公开(公告)号：US20020034055A1

公开(公告)日：2002-03-21

申请号：US09820047

申请日：2001-03-28

Applicant: FUJITSU LIMITED

Inventor： Yoshihiko Seyama ,  Atsushi Tanaka ,  Keiichi Nagasaka ,  Yutaka Shimizu ,  Shin Eguchi ,  Hitoshi Kanai ,  Reiko Kondo ,  Hitoshi Kishi ,  Junya Ikeda

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3295

Abstract: Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

Abstract translation: 本文公开了一种自旋阀磁阻传感器，其包括第一导体层，设置在第一导体层上的自由铁磁层，设置在自由铁磁层上的非磁性中间层，设置在非磁性中间层上的钉扎铁磁层，反铁磁层 设置在被钉扎的铁磁层上，以及设置在反铁磁层上的第二导体层。 自由铁磁层和被钉扎的铁磁层中的至少一个具有大于在通过至少一个层的面内方向的电流的情况下提供最大电阻变化率或电阻变化量的厚度的厚度。 也就是说，自由铁磁层和被钉扎铁磁层中的至少一个的厚度落在3nm至12nm的范围内。

公开(公告)号：US20020163766A1

公开(公告)日：2002-11-07

申请号：US10027651

申请日：2001-12-20

Applicant: FUJITSU LIMITED

Inventor： Shin Eguchi ,  Chikayoshi Kamata ,  Junya Ikeda ,  Atsushi Tanaka

IPC: G11B005/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/012 ,  G11B5/3903 ,  H01F10/3254 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

Abstract: The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough. The Barkhausen noise can be reduced.

Abstract translation: 磁阻膜的上部位于电流垂直于平面结构的磁阻元件中的记录轨道的横向方向上的绝缘体之间。 磁畴层控制磁性层与绝缘体沿横向夹着磁阻膜的上部。 绝缘体用于在磁阻膜的下部和上电极层之间建立较窄的电流路径。 因此，可以在磁阻膜中减小横向上的实质宽度。 此外，在畴控制磁性层之间建立的纵向偏置磁场有效地作用在磁阻膜上。 特别地，如果在磁阻膜的上部包含自由磁性层，则可以对自由磁性层进行较大的纵向偏置磁场。 可以在自由铁磁层中实现单一畴性。 巴克豪森噪音可以减少。

公开(公告)号：US20030145453A1

公开(公告)日：2003-08-07

申请号：US10281826

申请日：2002-10-28

Applicant: FUJITSU LIMITED

Inventor： Chikayoshi Kamata ,  Shin Eguchi ,  Atsushi Tanaka ,  Tooru Fukuya

IPC: G11B005/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F41/308 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: The lower electrode is at least exposed at the surface of a substructure layer in a current-perpendicular-to-the-plane structure magnetoresistive element. A resist is formed to extend over the surface of the substructure layer. A patterning void is defined in the resist. The shape of the patterning void is designed to correspond to the contour of the magnetoresistive multilayered film. The magnetoresistive multilayered film is formed by deposition within the patterning void. This method enables avoidance of a dry etching process effected on the magnetoresistive multilayered film. Scrapings or waste of the magnetoresistive multilayered film are not generated at all. The side surfaces of the magnetoresistive multilayered film are completely prevented from attachment or adhesion of scrapings or waste. The side surfaces of the magnetoresistive multilayered film are kept stainless.

Abstract translation: 下电极至少暴露在电流垂直于平面结构的磁阻元件中的子结构层的表面处。 形成抗蚀剂以延伸到子结构层的表面上。 在抗蚀剂中定义图案化空隙。 图形化空穴的形状被设计成对应于磁阻多层膜的轮廓。 磁阻多层膜通过在图案化空隙内沉积而形成。 该方法能够避免对磁阻多层膜产生的干蚀刻工艺。 完全不产生磁阻多层膜的刮除或废弃。 完全防止磁阻多层膜的侧表面附着​​或粘附刮屑或废料。 磁阻多层膜的侧表面保持不锈钢。

