公开(公告)号：US20080145998A1

公开(公告)日：2008-06-19

申请号：US11531493

申请日：2006-09-13

申请人： GERARDO A. DELGADINO ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

发明人： GERARDO A. DELGADINO ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC分类号： H01L21/76

CPC分类号： H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

摘要翻译： 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔是 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US07435685B2

公开(公告)日：2008-10-14

申请号：US11531493

申请日：2006-09-13

申请人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

发明人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC分类号： H01L21/311

CPC分类号： H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

摘要翻译： 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US07132369B2

公开(公告)日：2006-11-07

申请号：US10745344

申请日：2003-12-22

申请人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

发明人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC分类号： H01L21/302

CPC分类号： H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

摘要翻译： 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US07256134B2

公开(公告)日：2007-08-14

申请号：US10632873

申请日：2003-08-01

申请人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

发明人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  Y10S438/963

摘要： The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.

摘要翻译： 本发明包括使用等离子体蚀刻室中的气体混合物的等离子体来选择性地蚀刻形成在衬底上的低k电介质材料的方法。 气体混合物包括富氟碳氟化合物或氢氟烃气体，含氮气体和一种或多种添加剂气体，例如富氢氢氟烃气体，惰性气体和/或碳 - 氧气体。 该方法提供了大于约5:1的光致抗蚀剂掩模蚀刻选择比的低k电介质，大于10:1的低k电介质到阻挡层/衬层蚀刻选择比，以及低k电介质蚀刻速率 高于约4000Å/ min。

公开(公告)号：US20050026430A1

公开(公告)日：2005-02-03

申请号：US10632873

申请日：2003-08-01

申请人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

发明人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  Y10S438/963

摘要： The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.

摘要翻译： 本发明包括使用等离子体蚀刻室中的气体混合物的等离子体来选择性地蚀刻在衬底上形成的低k电介质材料的方法。 气体混合物包括富氟碳氟化合物或氢氟烃气体，含氮气体和一种或多种添加剂气体，例如富氢氢氟烃气体，惰性气体和/或碳 - 氧气体。 该方法提供了大于约5:1的光致抗蚀剂掩模蚀刻选择比的低k电介质，大于10:1的低k电介质到阻挡层/衬层蚀刻选择比，以及低k电介质蚀刻速率 高于约4000Å/ min。

公开(公告)号：US08422216B2

公开(公告)日：2013-04-16

申请号：US12960353

申请日：2010-12-03

申请人： Zhi-Chun Liang ,  Fang Tian

发明人： Zhi-Chun Liang ,  Fang Tian

IPC分类号： G06F1/16

CPC分类号： G06F1/183

摘要： A memory holding apparatus includes a main pole and an inserting pole. The main pole includes a main portion and a first holding portion perpendicularly extending from a first end of the main portion. A second end of the main portion defines a receiving hole extending to the first holding portion. A sidewall of the main portion defines an opening. An elastic blocking piece extends from a side bounding the opening. A hook extends from an inside wall of the blocking piece. The inserting pole includes an inserting portion and a second holding portion perpendicularly extending from a first end of the inserting portion. The inserting portion defines a groove from a second end of the inserting portion extending to the second holding portion. A number of blocks extend from a bottom of the groove. The hook is selectively engaged with one of the blocks.

摘要翻译： 存储器保持装置包括主极和插入杆。 主杆包括主要部分和从主要部分的第一端垂直延伸的第一保持部分。 主要部分的第二端限定延伸到第一保持部分的接收孔。 主要部分的侧壁限定开口。 弹性阻挡件从限定开口的一侧延伸。 钩从阻塞件的内壁延伸。 插入杆包括插入部分和从插入部分的第一端垂直延伸的第二保持部分。 插入部分从延伸到第二保持部分的插入部分的第二端限定凹槽。 多个块从凹槽的底部延伸。 钩子选择性地与其中一个块接合。

