公开(公告)号：US20140175454A1

公开(公告)日：2014-06-26

申请号：US14105569

申请日：2013-12-13

Applicant: GAN SYSTEMS INC.

Inventor： John ROBERTS ,  Greg KLOWAK

IPC: H01L25/18

CPC classification number: H03K17/687 ,  H01F19/08 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/645 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/0557 ,  H01L2224/06051 ,  H01L2224/06131 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12035 ,  H01L2924/1204 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Devices and systems comprising driver circuits are disclosed for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement to a high voltage GaN HEMT, for improved control of noise and voltage transients. Co-packaging of a GaN transistor die and a CMOS driver die using island topology contacts, through substrate vias, and a flip-chip, stacked configuration provides interconnections with low inductance and resistance, and provides effective thermal management. Co-packaging of a CMOS input interface circuit with the CMOS driver and GaN transistor allows for a compact, integrated CMOS driver with enhanced functionality including shut-down and start-up conditioning for safer operation, particularly for high voltage and high current switching. Preferred embodiments also provide isolated, self-powered, high speed driver devices, with reduced input losses.

Abstract translation: 公开了包括驱动电路的器件和系统，用于MOSFET驱动的常规氮化镓（GaN）功率晶体管。 优选地，具有集成的低电压横向MOSFET驱动器的低功率高速CMOS驱动器电路以混合共源共栅布置串联耦合到高电压GaN HEMT，用于改善噪声和电压瞬变的控制。 使用岛拓扑触点，通过衬底通孔和倒装芯片堆叠配置来共同封装GaN晶体管管芯和CMOS驱动器管芯，提供低电感和电阻的互连，并提供有效的热管理。 CMOS输入接口电路与CMOS驱动器和GaN晶体管的共同封装允许具有增强功能的紧凑集成CMOS驱动器，包括关闭和启动调节，以实现更安全的操作，特别是对于高电压和高电流切换。 优选实施例还提供具有减小的输入损耗的隔离，自供电的高速驱动器件。