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    Self-biasing transistor structure and an SRAM cell having less than six transistors
    3.
    发明申请
    Self-biasing transistor structure and an SRAM cell having less than six transistors 有权
    自偏压晶体管结构和具有小于六个晶体管的SRAM单元

    公开(公告)号：US20060022282A1

    公开(公告)日：2006-02-02

    申请号：US11045177

    申请日：2005-01-28

    申请人： Frank Wirbeleit ,  Manfred Horstmann ,  Christian Hobert

    发明人： Frank Wirbeleit ,  Manfred Horstmann ,  Christian Hobert

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/105 ,  G11C11/412 ,  H01L27/11 ,  H01L29/7838

    摘要： By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.

    摘要翻译： 通过提供自偏压半导体开关，可以实现具有减少数量的各个有源元件的SRAM单元。 在特定实施例中，自偏置半导体器件可以以双通道场效应晶体管的形式提供，其允许形成具有小于六个晶体管元件的SRAM单元，并且在优选实施例中，具有少至两个单独的晶体管 元素。

    Method of forming a semiconductor structure
    4.
    发明授权
    Method of forming a semiconductor structure 有权
    形成半导体结构的方法

    公开(公告)号：US07727827B2

    公开(公告)日：2010-06-01

    申请号：US11942400

    申请日：2007-11-19

    申请人： Frank Wirbeleit ,  Rolf Stephan ,  Manfred Horstmann

    发明人： Frank Wirbeleit ,  Rolf Stephan ,  Manfred Horstmann

    IPC分类号： H01L21/338

    CPC分类号： H01L21/28123 ,  H01L29/66545 ,  H01L29/6659

    摘要： A method of forming a semiconductor structure comprises providing a semiconductor substrate. A feature is formed over the substrate. The feature is substantially homogeneous in a lateral direction. A first ion implantation process adapted to introduce first dopant ions into at least one portion of the substrate adjacent the feature is performed. The length of the feature in the lateral direction is reduced. After the reduction of the length of the feature, a second ion implantation process adapted to introduce second dopant ions into at least one portion of the substrate adjacent the feature is performed. The feature may be a gate electrode of a field effect transistor to be formed over the semiconductor substrate.

    摘要翻译： 形成半导体结构的方法包括提供半导体衬底。 在衬底上形成特征。 该特征在横向上基本上是均匀的。 执行适于将第一掺杂剂离子引入邻近该特征的衬底的至少一部分中的第一离子注入工艺。 横向方向的特征长度减小。 在特征的长度减小之后，执行适于将第二掺杂剂离子引入邻近该特征的衬底的至少一部分中的第二离子注入工艺。 该特征可以是要形成在半导体衬底上的场效应晶体管的栅电极。

    METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
    5.
    发明申请
    METHOD OF FORMING A SEMICONDUCTOR STRUCTURE 审中-公开
    形成半导体结构的方法

    公开(公告)号：US20100203698A1

    公开(公告)日：2010-08-12

    申请号：US12763324

    申请日：2010-04-20

    申请人： Frank Wirbeleit ,  Rolf Stephan ,  Manfred Horstmann

    发明人： Frank Wirbeleit ,  Rolf Stephan ,  Manfred Horstmann

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28123 ,  H01L29/66545 ,  H01L29/6659

    摘要： A method of forming a semiconductor structure comprises providing a semiconductor substrate. A feature is formed over the substrate. The feature is substantially homogeneous in a lateral direction. A first ion implantation process adapted to introduce first dopant ions into at least one portion of the substrate adjacent the feature is performed. The length of the feature in the lateral direction is reduced. After the reduction of the length of the feature, a second ion implantation process adapted to introduce second dopant ions into at least one portion of the substrate adjacent the feature is performed. The feature may be a gate electrode of a field effect transistor to be formed over the semiconductor substrate.