公开(公告)号：US20100215544A1

公开(公告)日：2010-08-26

申请号：US12769338

申请日：2010-04-28

申请人： Seetharama C. Deevi ,  Fang Tian

发明人： Seetharama C. Deevi ,  Fang Tian

IPC分类号： B01J19/00 ,  H01L41/22

CPC分类号： G01N29/022 ,  G01N33/0047 ,  G01N2291/0255 ,  G01N2291/0256 ,  Y10T436/170769

摘要： A method and system for detecting tobacco-specific nitrosamines. The method includes exposing at least one microcantilever beam to a medium, which may contain tobacco-specific nitrosamines, and measuring a deflection of the microcantilever beam, wherein the deflection indicates a presence of tobacco-specific nitrosamines in the medium. The at least one microcantilever beam can include a silicon base layer and a gold-coated receptor layer with a plurality of thiol molecules having a sulfur head and carboxyl-terminated group. The at least one microcantilever beam can include a silicon base layer and a metal or metal oxide coated receptor layer. Alternatively, the microcantilever beam can be formed by co-absorbing tobacco-specific nitrosamines and silane molecules on a silicon microcantilever surface, wherein the template molecules of tobacco-specific nitrosamines physically co-adsorb between the silane molecules. The template molecules of tobacco-specific nitrosamines are then washed away with a solvent to form a silane monolayer having tobacco-specific nitrosamine cavities.

摘要翻译： 一种用于检测烟草特异性亚硝胺的方法和系统。 该方法包括将至少一个微悬臂梁暴露于介质中，该培养基可含有烟草特异性亚硝胺，并测量微悬臂梁的挠曲，其中偏转指示介质中烟草特异性亚硝胺的存在。 所述至少一个微悬臂梁可以包括具有硫头和羧基封端基团的多个硫醇分子的硅基层和金涂覆的受体层。 所述至少一个微悬臂梁可以包括硅基层和金属或金属氧化物涂覆的受体层。 或者，可以通过在硅微悬臂梁表面上共同吸收烟草特异性亚硝胺和硅烷分子来形成微悬臂梁，其中烟草特异性亚硝胺的模板分子物理共吸附在硅烷分子之间。 然后用溶剂洗涤烟草特异性亚硝胺的模板分子以形成具有烟草特异性亚硝胺腔的硅烷单层。

公开(公告)号：US09516988B2

公开(公告)日：2016-12-13

申请号：US14343337

申请日：2012-09-07

申请人： Weidong Zhao ,  Fang Tian

发明人： Weidong Zhao ,  Fang Tian

IPC分类号： F16L27/08 ,  A47L15/42 ,  A47L15/23

CPC分类号： A47L15/4278 ,  A47L15/23 ,  F16L27/0804 ,  F16L27/0849

摘要： A water spraying apparatus of a dishwasher and the dishwasher comprising the water spraying apparatus are provided. The water spraying apparatus comprises a water source connecting pipe having a water outlet tube, a spraying arm having a water inlet tube, and a connecting device connecting the water source connecting pipe with the spraying arm, in which the connecting device comprises first and second semicircular fitting rings which are adapted to snap-fit with each other to form a connecting ring, the connecting ring is rotatably fitted over the water outlet tube of the water source connecting pipe and positioned in an axial direction of the connecting ring between the water inlet tube of the spraying arm and the water outlet tube of the water source connecting pipe.

