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公开(公告)号:US20220325140A1
公开(公告)日:2022-10-13
申请号:US17707003
申请日:2022-03-29
Applicant: Fujimi Incorporated
Inventor: Tsutomu YOSHINO , Yoshihiro IZAWA , Yasuto ISHIDA
IPC: C09G1/16 , H01L21/306
Abstract: Provided is a means capable of sufficiently removing residues remaining on a surface of a polished object. Provided is a composition for surface treatment for use in reducing a residue on a surface of a polished object, containing a solvent and a water-soluble polymer, wherein an adsorption amount of the water-soluble polymer adsorbed to a quartz crystal microbalance electrode is 100 ng/cm2 or more and 600 ng/cm2 or less per unit area of the quartz crystal microbalance electrode.
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公开(公告)号:US20160288289A1
公开(公告)日:2016-10-06
申请号:US15022376
申请日:2014-08-11
Applicant: FUJIMI INCORPORATED
Inventor: Shota SUZUKI , Yoshihiro IZAWA
CPC classification number: B24B37/044 , B24B37/00 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: The present invention is the invention of a polishing composition comprising a silica in which a functional group satisfying at least one of condition (1) and condition (2) described below is fixed on the surface, and a pH-adjusting agent; condition (1): the functional group has an amino group; and condition (2): the functional group has a halogeno group, and the polishing composition of the invention can sufficiently control a polishing rate of a Si-containing material.
Abstract translation: 本发明是一种包含二氧化硅的抛光组合物的发明,其中满足下述条件(1)和条件(2)中的至少一个的官能团固定在表面上,以及pH调节剂; 条件(1):官能团具有氨基; 和条件(2):官能团具有卤代基,本发明的研磨用组合物能够充分地控制含Si材料的研磨速度。
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公开(公告)号:US20190300751A1
公开(公告)日:2019-10-03
申请号:US16317448
申请日:2017-06-12
Applicant: FUJIMI INCORPORATED
Inventor: Yoshihiro IZAWA , Shota SUZUKI
IPC: C09G1/02
Abstract: The present invention provides a method for producing a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects).The present invention is a method for producing a polishing composition, the method including: preparing silica in which an intensity of a peak of a silica four-membered ring structure and an intensity of a peak derived from a silica random network structure when analyzed by Raman spectroscopy satisfy a predetermined requirement; and mixing the silica with a dispersing medium.
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公开(公告)号:US20190085210A1
公开(公告)日:2019-03-21
申请号:US16133186
申请日:2018-09-17
Applicant: FUJIMI INCORPORATED
Inventor: Yoshihiro IZAWA
Abstract: A method for producing a polishing composition including: preparing a first dispersion liquid by mixing a dispersing element containing abrasive grains and a dispersing medium with a pH adjusting agent, and changing the pH of the dispersing element so as to pass an isoelectric point of the abrasive grains; and preparing a second dispersion liquid by mixing the first dispersion liquid with an electrical conductivity adjusting agent.
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公开(公告)号:US20220415669A1
公开(公告)日:2022-12-29
申请号:US17902507
申请日:2022-09-02
Applicant: FUJIMI INCORPORATED
Inventor: Yoshihiro IZAWA , Kenta IDE
IPC: H01L21/321 , C09G1/02 , C09G1/16 , H01L21/3105 , C09K3/14
Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.
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公开(公告)号:US20220064486A1
公开(公告)日:2022-03-03
申请号:US17407435
申请日:2021-08-20
Applicant: FUJIMI INCORPORATED
Inventor: Yoshihiro IZAWA
IPC: C09G1/02 , H01L21/304
Abstract: An object of the present invention is to provide a means for reducing the surface roughness (Ra) and suppressing occurrence of scratches while maintaining a high polishing rate in polishing an object to be polished containing a resin. Provided is a polishing composition including particulate alumina and a dispersing medium, in which an α conversion rate of the particulate alumina is 50% or more, and a sphericity of the particulate alumina is 80% or more.
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7.
公开(公告)号:US20190292407A1
公开(公告)日:2019-09-26
申请号:US16317625
申请日:2017-06-12
Applicant: FUJIMI INCORPORATED
Inventor: Shota SUZUKI , Yoshihiro IZAWA
IPC: C09G1/02 , B24B37/04 , C09K3/14 , H01L21/3105 , H01L21/306 , H01L21/321
Abstract: The present invention provides a polishing composition which polishes an object to be polished at a high polishing speed and with less scratches (defects).The present invention is a polishing composition including silica having a maximum peak temperature of 30° C. or higher and 53° C. or lower in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower, and having a pH at 25° C. of less than 6.0.
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8.
公开(公告)号:US20190256742A1
公开(公告)日:2019-08-22
申请号:US16317383
申请日:2017-06-12
Applicant: FUJIMI INCORPORATED
Inventor: Shota SUZUKI , Yoshihiro IZAWA , Naoyuki ISHIHARA
Abstract: The present invention provides a polishing composition that can polish an object to be polished at a high polishing speed with fewer scratches (defects). The present invention relates to a polishing composition including silica and a dispersing medium, the polishing composition having, when analyzed by pulse NMR spectroscopy, a specific relaxation rate (R2sp) of from 1.60 to 4.20 as determined by the following Formula (1): R2sp=(R(silica))/(R(medium))−1 Formula (1): wherein R(silica) represents the reciprocal of the relaxation time of silica (unit:/millisecond), and R(medium) represents the reciprocal of the relaxation time of the dispersing medium (unit:/millisecond).
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9.
公开(公告)号:US20190225836A1
公开(公告)日:2019-07-25
申请号:US16316970
申请日:2017-06-12
Applicant: FUJIMI INCORPORATED
Inventor: Shota SUZUKI , Yoshihiro IZAWA
IPC: C09G1/02 , C09K3/14 , H01L21/3105
Abstract: The present invention provides a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a polishing composition containing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower is −0.011 or more and less than 0, a pH at 25° C. of the polishing composition being less than 6.0.
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公开(公告)号:US20190080927A1
公开(公告)日:2019-03-14
申请号:US16123632
申请日:2018-09-06
Applicant: FUJIMI INCORPORATED
Inventor: Yoshihiro IZAWA , Kenta IDE
IPC: H01L21/321 , C09G1/16 , C09K3/14
Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.
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