利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.038 秒)

    Light sources based on semiconductor current filaments
    1.
    发明授权
    Light sources based on semiconductor current filaments 有权
    基于半导体电流灯丝的光源

    公开(公告)号：US06504859B1

    公开(公告)日：2003-01-07

    申请号：US09489243

    申请日：2000-01-21

    申请人： Fred J. Zutavern ,  Guillermo M. Loubriel ,  Malcolm T. Buttram ,  Alan Mar ,  Wesley D. Helgeson ,  Martin W. O'Malley ,  Harold P. Hjalmarson ,  Albert G. Baca ,  Weng W. Chow ,  G. Allen Vawter

    发明人： Fred J. Zutavern ,  Guillermo M. Loubriel ,  Malcolm T. Buttram ,  Alan Mar ,  Wesley D. Helgeson ,  Martin W. O'Malley ,  Harold P. Hjalmarson ,  Albert G. Baca ,  Weng W. Chow ,  G. Allen Vawter

    IPC分类号： H01S500

    CPC分类号： H01S5/04 ,  H01S5/0425 ,  H01S5/3013

    摘要： The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

    摘要翻译： 本发明提供一种能够产生高峰值功率输出而不是注入，电子束或光泵浦的新型半导体光源。 本发明能够产生高质量的相干或非相干光发射。 不同于基于p-n结的常规半导体激光器，本发明基于当前的灯丝。 本发明提供一种由当前灯丝内的电子 - 空穴等离子体形成的光源。 电子空穴等离子体可以是几百微米的直径和几厘米长。 目前的灯丝可以光学地或与电子束一起启动，但是可以在大的绝缘区域上被电泵浦。 可以在高增益光导半导体开关中产生当前的灯丝。 由本发明提供的光源具有潜在的大体积，因此具有从单个（相干）半导体激光器可获得的每脉冲潜在的大能量或峰值功率。 像其他半导体激光器一样，这些光源将发射在带隙能量附近的波长（对于GaAs 875nm或近红外线）。 本发明的即时潜在应用包括高能量，短脉冲，紧凑，低成本的激光器和其它非相干光源。

    GaAs photoconductive semiconductor switch
    3.
    发明授权
    GaAs photoconductive semiconductor switch 失效
    GaAs光导半导体开关

    公开(公告)号：US5804815A

    公开(公告)日：1998-09-08

    申请号：US675975

    申请日：1996-07-05

    申请人： Guillermo M. Loubriel ,  Albert G. Baca ,  Fred J. Zutavern

    发明人： Guillermo M. Loubriel ,  Albert G. Baca ,  Fred J. Zutavern

    IPC分类号： H01L31/08 ,  H01J40/14

    CPC分类号： H01L31/08

    摘要： A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

    摘要翻译： 在GaAs中实现的高增益光学触发光导半导体开关（PCSS）作为反向偏置引脚结构，在器件的两个电极之间的间隙中具有在本征GaAs衬底上方的钝化层。 反向偏置配置与钝化层的添加相结合大大降低了表面电流泄漏，这已经成为现有PCSS器件的一个问题，并且可以使用更便宜和更可靠的直流充电系统，而不是需要的脉冲充电系统 与先前的PCSS设备一起使用。

    Complementary junction heterostructure field-effect transistor
    4.
    发明授权
    Complementary junction heterostructure field-effect transistor 失效
    互补结异构结场场效应晶体管

    公开(公告)号：US5479033A

    公开(公告)日：1995-12-26

    申请号：US250088

    申请日：1994-05-27

    申请人： Albert G. Baca ,  Timothy J. Drummond ,  Perry J. Robertson ,  Thomas E. Zipperian

    发明人： Albert G. Baca ,  Timothy J. Drummond ,  Perry J. Robertson ,  Thomas E. Zipperian

    IPC分类号： H01L27/06 ,  H01L29/80 ,  H01L31/0376 ,  H01L31/072

    CPC分类号： H01L27/0605 ,  H01L29/802

    摘要： A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

    摘要翻译： 公开了一对互补的化合物半导体结异质结场场效应晶体管及其制造方法。 p沟道结异质结场场效应晶体管使用应变层来分离价带的简并性，大大提高了空穴迁移率和速度。 去除应变层后，n通道器件由兼容的工艺形成。 以这种方式，可以独立优化两种类型的晶体管。 离子注入用于形成两种类型的互补器件的晶体管有源和隔离区域。 本发明用于开发低功率，高速数字集成电路。