摘要翻译： 提供了一种洗碗机的喷水装置和包括喷水装置的洗碗机。 喷水装置包括具有出水管的水源连接管，具有进水管的喷射臂和将水源连接管与喷射臂连接的连接装置，其中连接装置包括第一和第二半圆 所述连接环适于彼此卡扣配合以形成连接环，所述连接环可旋转地装配在所述水源连接管的出水管上，并且在所述连接环的轴向方向上位于所述进水管 的喷水臂和水源连接管的出水管。

公开(公告)号：US20080102532A1

公开(公告)日：2008-05-01

申请号：US11902041

申请日：2007-09-18

申请人： Seetharama Deevi ,  Fang Tian

发明人： Seetharama Deevi ,  Fang Tian

IPC分类号： G01N33/00 ,  B01J19/00 ,  B05D1/36 ,  B05D3/10

CPC分类号： G01N29/022 ,  G01N33/0047 ,  G01N2291/0255 ,  G01N2291/0256 ,  Y10T436/170769

摘要： A method and system for detecting tobacco-specific nitrosamines. The method includes exposing at least one microcantilever beam to a medium, which may contain tobacco-specific nitrosamines, and measuring a deflection of the microcantilever beam, wherein the deflection indicates a presence of tobacco-specific nitrosamines in the medium. The at least one microcantilever beam can include a silicon base layer and a gold-coated receptor layer with a plurality of thiol molecules having a sulfur head and carboxyl-terminated group. The at least one microcantilever beam can include a silicon base layer and a metal or metal oxide coated receptor layer. Alternatively, the microcantilever beam can be formed by co-absorbing tobacco-specific nitrosamines and silane molecules on a silicon microcantilever surface, wherein the template molecules of tobacco-specific nitrosamines physically co-adsorb between the silane molecules. The template molecules of tobacco-specific nitrosamines are then washed away with a solvent to form a silane monolayer having tobacco-specific nitrosamine cavities.

摘要翻译： 一种用于检测烟草特异性亚硝胺的方法和系统。 该方法包括将至少一个微悬臂梁暴露于介质中，该培养基可含有烟草特异性亚硝胺，并测量微悬臂梁的挠曲，其中偏转指示介质中烟草特异性亚硝胺的存在。 所述至少一个微悬臂梁可以包括具有硫头和羧基封端基团的多个硫醇分子的硅基层和金涂覆的受体层。 所述至少一个微悬臂梁可以包括硅基层和金属或金属氧化物涂覆的受体层。 或者，可以通过在硅微悬臂梁表面上共同吸收烟草特异性亚硝胺和硅烷分子来形成微悬臂梁，其中烟草特异性亚硝胺的模板分子物理共吸附在硅烷分子之间。 然后用溶剂洗涤烟草特异性亚硝胺的模板分子以形成具有烟草特异性亚硝胺腔的硅烷单层。

公开(公告)号：US20140299683A1

公开(公告)日：2014-10-09

申请号：US14343337

申请日：2012-09-07

申请人： Weidong Zhao ,  Fang Tian

发明人： Weidong Zhao ,  Fang Tian

IPC分类号： A47L15/42

CPC分类号： A47L15/4278 ,  A47L15/23 ,  F16L27/0804 ,  F16L27/0849

摘要： A water spraying apparatus of a diswasher and the diswasher comprising the water spraying apparatus are provided. The water spraying apparatus comprises a water source connecting pipe having a water outlet tube, a spraying arm having a water inlet tube, and a connecting device connecting the water source connecting pipe with the spraying arm, in which the connecting device comprises first and second semicircular fitting rings which are adapted to snap-fit with each other to form a connecting ring, the connecting ring is rotatably fitted over the water outlet tube of the water source connecting pipe and positioned in an axial direction of the connecting ring between the water inlet tube of the spraying arm and the water outlet tube of the water source connecting pipe.

摘要翻译： 提供了一种洗碗机的喷水装置和包括喷水装置的洗涤机。 喷水装置包括具有出水管的水源连接管，具有进水管的喷射臂和将水源连接管与喷射臂连接的连接装置，其中连接装置包括第一和第二半圆 所述连接环适于彼此卡扣配合以形成连接环，所述连接环可旋转地装配在所述水源连接管的出水管上，并且在所述连接环的轴向方向上位于所述进水管 的喷水臂和水源连接管的出水管。