclosed. In some embodiments, masking material is applied to a substrate that is attached to a plurality of semiconductor device sets. More specifically, the masking material is applied to one or more regions of the substrate between the semiconductor device sets. When the semiconductor device sets are embedded in a filling material, the masking material may be situated between the substrate and the filling material. Thus, transmitting light through the substrate toward the semiconductor device sets causes the substrate to become detached from the semiconductor device sets. However, the light is at least partially occluded by the masking material.

    GRIN lens structure in micro-LED devices

    公开(公告)号:US11275202B1

    公开(公告)日:2022-03-15

    申请号:US15824972

    申请日:2017-11-28

    Abstract: A GaN layer of micro-LEDs is exposed to ion implantation to amorphize one or more regions of the GaN layer. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions are implanted in a region overlapping an active region that emits light to function as a converging GRIN (gradient-index) lens. The ion implanted regions collimate light rays that propagate along predetermined directions. As such, the light extraction from and the focus of the micro-LEDs is increased.

    Spacer for self-aligned mesa
    6.
    发明授权

    公开(公告)号:US11101418B1

    公开(公告)日:2021-08-24

    申请号:US16566750

    申请日:2019-09-10

    Abstract: Described are light emitting apparatus with self-aligned elements and techniques for manufacturing such light emitting apparatus. In certain embodiments, a light emitting apparatus includes a mesa formed by a plurality of semiconductor layers. The light emitting apparatus further includes an electrical contact on one of the semiconductor layers and a spacer around the electrical contact. The spacer is aligned with respect to the electrical contact, which permits etching around the spacer to define the shape of the mesa in such a way that the mesa is also aligned with respect to the electrical contact. In particular, the electrical contact is substantially centered between opposing sidewalls of the mesa.

    Reflectors having overall mesa shapes

    公开(公告)号:US10770634B1

    公开(公告)日:2020-09-08

    申请号:US16379426

    申请日:2019-04-09

    Abstract: Disclosed are techniques related to reflectors having overall mesa shapes. Such a reflector may be formed over an overall mesa-shaped, layered structure of an apparatus for emitting light. The overall mesa-shaped, layered structure may comprise a mesa complement structure, a first-type doped semiconductor, a light emission layer, and a second-type doped semiconductor arranged in layers. Thus, the reflector may be configured to collimate light that emits from the light emission layer and reaches the reflector through the mesa complement structure.

    LASER LIFT-OFF MASKS
    9.
    发明申请

    公开(公告)号:US20200035880A1

    公开(公告)日:2020-01-30

    申请号:US16049783

    申请日:2018-07-30

    Abstract: Techniques related to laser lift-off masks are disclosed. In some embodiments, masking material is applied to a substrate that is attached to a plurality of semiconductor device sets. More specifically, the masking material is applied to one or more regions of the substrate between the semiconductor device sets. When the semiconductor device sets are embedded in a filling material, the masking material may be situated between the substrate and the filling material. Thus, transmitting light through the substrate toward the semiconductor device sets causes the substrate to become detached from the semiconductor device sets. However, the light is at least partially occluded by the masking material.

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