公开(公告)号：US20020060659A1

公开(公告)日：2002-05-23

申请号：US09995569

申请日：2001-11-29

Applicant: Fujitsu Limited

Inventor： Takahiro Matsuda ,  Shin Eguchi ,  Yoshihiro Mizuno ,  Masato Nakashima ,  Manabu Ishimoto ,  Hirokazu Aritake ,  Noriko Sato

IPC: G09G003/36

CPC classification number: G06K7/10663 ,  G02B5/1828 ,  G02B27/2228 ,  G02F1/292 ,  G06K7/10594 ,  G06K2207/1015

Abstract: An apparatus for deflecting light of the present invention comprises: (a) at least one pair of transference electrodes arranged facing one another; (b) a drive circuit which applies a voltage among the transference electrodes; and (c) a liquid crystal which is inserted among the transference electrodes, and whose parallel stripes that function as a diffraction grating when the voltage is applied among the transference electrodes are produced at a pitch corresponding to the applied voltage. The light can be scanned if a diffracted light by the apparatus for deflecting light is converted into a scanning light and a voltage value is changed temporally to apply the voltage among the transference electrodes. In a device for reading information, the scanning light is reflected in a bar code and the reflected light is detected by an apparatus for detecting light. In a device for stereoscopic display of the present invention, the apparatus for deflecting light is used as beam deflection means for deflecting the light beamed from a picture element which organizes the pictures of the picture display means.

公开(公告)号：US20030035251A1

公开(公告)日：2003-02-20

申请号：US10107084

申请日：2002-03-27

Applicant: FUJITSU LIMITED

Inventor： Hiroshi Asida ,  Shin Eguchi ,  Atsushi Tanaka ,  Reiko Kondo ,  Yutaka Shimizu

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49046

Abstract: A magnetoresistive head including a first magnetic shield, a first electrode terminal provided on the first magnetic shield and having a first width, and a magnetoresistive film provided on the first electrode terminal and having a second width less than or equal to the first width. The magnetoresistive head further includes a second electrode terminal provided on the magnetoresistive film and having a third width less than or equal to the second width, and a second magnetic shield provided on the second electrode terminal. Preferably, the magnetoresistive head further includes a plug electrode for connecting the second electrode terminal to the second magnetic shield, and a plug side wall protective insulating film for covering a side wall of the plug electrode.

Abstract translation: 一种磁阻头，包括第一磁屏蔽，设置在第一磁屏蔽上并具有第一宽度的第一电极端子和设置在第一电极端子上并具有小于或等于第一宽度的第二宽度的磁阻膜。 磁阻头还包括设置在磁阻膜上并具有小于或等于第二宽度的第三宽度的第二电极端子和设置在第二电极端子上的第二磁屏蔽。 优选地，磁阻头还包括用于将第二电极端子连接到第二磁屏蔽的插头电极和用于覆盖插头电极的侧壁的插头侧壁保护绝缘膜。

公开(公告)号：US20010015878A1

公开(公告)日：2001-08-23

申请号：US09758701

申请日：2001-01-11

Applicant: FUJITSU LIMITED

Inventor： Lajos Varga ,  Yutaka Shimizu ,  Shin Eguchi ,  Atsushi Tanaka

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3295

Abstract: A magnetic sensor which includes a laminate comprising a first magnetic layer of soft ferromagnetic material, a nonmagnetic layer, a second magnetic layer of ferromagnetic material, and an antiferromagnetic layer, and a converting element for detecting the change in external magnetic field as the change in resistance and outputing it, with at least part of the first magnetic layer being formed of an NinullFe material, and the content of Ni, xNi, in wt % and the thickness, t, in nanometer thereof satisfying the relation represented by the following equation: 1 x N1 null - B 1 Surf + B 1 Bulk null t B 2 Surf + B 2 Bulk null t wherein BBulk1nullnull53.78 J/cm3, BBulk2null0.6638 J/cm3, BSurf1null1.7548null10null6 J/cm2, and BSurf2nullnull2.432null10null8 J/cm2. A magnetic storage comprising a magnetic head and a magnetic recording medium, wherein the magnetic head uses the magnetic sensor according to the invention, is also disclosed.