公开(公告)号：US08732591B1

公开(公告)日：2014-05-20

申请号：US11937473

申请日：2007-11-08

申请人： Alexander Mendes Da Costa ,  Niniane Wang ,  Joey Chiu-Wen Liaw

发明人： Alexander Mendes Da Costa ,  Niniane Wang ,  Joey Chiu-Wen Liaw

IPC分类号： G06F3/048 ,  G06F7/00 ,  G06F17/30

CPC分类号： H04L67/10 ,  G06F3/0481 ,  G06F3/0484 ,  G06F17/241

摘要： A computer-implemented method of enabling participation by a first client and a second client in a communication session in a multi-dimensional virtual environment, the multi-dimensional virtual environment having first and second avatars respectively associated with the first and second clients and a plurality of objects distinct from the avatars. The method includes receiving from the first client a first annotation associated with a first object of the plurality of objects, transmitting the first annotation to the second client for display at the second client in association with the first object, receiving from the second client a second annotation associated with a second object of the plurality of objects, and transmitting the second annotation to the first client for display at the first client in association with the second object.

摘要翻译： 一种能够在多维虚拟环境中由第一客户机和第二客户端参与通信会话的计算机实现的方法，所述多维虚拟环境具有分别与第一和第二客户端相关联的第一和第二化身，以及多个 与化身不同的物体。 所述方法包括从所述第一客户端接收与所述多个对象中的第一对象相关联的第一注释，将所述第一注释发送到所述第二客户端以与所述第一对象相关联地在所述第二客户端处显示，从所述第二客户端接收第二注释 注释与多个对象中的第二对象相关联，并且将第二注释发送到第一客户端，以便与第二对象相关联地在第一客户端处显示。

公开(公告)号：US20050026430A1

公开(公告)日：2005-02-03

申请号：US10632873

申请日：2003-08-01

申请人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

发明人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  Y10S438/963

摘要： The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.

摘要翻译： 本发明包括使用等离子体蚀刻室中的气体混合物的等离子体来选择性地蚀刻在衬底上形成的低k电介质材料的方法。 气体混合物包括富氟碳氟化合物或氢氟烃气体，含氮气体和一种或多种添加剂气体，例如富氢氢氟烃气体，惰性气体和/或碳 - 氧气体。 该方法提供了大于约5:1的光致抗蚀剂掩模蚀刻选择比的低k电介质，大于10:1的低k电介质到阻挡层/衬层蚀刻选择比，以及低k电介质蚀刻速率 高于约4000Å/ min。

公开(公告)号：US08631417B1

公开(公告)日：2014-01-14

申请号：US13620083

申请日：2012-09-14

申请人： Alexander Mendes Da Costa ,  Phillip Craig Keslin ,  Joey Chiu-Wen Liaw ,  Vernon Melvin Guymon, III ,  Niniane Wang

发明人： Alexander Mendes Da Costa ,  Phillip Craig Keslin ,  Joey Chiu-Wen Liaw ,  Vernon Melvin Guymon, III ,  Niniane Wang

IPC分类号： G06F3/00 ,  G06F15/16

CPC分类号： H04L65/403 ,  A63F13/335 ,  A63F13/52 ,  G06F9/54 ,  G06T15/005 ,  G06T2200/16 ,  H04L12/1827 ,  H04L67/02 ,  H04L67/14 ,  H04L67/24 ,  H04L67/38 ,  H04N21/4788 ,  H04N21/632

摘要： A computer-implemented method of enabling communication between a first client and a second client mutually participating in a communication session, in which the second client, but not the first client, has an application for rendering multi-dimensional virtual environments, is claimed. The method includes transmitting to the second client information representing a plurality of objects in a multi-dimensional virtual environment, wherein the multi-dimensional virtual environment is rendered at the second client, and transmitting to the first client an image for display by a first client application in a web page, the image including a representation of the multi-dimensional virtual environment rendered at the second client. The second client has an application, distinct from the first client application, for rendering multi-dimensional virtual environments.

摘要翻译： 要求保证在第一客户机和第二客户机之间进行通信的计算机实现的方法，所述方法能够相互参与通信会话，其中第二客户端而不是第一客户端具有呈现多维虚拟环境的应用。 该方法包括在多维虚拟环境中向第二客户端发送表示多个对象的信息，其中在第二客户端处呈现多维虚拟环境，并向第一客户端传送图像以供第一客户端显示 应用在网页中，该图像包括在第二客户端呈现的多维虚拟环境的表示。 第二个客户端具有与第一个客户端应用程序不同的应用程序，用于渲染多维虚拟环境。

公开(公告)号：US08375397B1

公开(公告)日：2013-02-12

申请号：US11936053

申请日：2007-11-06

申请人： Alexander Mendes da Costa ,  Phillip Craig Keslin ,  Joey Chiu-Wen Liaw ,  Vernon Melvin Guymon, III ,  Niniane Wang

