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公开(公告)号：US08080831B2
公开(公告)日：2011-12-20
申请号：US12784560
申请日：2010-05-21
IPC分类号： H01L21/02
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。
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公开(公告)号：US20090108371A1
公开(公告)日：2009-04-30
申请号：US12341330
申请日：2008-12-22
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。
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公开(公告)号：US20060261442A1
公开(公告)日：2006-11-23
申请号：US11493829
申请日：2006-07-27
IPC分类号： H01L29/00
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device includes a transmission power amplifier having cascaded MOSFET amplification stages disposed over a main surface of a semiconductor substrate. A CMOSFET control circuit controls the amplification stages. A first capacitor is also provided having upper and lower metal film electrodes formed over the main surface of the semiconductor substrate. The amplification stages are electrically coupled to one another via an inter-stage matching circuit which includes the first capacitor.
摘要翻译： 半导体器件包括具有设置在半导体衬底的主表面上的级联MOSFET放大级的发射功率放大器。 CMOSFET控制电路控制放大级。 还提供了第一电容器，其具有形成在半导体衬底的主表面上的上金属膜电极和下金属膜电极。 放大级通过包括第一电容器的级间匹配电路彼此电耦合。
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公开(公告)号：US20070194407A1
公开(公告)日：2007-08-23
申请号：US11783779
申请日：2007-04-12
IPC分类号： H01L29/00
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。
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公开(公告)号：US20110127594A1
公开(公告)日：2011-06-02
申请号：US12784560
申请日：2010-05-21
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。
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6.发明授权Multilayered semiconductor structure containing a MISFET, a resistor, a capacitor, and an inductor 有权包含MISFET，电阻器，电容器和电感器的多层半导体结构公开(公告)号：US07479681B2
公开(公告)日：2009-01-20
申请号：US11783779
申请日：2007-04-12
IPC分类号： H01L23/62
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
摘要翻译： 一种半导体器件，包括形成在基板的主表面的阱中的MISFET，形成在基板的主表面处的第二MISFET以及形成在基板的主表面上并具有两个端子的无源元件。 导电膜形成在半导体衬底的背面。 导电膜与固定电位连接，并与导电膜电连接。
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7.发明授权Semiconductor device including multiple wiring layers and circuits operating in different frequency bands 有权半导体器件包括在不同频带中工作的多个布线层和电路公开(公告)号：US07087977B2
公开(公告)日：2006-08-08
申请号：US10670258
申请日：2003-09-26
IPC分类号： H01L29/00
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.
摘要翻译： 通过在基板上形成来自一个相同的多晶硅膜的电容器元件的电阻元件和下电极来提供在一个芯片中形成高频器件的多个元件; 从与其他多晶硅膜不同的相同多晶硅膜形成功率MISFET的栅电极，电容器元件的上电极，n沟道型MISFET的栅电极和p沟道型MISFET的栅电极，以及 WSi电影; 形成电容器元件，其具有形成在沉积在所述基板上的氧化硅膜上的布线作为下电极，以及在所述区域MIN中形成在所述氧化硅膜上的布线作为所述上电极; 使用与沉积在氧化硅膜上的铝合金膜相同的铝合金膜在区域IND中形成螺旋线圈; 以及在区域PAD中形成接合焊盘。
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公开(公告)号：US20050098851A1
公开(公告)日：2005-05-12
申请号：US10670258
申请日：2003-09-26
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and above and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.
摘要翻译： 通过在基板上形成来自一个相同的多晶硅膜的电容器元件的电阻元件和下电极来提供在一个芯片中形成高频器件的多个元件; 形成功率MISFET的栅电极，电容器元件的上电极，n沟道型MISFET的栅电极和p沟道型MISFET的栅极与不同于另一多晶硅膜的上述相同的多晶硅膜以上 和WSi电影; 形成电容器元件，其具有形成在沉积在所述基板上的氧化硅膜上的布线作为下电极，以及在所述区域MIN中形成在所述氧化硅膜上的布线作为所述上电极; 使用与沉积在氧化硅膜上的铝合金膜相同的铝合金膜在区域IND中形成螺旋线圈; 以及在区域PAD中形成接合焊盘。
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公开(公告)号：US07741656B2
公开(公告)日：2010-06-22
申请号：US12644968
申请日：2009-12-22
IPC分类号： H01L29/76
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
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公开(公告)号：US20100097156A1
公开(公告)日：2010-04-22
申请号：US12644968
申请日：2009-12-22
CPC分类号： H01L21/823814 , H01L21/26586 , H01L23/3677 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0629 , H01L27/0805 , H01L27/0922 , H01L28/20 , H01L28/40 , H01L29/0638 , H01L29/0696 , H01L29/1045 , H01L29/1083 , H01L29/4238 , H01L29/456 , H01L29/4975 , H01L29/66659 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/13091 , H01L2924/30107 , H03F3/193 , H01L2924/00
摘要： A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
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