公开(公告)号：US09017146B2

公开(公告)日：2015-04-28

申请号：US14096226

申请日：2013-12-04

Applicant: Fujikoshi Machinery Corp. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Yoshio Nakamura ,  Yoshio Otsuka ,  Takashi Okubo ,  Kazutaka Shibuya ,  Takayuki Fuse ,  Shiro Hara ,  Sommawan Khumpuang ,  Shinichi Ikeda

IPC: B24B37/34 ,  B24B7/22 ,  B24B37/16 ,  B24B53/017 ,  B24B37/10 ,  B24B37/26 ,  B24B37/30

CPC classification number: B24B7/228 ,  B24B37/105 ,  B24B37/16 ,  B24B37/26 ,  B24B37/30 ,  B24B37/345 ,  B24B53/017

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract translation: 晶片抛光装置包括抛光板，能够保持晶片的抛光头和浆料供应部分。 抛光板包括：多个同心抛光区，每个同心抛光区具有用于抛光晶片的规定宽度，并且其中每个抛光区附着有抛光布; 以及用于在抛光区之间形成的用于排出浆料的槽。 清洗抛光头的清洁部分或清洁抛光晶片的晶片清洁部分设置在抛光板的中心部分并位于最内侧抛光区的内侧。

公开(公告)号：US11674239B2

公开(公告)日：2023-06-13

申请号：US17183753

申请日：2021-02-24

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY ,  Novel Crystal Technology, Inc.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Yoshio Otsuka ,  Toshinori Taishi

IPC: C30B35/00 ,  C30B11/00

CPC classification number: C30B35/002 ,  C30B11/002 ,  C30B11/003 ,  C30B11/006

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

公开(公告)号：US11674238B2

公开(公告)日：2023-06-13

申请号：US17158652

申请日：2021-01-26

Applicant: Fujikoshi Machinery Corp.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Yoshio Otsuka

IPC: C30B35/00 ,  C30B29/16

CPC classification number: C30B35/002 ,  C30B29/16

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

公开(公告)号：US11795568B2

公开(公告)日：2023-10-24

申请号：US17555680

申请日：2021-12-20

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY

Inventor： Keigo Hoshikawa ,  Toshinori Taishi ,  Takumi Kobayashi ,  Yoshio Otsuka ,  Etsuko Ohba

IPC: C30B11/00 ,  C30B29/16

CPC classification number: C30B11/003 ,  C30B29/16

Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.