发明人： Alexander Mendes da Costa ,  Phillip Craig Keslin ,  Joey Chiu-Wen Liaw ,  Vernon Melvin Guymon, III ,  Niniane Wang

IPC分类号： G06F3/00 ,  G06F7/00 ,  G06F3/048

CPC分类号： H04L65/403 ,  A63F13/335 ,  A63F13/52 ,  G06F9/54 ,  G06T15/005 ,  G06T2200/16 ,  H04L12/1827 ,  H04L67/02 ,  H04L67/14 ,  H04L67/24 ,  H04L67/38 ,  H04N21/4788 ,  H04N21/632

摘要： A computer-implemented method of enabling communication between a first client and a second client mutually participating in a communication session, in which the second client, but not the first client, has an application for rendering multi-dimensional virtual environments, is claimed. The method includes transmitting to the second client information representing a plurality of objects in a multi-dimensional virtual environment, wherein the multi-dimensional virtual environment is rendered at the second client, and transmitting to the first client an image for display by a first client application in a web page, the image including a representation of the multi-dimensional virtual environment rendered at the second client. The second client has an application, distinct from the first client application, for rendering multi-dimensional virtual environments.

公开(公告)号：US08595299B1

公开(公告)日：2013-11-26

申请号：US11936447

申请日：2007-11-07

申请人： Niniane Wang ,  Joey Chiu-Wen Liaw ,  Alexander Mendes Da Costa ,  Darin Tay ,  Vernon Melvin Guymon, III

发明人： Niniane Wang ,  Joey Chiu-Wen Liaw ,  Alexander Mendes Da Costa ,  Darin Tay ,  Vernon Melvin Guymon, III

IPC分类号： G06F15/16 ,  G06F3/048 ,  G06F17/00

CPC分类号： H04N21/8352 ,  H04L12/1827 ,  H04L67/24 ,  H04N21/23109 ,  H04N21/25866 ,  H04N21/4312 ,  H04N21/4331 ,  H04N21/44012 ,  H04N21/4782 ,  H04N21/4788 ,  H04N21/632 ,  H04N21/64322 ,  H04N21/6547 ,  H04N21/658 ,  H04N21/6582 ,  H04N21/8146

摘要： A computer-implemented method enables participation by a plurality of clients in a first multi-dimensional virtual environment and a second multi-dimensional virtual environment. A first client sets an object in the multi-dimensional virtual environment system to function as a portal to a second multi-dimensional virtual environment. The portal can be used by the first client and/or the second client to enter the second multi-dimensional virtual environment. A server system receives from the first client data indicating that a first object in the first multi-dimensional virtual environment has been set to function as a portal to the second multi-dimensional virtual environment, and receives from a second client participating in the first multi-dimensional virtual environment data indicating that the second client has invoked the first object. The server system transmits to the second client data representing objects in the second multi-dimensional virtual environment.

摘要翻译： 计算机实现的方法使多个客户端能够参与第一多维虚拟环境和第二多维虚拟环境。 第一客户端在多维虚拟环境系统中设置对象以用作第二多维虚拟环境的门户。 门户可以由第一客户端和/或第二客户端使用以进入第二多维虚拟环境。 服务器系统从第一客户端接收指示第一多维虚拟环境中的第一对象已被设置为用作第二多维虚拟环境的入口的数据，并从参与第一多维虚拟环境的第二客户端接收 指示第二个客户端调用了第一个对象的维度虚拟环境数据。 服务器系统向第二客户端发送表示第二多维虚拟环境中的对象的数据。

公开(公告)号：US20080145998A1

公开(公告)日：2008-06-19

申请号：US11531493

申请日：2006-09-13

申请人： GERARDO A. DELGADINO ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

发明人： GERARDO A. DELGADINO ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC分类号： H01L21/76

CPC分类号： H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

摘要翻译： 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔是 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US07132369B2

公开(公告)日：2006-11-07

申请号：US10745344

申请日：2003-12-22

申请人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

发明人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC分类号： H01L21/302

CPC分类号： H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

摘要翻译： 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US07435685B2

公开(公告)日：2008-10-14

申请号：US11531493

申请日：2006-09-13

申请人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

发明人： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC分类号： H01L21/311

CPC分类号： H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

摘要翻译： 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US07256134B2

公开(公告)日：2007-08-14

申请号：US10632873

申请日：2003-08-01

申请人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

发明人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  Y10S438/963

摘要： The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.

摘要翻译： 本发明包括使用等离子体蚀刻室中的气体混合物的等离子体来选择性地蚀刻形成在衬底上的低k电介质材料的方法。 气体混合物包括富氟碳氟化合物或氢氟烃气体，含氮气体和一种或多种添加剂气体，例如富氢氢氟烃气体，惰性气体和/或碳 - 氧气体。 该方法提供了大于约5:1的光致抗蚀剂掩模蚀刻选择比的低k电介质，大于10:1的低k电介质到阻挡层/衬层蚀刻选择比，以及低k电介质蚀刻速率 高于约4000Å/ min。