Application specific integrated circuit (ASIC) test screens and selection of such screens

    公开(公告)号:US09760673B2

    公开(公告)日:2017-09-12

    申请号:US15012331

    申请日:2016-02-01

    CPC classification number: G06F17/5081 G06F2217/64

    Abstract: Various embodiments include approaches for analyzing a customer design for an application specific integrated circuit (ASIC). In some cases, an approach includes: determining performance requirements of the customer design; querying a test screen database for the performance requirements of the customer design, the test screen database having failure thresholds and associated test screens for detecting the failure thresholds for a set of ASIC devices; generating a filter database including select failure thresholds and associated test screens for the performance requirements of the customer design; and selecting a set of test screens from the filter database based upon a yield cost criteria in forming the ASIC.

    Application specific integrated circuit (ASIC) test screens and selection of such screens

    公开(公告)号:US20170220727A1

    公开(公告)日:2017-08-03

    申请号:US15012331

    申请日:2016-02-01

    CPC classification number: G06F17/5081 G06F2217/64

    Abstract: Various embodiments include approaches for analyzing a customer design for an application specific integrated circuit (ASIC). In some cases, an approach includes: determining performance requirements of the customer design; querying a test screen database for the performance requirements of the customer design, the test screen database having failure thresholds and associated test screens for detecting the failure thresholds for a set of ASIC devices; generating a filter database including select failure thresholds and associated test screens for the performance requirements of the customer design; and selecting a set of test screens from the filter database based upon a yield cost criteria in forming the ASIC.

    Threshold voltage (VT)-type transistor sensitive and/or fan-out sensitive selective voltage binning

    公开(公告)号:US09653330B1

    公开(公告)日:2017-05-16

    申请号:US15015535

    申请日:2016-02-04

    CPC classification number: G01R31/31718 H01L22/14 H01L22/20 H01L22/34

    Abstract: Disclosed are methods for performing threshold voltage (VT)-type transistor sensitive and/or fan-out sensitive selective voltage binning (SVB) to improve SVB accuracy and, thereby product yield and reliability. In the methods, a process distribution for an integrated circuit chip design is divided into process windows, each associated with a corresponding performance range and a corresponding minimum supply voltage. First performance measurements are acquired from first performance monitors associated with first transistors on chips manufactured according to the design. Based on the first performance measurements, the chips are assigned to groups corresponding to the process windows. Second performance measurements are also be acquired from second performance monitors associated with second transistors, which are on the chips and which have either a different VT-type or a different maximum fan-out than the first transistors. Based on the second performance measurements, a determination is made as to whether chip group reassignment is warranted.

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