    Npn double heterostructure bipolar transistor with ingaasn base region
    5.
    发明授权
    Npn double heterostructure bipolar transistor with ingaasn base region 有权
    Npn双异质结双极晶体管，具有基极区

    公开(公告)号：US06765242B1

    公开(公告)日：2004-07-20

    申请号：US09547152

    申请日：2000-04-11

    申请人： Ping-Chih Chang ,  Albert G. Baca ,  Nein-Yi Li ,  Hong Q. Hou ,  Carol I. H. Ashby

    发明人： Ping-Chih Chang ,  Albert G. Baca ,  Nein-Yi Li ,  Hong Q. Hou ,  Carol I. H. Ashby

    IPC分类号： H01L31072

    CPC分类号： H01L29/66318 ,  H01L29/2003 ,  H01L29/7371

    摘要： An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, Von, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

    摘要翻译： 公开了一种NPN双异质结双极晶体管（DHBT），其具有包含夹在n型掺杂集电极和发射极区之间的p型掺杂的砷化镓镓（InGaAsN）层的基极区。 使用InGaAsN作为基极区域会降低晶体管导通电压Von，从而降低器件内的功耗。 具有用于形成低功率电子电路的应用的NPN晶体管形成在砷化镓（GaAs）衬底上，并且可以在商业GaAs铸造厂制造。 还公开了制造NPN晶体管的方法。

    Method for dry etching of transition metals
    6.
    发明授权
    Method for dry etching of transition metals 失效
    过渡金属的干蚀刻方法

    公开(公告)号：US5814238A

    公开(公告)日：1998-09-29

    申请号：US542149

    申请日：1995-10-12

    申请人： Carol I. H. Ashby ,  Albert G. Baca ,  Peter Esherick ,  John E. Parmeter ,  Dennis J. Rieger ,  Randy J. Shul

    发明人： Carol I. H. Ashby ,  Albert G. Baca ,  Peter Esherick ,  John E. Parmeter ,  Dennis J. Rieger ,  Randy J. Shul

    IPC分类号： C23F4/00 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

    CPC分类号： C23F4/00 ,  H01L21/32136

    摘要： A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

    摘要翻译： 一种干法蚀刻过渡金属的方法。 过渡金属（或过渡金属合金如硅化物）在基板上的干蚀刻方法包括在过渡金属附近提供至少一种含氮或磷的pi受体配体，并蚀刻过渡金属 以形成挥发性过渡金属/π-受体配体复合物。 干蚀刻可以在诸如反应离子蚀刻（RIE）系统，下游等离子体蚀刻系统（等离子体余辉），化学辅助离子束蚀刻（CAIBE）系统等等的等离子体蚀刻系统中进行。 干蚀刻也可以通过直接从配体源气体（例如由一氧化氮产生的亚硝酰基配体）或与激发的粒子例如光子，电子，离子，原子或分子的接触产生直接受体配体来进行。 在本发明的一些优选实施方案中，中间反应物种如羰基或卤化物配体用于与过渡金属的初始化学反应，其中中间反应物种至少部分被pi受体配体替代 形成挥发性过渡金属/π-受体配体复合物。

    Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance
    7.
    发明授权
    Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance 失效
    具有改善的直流和高频性能的化合物半导体场效应晶体管的制造方法

    公开(公告)号：US6083781A

    公开(公告)日：2000-07-04

    申请号：US941264

    申请日：1997-10-01

    申请人： John C. Zolper ,  Marc E. Sherwin ,  Albert G. Baca

    发明人： John C. Zolper ,  Marc E. Sherwin ,  Albert G. Baca

    IPC分类号： H01L21/265 ,  H01L21/338

    CPC分类号： H01L29/66863 ,  H01L21/26546

    摘要： A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

    摘要翻译： 公开了一种用于制造包括使用p型掺杂剂的化合物半导体器件的方法，其中在形成n沟道时，掺杂剂与n型供体物质共注入，然后在中等温度下进行单次退火 执行。 还公开了使用该方法制造的装置。 在优选实施例中，使用在GaAs中共同注入Si原子的C离子来制造n-MESFET和其它类似的场效应晶体管器件，以形成n沟道。 C在本发明的上下文中表现出独特的特征，因为它表现出作为p型掺杂剂的低活化效率（通常为50％或更少），因此，其作用是通过补偿Si供体来锐化Si n通道 在Si通道尾部的区域中，但是对掩埋p区的受主浓度没有显着贡献。 结果，本发明提供了具有增强的直流和高频性能的改进的场效应半导体和相关器件。