摘要:
The present invention intends to propose an image pickup apparatus in which a plurality of camera head units can be easily installed at places close to each other. This image pickup apparatus includes a television camera system 10, in which video result of an external device 12 can also be transmitted through a single cable 16 which connects a camera control unit 13 and a camera head unit 15.
摘要:
It is intended to enable main image data from a video camera and background image data recorded on a recording medium to be chromakey-combined with each other naturally at a low cost. When a video switcher chromakey-combines main image data that is produced by imaging with a video camera with background image data that is reproduced from a magnetic tape by a VTR, the main image data is chromakey-combined with the background image data such that the VTR is caused to perform a reproducing operation on the magnetic tape based on time codes that are stored in a control device as one of a pair of information and the operations of the video camera and a video camera stage are controlled based on camera control information as the other of the pair of information.
摘要:
It is intended to provide an exhaust gas treatment system, which allows for VOC removal at lower temperatures and thereby improves the durability of catalysts and suppresses carbon monoxide generation at the final outlet of the system. The present invention provides a treatment system of an exhaust gas containing a nitrogen oxide, carbon monoxide, and a volatile organic compound comprising: an exhaust gas treatment means for removing the nitrogen oxide by reduction with ammonia and partially oxidizing the VOC to CO; and a CO/VOC removal means for oxidizing the CO and partially unreacted VOC, in this order from the upstream flow of the exhaust gas.
摘要:
To provide a long-life refractory capable of maintaining durability under severe conditions. The castable refractory comprises a mixture containing at least one of 2 to 10 mass % of silicon carbide and 3 to 10 mass % of chamotte, as an auxiliary raw material, and a binder material, with the remaining balance being one or more main raw materials selected from corundum, mullite, bauxite, chamotte, talc and silica, and is used in an environment exposed to an alkali component-containing hot gas atmosphere. In an alkali component-containing gas atmosphere at a high temperature (750° C. or more), silicon carbide and/or chamotte are vitrified to a thickness of 1 mm or less in the surface layer of the refractory to prevent the alkali component-containing gas from intruding inside of the refractory.
摘要:
A rotary encoder includes two first detection units disposed at positions that are symmetrical about a rotation axis, each of the first detection units outputting an incremental signal, and second detection unit that outputs an absolute signal φA. The rotary encoder includes a storage unit that stores a plurality of formulas for correcting errors of the incremental signals, the formulas being different from each other in accordance with the signal φA, and the errors being generated due to eccentricity; a calculation unit that calculates a corrected phase φI by performing operation on the incremental signals by using one of the formulas corresponding to the signal φA; and a generation unit that generates a rotation angle of the scale on the basis of the phase φI and the signal φA.
摘要:
A refill for a correction pen is constructed of a molded article of a polyamide resin obtained from monomers having an aromatic ring or a naphthene ring, a molded article of a blend of two or more kinds of polyamide resins, or a molded article having a multi-layered structure of two or more layers whose innermost layer in contact with the correction fluid is constituted of a polyamide resin. The applying part of a refill unit mounted on a ballpoint type applicator having a pressurizing mechanism in linkage with clicking action is formed by press fitting the rear end of a ballpoint pen tip having a rotatable ball to the attachment portion at the front end of an ink reservoir and a metal tube is squeezed to cover the outer periphery of the attachment portion at the front end of the ink reservoir to which the tip is fitted.
摘要:
An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layers and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.
摘要:
The present invention provides an adapter device adapted for easier operation of a lid that opens and closes an opening through which a video camera is to be inserted and on which a viewfinder is to be installed. The present invention provides an adapter device to which a video camera device is to be attached, the adapter device including an adapter body having formed therein a receptacle in which the video camera device is to be installed and having formed at the rear end thereof an opening through which the video camera device is to be inserted first at a lens-unit mount thereof, a lid provided pivotably on a vertical pivot of the adapter body to open and close the insertion opening, and a mount base provided on the top of the lid on which a viewfinder is to be installed.
摘要:
An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.