公开(公告)号：US11674239B2

公开(公告)日：2023-06-13

申请号：US17183753

申请日：2021-02-24

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY ,  Novel Crystal Technology, Inc.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Yoshio Otsuka ,  Toshinori Taishi

IPC: C30B35/00 ,  C30B11/00

CPC classification number: C30B35/002 ,  C30B11/002 ,  C30B11/003 ,  C30B11/006

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

公开(公告)号：US11674238B2

公开(公告)日：2023-06-13

申请号：US17158652

申请日：2021-01-26

Applicant: Fujikoshi Machinery Corp.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Yoshio Otsuka

IPC: C30B35/00 ,  C30B29/16

CPC classification number: C30B35/002 ,  C30B29/16

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

公开(公告)号：US10570528B2

公开(公告)日：2020-02-25

申请号：US15470547

申请日：2017-03-27

Applicant: SHINSHU UNIVERSITY ,  Fujikoshi Machinery Corp.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Etsuko Ohba ,  Jun Yanagisawa

IPC: C30B11/00 ,  C30B29/16 ,  H01L21/02

Abstract: The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

公开(公告)号：US20180251908A1

公开(公告)日：2018-09-06

申请号：US15866952

申请日：2018-01-10

Applicant: Fujikoshi Machinery Corp. ,  Shinshu University

Inventor： Keigo HOSHIKAWA ,  Yasuyuki Fujiwara ,  Keiichi Kohama ,  Shinji Nakanishi ,  Takumi Kobayashi ,  Etsuko Ohba

IPC: C30B11/00 ,  C30B29/16 ,  C30B29/30 ,  C22C5/04

CPC classification number: C30B11/002 ,  C22C5/04 ,  C30B11/003 ,  C30B29/16 ,  C30B29/30

Abstract: To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

公开(公告)号：US12258674B2

公开(公告)日：2025-03-25

申请号：US18077455

申请日：2022-12-08

Applicant: SHINSHU UNIVERSITY ,  Fujikoshi Machinery Corp.

Inventor： Keigo Hoshikawa ,  Toshinori Taishi ,  Takumi Kobayashi

IPC: C30B29/16 ,  C30B11/00 ,  C30B35/00

Abstract: A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.

公开(公告)号：US11795568B2

公开(公告)日：2023-10-24

申请号：US17555680

申请日：2021-12-20

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY

Inventor： Keigo Hoshikawa ,  Toshinori Taishi ,  Takumi Kobayashi ,  Yoshio Otsuka ,  Etsuko Ohba

IPC: C30B11/00 ,  C30B29/16

CPC classification number: C30B11/003 ,  C30B29/16

Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

公开(公告)号：US10280530B2

公开(公告)日：2019-05-07

申请号：US15866952

申请日：2018-01-10

Applicant: FUJIKOSHI MACHINERY CORP. ,  SHINSHU UNIVERSITY

Inventor： Keigo Hoshikawa ,  Yasuyuki Fujiwara ,  Keiichi Kohama ,  Shinji Nakanishi ,  Takumi Kobayashi ,  Etsuko Ohba

IPC: C30B11/00 ,  C22C5/04 ,  C30B29/30 ,  C30B29/16

Abstract: To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.