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公开(公告)号：US20150004743A1
公开(公告)日：2015-01-01
申请号：US14317479
申请日：2014-06-27
Applicant: First Solar, Inc.
Inventor： Pratima Addepalli , Benyamin Buller , Markus Gloeckler , Akhlesh Gupta , David Hwang , Andrei Los , Rick Powell , Rui Shao , Gang Xiong , Ming Lun Yu , San Yu , Zhibo Zhao
IPC: H01L31/18 , H01L31/032
CPC classification number: H01L31/073 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。
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2.发明申请公开(公告)号：US20140261667A1
公开(公告)日：2014-09-18
申请号：US14209924
申请日：2014-03-13
Applicant: FIRST SOLAR, INC.
Inventor： Benyamin Buller , Igor Sankin , Long Cheng , Jigish Trivedi , Jianjun Wang , Kieran Tracy , Scott Christensen , Gang Xiong , Markus Gloeckler , San Yu
IPC: H01L31/0224 , H01L31/18
CPC classification number: H01L31/1828 , H01L31/022425 , H01L31/02966 , H01L31/046 , H01L31/073 , H01L31/1832 , Y02E10/543
Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.
Abstract translation: 公开了一种用于PV器件的背面电极和形成方法。 在吸收材料上提供ZnTe材料，并且在ZnTe材料上提供MoNx材料。 在MoNx层上方或下方的背电极中也可以包含Mo材料，也可以在MoNx层上设置金属层。
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3.发明申请公开(公告)号：US20160126397A1
公开(公告)日：2016-05-05
申请号：US14992304
申请日：2016-01-11
Applicant: First Solar, Inc.
Inventor： San Yu , Veluchamy Palaniappagounder , Pratima Addepalli , Imran Khan
IPC: H01L31/073 , H01L31/18 , H01L31/0216 , H01L31/0224
CPC classification number: H01L31/073 , H01L31/02167 , H01L31/022425 , H01L31/022466 , H01L31/0336 , H01L31/18 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
Abstract translation: 光电器件包括衬底，透明导电氧化物，n型窗口层，p型吸收层和电子反射层。 电子反射层可以包括掺杂有碲化铜的碲化锌，与碲化碲合金的碲化镉，或者是各种组成中含有锌，铜，镉和碲的多层双层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成层。 该方法包括在p型吸收层上形成电子反射层。
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公开(公告)号：US09853177B2
公开(公告)日：2017-12-26
申请号：US14992304
申请日：2016-01-11
Applicant: First Solar, Inc.
Inventor： San Yu , Veluchamy Palaniappagounder , Pratima Addepalli , Imran Khan
IPC: H01L31/02 , H01L31/073 , H01L31/18 , H01L31/0224 , H01L31/0336 , H01L31/0216
CPC classification number: H01L31/073 , H01L31/02167 , H01L31/022425 , H01L31/022466 , H01L31/0336 , H01L31/18 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
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Patent Agency Ranking
5.发明申请公开(公告)号：US20140284750A1
公开(公告)日：2014-09-25
申请号：US14221245
申请日：2014-03-20
Applicant: FIRST SOLAR, INC.
Inventor： San Yu , Veluchamy Palaniappagounder , Pratima Addepalli , Imran Khan
IPC: H01L31/0328 , H01L31/18
CPC classification number: H01L31/073 , H01L31/02167 , H01L31/022425 , H01L31/022466 , H01L31/0336 , H01L31/18 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
Abstract translation: 光电器件包括衬底，透明导电氧化物，n型窗口层，p型吸收层和电子反射层。 电子反射层可以包括掺杂有碲化铜的碲化锌，与碲化碲合金的碲化镉，或者是各种组成中含有锌，铜，镉和碲的多层双层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成层。 该方法包括在p型吸收层上形成电子反射层。
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公开(公告)号：US09450115B2
公开(公告)日：2016-09-20
申请号：US14212584
申请日：2014-03-14
Applicant: First Solar, Inc.
Inventor： Scott Christensen , Pawel Mrozek , Gang Xiong , San Yu
IPC: H01L21/00 , H01L31/0224 , H01L31/0392 , H01L31/073
CPC classification number: H01L31/022425 , H01L31/03925 , H01L31/073 , H01L31/1828 , H01L31/186 , Y02E10/543 , Y02P70/521
Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.
Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法，该方法包括在半导体吸收层上沉积或形成背接触层之前从半导体吸收体层去除表面污染物的步骤，至少使用至少去除表面污染物 干蚀刻工艺和湿蚀刻工艺之一。
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公开(公告)号：US09406829B2
公开(公告)日：2016-08-02
申请号：US14317479
申请日：2014-06-27
Applicant: First Solar, Inc.
Inventor： Pratima Addepalli , Benyamin Buller , Markus Gloeckler , Akhlesh Gupta , David Hwang , Andrei Los , Rick Powell , Rui Shao , Gang Xiong , Ming Lun Yu , San Yu , Zhibo Zhao
IPC: H01L21/00 , H01L31/073 , H01L31/18
CPC classification number: H01L31/073 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。
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8.发明授权公开(公告)号：US09269849B2
公开(公告)日：2016-02-23
申请号：US14221245
申请日：2014-03-20
Applicant: First Solar, Inc.
Inventor： San Yu , Veluchamy Palaniappagounder , Pratima Addepalli , Imran Khan
IPC: H01L31/02 , H01L31/18 , H01L31/0224 , H01L31/0336 , H01L31/073
CPC classification number: H01L31/073 , H01L31/02167 , H01L31/022425 , H01L31/022466 , H01L31/0336 , H01L31/18 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
Abstract translation: 光电器件包括衬底，透明导电氧化物，n型窗口层，p型吸收层和电子反射层。 电子反射层可以包括掺杂有碲化铜的碲化锌，与碲化碲合金的碲化镉，或者是各种组成中含有锌，铜，镉和碲的多层双层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成层。 该方法包括在p型吸收层上形成电子反射层。
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公开(公告)号：US20140273334A1
公开(公告)日：2014-09-18
申请号：US14212584
申请日：2014-03-14
Applicant: First Solar, Inc.
Inventor： Scott Christensen , Pawel Mrozek , Gang Xiong , San Yu
IPC: H01L31/18
CPC classification number: H01L31/022425 , H01L31/03925 , H01L31/073 , H01L31/1828 , H01L31/186 , Y02E10/543 , Y02P70/521
Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.
Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法，该方法包括在半导体吸收层上沉积或形成背接触层之前从半导体吸收体层去除表面污染物的步骤，至少使用至少去除表面污染物 干蚀刻工艺和湿蚀刻工艺之一。
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