摘要:
The pressure sensor consists of a substrate and a diaphragm joined together around the periphery so as to form a chamber. The surface of the diaphragm facing away from the substrate is exposed to a medium whose pressure is to be measured. To protect the diaphragm against corrosion or abrasion, the diaphragm surface exposed to the medium is covered with a layer of silicon carbide, preferably by chemical vapor deposition.
摘要:
This rugged, temperature-shock-insensitive, and low-cost pressure sensor (1) has a diaphragm (2) and a substrate (3) which are alumina-ceramic parts, preferably with a purity of 96%, are joined together in a defined spaced relationship and parallel to each other by means of an intermediate layer, forming a, preferably closed, chamber, and have flat inner surfaces which are provided with at least one conductive layer for forming at least one capacitor and are electrically connected to the respective rear side of the diaphragm or substrate via through-hole coatings. For the conductive layers (6, 7, 8), the through-hole coatings (12, 13, 14), and the intermediate layer (5), use is made of a conductive paste or a resistive paste with a sheet resistivity not higher than 1 ohm/square, which are applied using silk-screening techniques.
摘要:
The substrate (12) and/or the diaphragm (11) of the pressure sensor (10) are made of ceramic, glass, or a single-crystal material. The side of the diaphragm (11) facing the substrate (12) is covered with a layer of silicon carbide, niobium, or tantalum which, in turn, is covered with a protective layer (21) and serves as one capacitor electrode (14). The side of the substrate (12) facing the diaphragm (11) is covered with at least one additional layer of any one of said materials which, in turn, is covered with an additional protective layer (22) and serves as the second capacitor electrode (15). Substrate (12) and diaphragm (11) are soldered together by a formed part of active solder (20) which also serves as a spacer.This pressure sensor can be manufactured in a single soldering step. The maximum load capacity of the diaphragm is determined not by the strength of the joint, but only by the strength of the diaphragm material. The pressure sensor can be used at higher temperatures than pressure sensors with glass-frit joints.
摘要:
A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.
摘要:
A method of producing an electrically conductive connection by laser radiation includes providing a connecting wire of a material with a higher melting temperature providing a connecting carrier of a material with a lower melting temperature, joining the connecting wire with the connecting carrier without an additional material, melting the connecting carrier with a lower melting temperature, and melting the connecting wire with a higher melting temperature on an outer surface.
摘要:
One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.
摘要:
In an ergonomic keyboard comprising at least two housing sections with separate key pads wherein the two housing sections are interconnected by a joint permitting pivoting and also tilting of the two housing sections relative to each other, the joint comprises a coil spring which extends between, and is connected to, the two housing sections at the end of the housing sections remote from an operator so as to form a universal joint between the two housing sections, and a sector-shaped indexing plate is mounted with one end firmly to one of the housing sections and extends into the other housing section so that it bridges any gap formed between the two housing sections when they are pivoted apart, and the other housing section has a guide pin projecting into a partial circular guide slot formed in the indexing plate and having a center of curvature coinciding with the universal joint pivoting center for guiding the two housing sections relative to each other.
摘要:
In a device for ascertaining the actual feed transmittted by an feed devicef an industrial sewing machine to a material to be sewn, in which the number of the threads moved across a sensor arrangement is counted and the feed is calculated from the previously detected thread density, it is provided, for obtaining an exact thread count which is as independent as possible of the orientation of the sewn web, to place ahead of the photocell (10) of the sensor arrangement a rotating slit diaphragm (7) with at least one radially extending parallel limited slit (8). Preferably a second, rotationally adjustable, but fixed slit diaphragm (5) is provided, having slits (6) opening across a set angular sector, the rotatitng slit diaphragm (7) having a larger number of slits (8). Because of this the required rpm of the slit diaphragm (7) can be reduced. To avoid errors caused by the pattern of the material it is possible to operate in the relatively longer wave infrared spectrum.
摘要:
The invention provides an arrangement for determining the speed and rotor position of an electric machine, which arrangement consists of a tachometer generator having a permanent-magnet-excited rotor and a coaxially arranged rotor position transmitter which has a rotor body equipped with permanent magnets. Around the circumference of the rotor body magnetic-field sensitive sensor elements are arranged. A compact assembly of the tachometer generator and rotor position transmitter without detrimental mutual interference is possible by the provision that first permanent magnets magnetized in the tangential direction are arranged centered to the pole gaps of the tachometer generator rotor at the rotor body in such a manner that the sides of two adjacent permanent magnets facing each other have the same polarity as the magnet pole extending between the respective pole gaps of the tachometer generator rotor. Furthermore at least one second permanent magnet magnetized in the direction of an axis of rotation is arranged on the side of the rotor body adjacent to the tachometer generator rotor, centered relative to each two first permanent magnets in such a manner that its side facing the tachometer generator rotor has the opposite polarity (N or S, respectively) as the opposite magnet pole of the tachometer generator rotor.
摘要:
A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.