    摘要翻译： 形成半导体结构的方法包括提供半导体衬底。 在衬底上形成特征。 该特征在横向方向上基本上是均匀的。 执行适于将第一掺杂剂离子引入邻近该特征的衬底的至少一部分中的第一离子注入工艺。 横向的特征长度减小。 在特征的长度减小之后，执行适于将第二掺杂剂离子引入邻近该特征的衬底的至少一部分中的第二离子注入工艺。 该特征可以是要形成在半导体衬底上的场效应晶体管的栅电极。

    Self-biasing transistor structure and an SRAM cell having less than six transistors
    6.
    发明授权
    Self-biasing transistor structure and an SRAM cell having less than six transistors 有权
    自偏压晶体管结构和具有小于六个晶体管的SRAM单元

    公开(公告)号：US07442971B2

    公开(公告)日：2008-10-28

    申请号：US11045177

    申请日：2005-01-28

    申请人： Frank Wirbeleit ,  Manfred Horstmann ,  Christian Hobert

    发明人： Frank Wirbeleit ,  Manfred Horstmann ,  Christian Hobert

    IPC分类号： H01L31/112

    CPC分类号： H01L29/105 ,  G11C11/412 ,  H01L27/11 ,  H01L29/7838

    摘要： By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.

    摘要翻译： 通过提供自偏压半导体开关，可以实现具有减少数量的各个有源元件的SRAM单元。 在特定实施例中，自偏置半导体器件可以以双通道场效应晶体管的形式提供，其允许形成具有小于六个晶体管元件的SRAM单元，并且在优选实施例中，具有少至两个单独的晶体管 元素。

    METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
    7.
    发明申请
    METHOD OF FORMING A SEMICONDUCTOR STRUCTURE 有权
    形成半导体结构的方法

    公开(公告)号：US20080242040A1

    公开(公告)日：2008-10-02

    申请号：US11942400

    申请日：2007-11-19

    申请人： Frank Wirbeleit ,  Rolf Stephan ,  Manfred Horstmann

    发明人： Frank Wirbeleit ,  Rolf Stephan ,  Manfred Horstmann

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28123 ,  H01L29/66545 ,  H01L29/6659

    摘要： A method of forming a semiconductor structure comprises providing a semiconductor substrate. A feature is formed over the substrate. The feature is substantially homogeneous in a lateral direction. A first ion implantation process adapted to introduce first dopant ions into at least one portion of the substrate adjacent the feature is performed. The length of the feature in the lateral direction is reduced. After the reduction of the length of the feature, a second ion implantation process adapted to introduce second dopant ions into at least one portion of the substrate adjacent the feature is performed. The feature may be a gate electrode of a field effect transistor to be formed over the semiconductor substrate.

    摘要翻译： 形成半导体结构的方法包括提供半导体衬底。 在衬底上形成特征。 该特征在横向上基本上是均匀的。 执行适于将第一掺杂剂离子引入邻近该特征的衬底的至少一部分中的第一离子注入工艺。 横向的特征长度减小。 在特征的长度减小之后，执行适于将第二掺杂剂离子引入邻近该特征的衬底的至少一部分中的第二离子注入工艺。 该特征可以是要形成在半导体衬底上的场效应晶体管的栅电极。

    SELF-BIASING TRANSISTOR STRUCTURE AND AN SRAM CELL HAVING LESS THAN SIX TRANSISTORS
    10.
    发明申请
    SELF-BIASING TRANSISTOR STRUCTURE AND AN SRAM CELL HAVING LESS THAN SIX TRANSISTORS 审中-公开
    自偏转晶体管结构和具有不到六个晶体管的SRAM单元

    公开(公告)号：US20090026521A1

    公开(公告)日：2009-01-29

    申请号：US12240312

    申请日：2008-09-29

    申请人： Frank Wirbeleit ,  Manfred Horstmann ,  Christian Hobert

    发明人： Frank Wirbeleit ,  Manfred Horstmann ,  Christian Hobert

    IPC分类号： H01L29/00

    CPC分类号： H01L29/105 ,  G11C11/412 ,  H01L27/11 ,  H01L29/7838

    摘要： By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.

    摘要翻译： 通过提供自偏压半导体开关，可以实现具有减少数量的各个有源元件的SRAM单元。 在特定实施例中，自偏置半导体器件可以以双通道场效应晶体管的形式提供，其允许形成具有小于六个晶体管元件的SRAM单元，并且在优选实施例中，具有少至两个单独的晶体管 元素。