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    Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
    2.
    发明授权
    Three-dimensional container diode for use with multi-state material in a non-volatile memory cell 有权
    用于非易失性存储单元中的多态材料的三维容器二极管

    公开(公告)号：US06429449B1

    公开(公告)日：2002-08-06

    申请号：US09569992

    申请日：2000-05-12

    申请人： Fernando Gonzalez ,  Raymond A. Turi ,  Graham R. Wolstenholme ,  Charles L. Ingalls

    发明人： Fernando Gonzalez ,  Raymond A. Turi ,  Graham R. Wolstenholme ,  Charles L. Ingalls

    IPC分类号： H01L4700

    CPC分类号： H01L27/24 ,  H01L27/1021

    摘要： A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.

    摘要翻译： 用于将电流传送到存储器单元中的多状态存储器元件的垂直取向的二极管。 垂直二极管可以设置在从硅或氧化物层的顶部向下延伸的二极管容器中，并且可以由靠近二极管容器的内表面设置的硅和/或金属层的组合形成。 多状态存储元件可以由二极管上方的多态材料（例如硫族化物）形成以完成存储单元。

    LOW VOLTAGE SENSE AMPLIFIER AND SENSING METHOD
    6.
    发明申请
    LOW VOLTAGE SENSE AMPLIFIER AND SENSING METHOD 有权
    低电压检测放大器和感测方法

    公开(公告)号：US20090168551A1

    公开(公告)日：2009-07-02

    申请号：US12399757

    申请日：2009-03-06

    申请人： Tae Kim ,  Charles L. Ingalls ,  David Pinney ,  Howard Kirsch

    发明人： Tae Kim ,  Charles L. Ingalls ,  David Pinney ,  Howard Kirsch

    IPC分类号： G11C7/00 ,  G11C7/06 ,  G11C5/14

    CPC分类号： G11C7/08 ,  G11C7/065 ,  G11C7/12 ,  G11C11/4091 ,  G11C11/4094 ,  G11C2207/005 ,  G11C2207/2227

    摘要： Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period.

    摘要翻译： 感测耦合到数字线并且将数字线耦合到读出放大器的数据状态的系统和方法。 在感测耦合到数字线的数据状态时，数字线耦合到感测节点并且提供给读出放大器的驱动电压。 响应于驱动电压而锁存数据状态。 在将数字线耦合到读出放大器时，数字线在第一时间段耦合到读出放大器，并在第二时间段内从读出放大器去耦。 数字线以跟随第二时间段的受控速率耦合到读出放大器。

    Open digit line array architecture for a memory array
    7.
    发明授权
    Open digit line array architecture for a memory array 有权
    用于存储器阵列的开放数字线阵列架构

    公开(公告)号：US07512025B2

    公开(公告)日：2009-03-31

    申请号：US12009521

    申请日：2008-01-18

    申请人： Sei Seung Yoon ,  Charles L. Ingalls ,  David Pinney ,  Howard C. Kirsch

    发明人： Sei Seung Yoon ,  Charles L. Ingalls ,  David Pinney ,  Howard C. Kirsch

    IPC分类号： G11C7/00

    CPC分类号： G11C7/18 ,  G11C7/04 ,  G11C7/065 ,  G11C7/12 ,  G11C7/14 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4097

    摘要： A system and method for sensing a data state stored by a memory cell that includes coupling a first digit line and a second digit line to a precharge voltage and further coupling a memory cell to the first digit line. At least one digit line other than the first and second digit lines is driven to a reference voltage level and the at least one digit line is coupled to the second digit line to establish a reference voltage in the second digit line. A voltage differential is sensed between the first digit line and the second digit line, and a data state based on the voltage differential is latched in response.

    摘要翻译： 一种用于感测由存储器单元存储的数据状态的系统和方法，包括将第一数字线和第二数字线耦合到预充电电压，并进一步将存储单元耦合到第一数字线。 除了第一和第二数字线之外的至少一个数字线被驱动到参考电压电平，并且至少一个数字线耦合到第二数字线以在第二数字线中建立参考电压。 在第一数字线和第二数字线之间感测到电压差，并且响应地锁存基于电压差的数据状态。

    Word line driver for negative voltage
    9.
    发明授权
    Word line driver for negative voltage 有权
    字线驱动器为负电压

    公开(公告)号：US06901023B2

    公开(公告)日：2005-05-31

    申请号：US10852899

    申请日：2004-05-25

    申请人： Howard Kirsch ,  Tae Hyoung Kim ,  Charles L. Ingalls

    发明人： Howard Kirsch ,  Tae Hyoung Kim ,  Charles L. Ingalls

    IPC分类号： G11C8/08 ,  G11C7/00

    CPC分类号： G11C8/08

    摘要： A word line driver includes multiple current paths for driving a word line of a memory device to a negative voltage and a positive voltage. When driving the word line from the negative voltage to the positive voltage, the word line driver uses a first current path to drive the word line to the positive voltage in one stage. When driving the word line from the positive voltage to the negative voltage, the word line driver drives the word line from the positive voltage to ground using the first current path in a first stage. In a second stage, the word driver further drives the word line from ground to the negative voltage in using a second current path.

    摘要翻译： 字线驱动器包括用于将存储器件的字线驱动到负电压和正电压的多个电流路径。 当将字线从负电压驱动到正电压时，字线驱动器使用第一电流路径将字线驱动到一级的正电压。 当从正电压驱动字线到负电压时，字线驱动器在第一级中使用第一电流路径将字线从正电压驱动到地。 在第二阶段中，字驱动器使用第二电流路径进一步将字线从地驱动到负电压。

    Word line driver for negative voltage
    10.
    发明授权
    Word line driver for negative voltage 有权

    公开(公告)号：US06754131B2

    公开(公告)日：2004-06-22

    申请号：US10231389

    申请日：2002-08-29

    申请人： Howard Kirsch ,  Tae Hyoung Kim ,  Charles L. Ingalls

    发明人： Howard Kirsch ,  Tae Hyoung Kim ,  Charles L. Ingalls

    IPC分类号： G11C800

    CPC分类号： G11C8/08

    摘要： A word line driver includes multiple current paths for driving a word line of a memory device to a negative voltage and a positive voltage. When driving the word line from the negative voltage to the positive voltage, the word line driver uses a first current path to drive the word line to the positive voltage in one stage. When driving the word line from the positive voltage to the negative voltage, the word line driver drives the word line from the positive voltage to ground using the first current path in a first stage. In a second stage, the word driver further drives the word line from ground to the negative voltage in using a second current path.