Abstract:
Disclosed are electromigration (EM)-aware integrated circuit (IC) design techniques, which consider EM early in the IC design process in order to generate, in a timely manner, an IC design that can be used to manufacture IC chips that will exhibit minimal EM fails for improved IC reliability. Specifically, prior to placement of library elements, EM-relevant information is acquired and used to define protected zones around at least some of the library elements. Once the protected zones are defined, the library elements are placed relative to power rails in a previously designed power delivery network (PDN) and this placement process is performed such that each library element is prevented from being placed in a protected zone around any other library element to avoid EM fails in the PDN. Optionally, this same EM-relevant information is used during subsequent synthesis of a clock distribution network to prevent EM fails therein.
Abstract:
Disclosed are temperature-aware integrated circuit (IC) design methods and systems, which establish a customized power delivery network (PDN) for an IC early in the design process in order to generate, in a timely manner, a final IC design layout that can be used to manufacture IC chips that will exhibit minimal hotspots. Specifically, prior to placement of library elements, an initial PDN is established and divided into sections. The library elements are placed. Then, potential hotspots associated with any of the sections are identified and a customized PDN for the IC is established to eliminate the hotspots. That is, for each section, a total power consumption amount is determined. When the total power consumption amount is greater than the threshold, a hotspot is indicated and the section is customized to eliminate the hotspot. Also disclosed is a resulting IC chip structure.
Abstract:
Disclosed are a system and method that control integrated circuit chip temperature using frequency scaling based on predetermined temperature-frequency settings. During integrated circuit chip operation, a controller causes a variable clock signal generator to adjust the frequency of a clock signal that coordinates operations of an integrated circuit chip based on the temperature of the integrated circuit chip and on predetermined temperature-frequency settings. The temperature-frequency settings are predetermined in order to ensure that the frequency of the clock signal, as adjusted, remains sufficiently high to meet a chip performance specification, but sufficiently low to prevent the temperature from rising above a predetermined maximum temperature in order to limit power consumption. Also disclosed is a method of generating such temperature-frequency settings during timing analysis.
Abstract:
Various embodiments include approaches for designing three-dimensional (3D) integrated circuits (ICs). In one embodiment, a system is configured to: read an electronic chip identification (ECID) for a plurality of dies formed from distinct wafer lots, the ECID indicating a process performance parameter for each distinct wafer lot; create a reference table mapping a back-bias voltage to be applied to each die to the process performance parameter for each distinct wafer lot; determine performance requirements of a customer design for the 3D IC structure; assemble the design of the 3D IC structure including a set of dies selected from at least two of the distinct wafer lots; and assign a back bias voltage to each die based upon the performance requirements of the customer design and the reference table.
Abstract:
Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax. The chips are sorted into different process windows, based on the voltage identified.
Abstract:
Disclosed are methods for improving integrated circuit (IC) chip reliability. IC chips are manufactured and sorted into groups corresponding to process windows within a process distribution for the design. Group fail rates are set for each group based on failure mechanism fail rates, which are set for multiple failure mechanisms. An overall fail rate is determined for the full process distribution based on the group fail rates. First contribution amounts of the groups to the overall fail rate and second contribution amounts of the failure mechanisms to the group fail rate of each group are determined. Based on an analysis of the contribution amounts, at least one specific failure mechanism is selected and targeted for improvement (i.e., changes directed to the specific failure mechanism(s) are proposed and implemented). Optionally, proposed change(s) are only implemented if they will be sufficient to meet a reliability requirement and/or will not be cost-prohibitive.
Abstract:
Aspects of the present disclosure include a computer-implemented method for identifying an operating temperature of an integrated circuit (IC), the method including using a computing device for: applying a test voltage to a test circuit embedded within the IC, the test circuit including a phase shift memory (PSM) element therein, wherein the PSM element crystallizes at a crystallization temperature from an amorphous phase having a first electrical resistance into a crystalline phase having a second electrical resistance, the second electrical resistance being less than the first electrical resistance; and identifying the IC as having operated above the crystallization temperature in response to a resistance of the test circuit at the test voltage being outside of the target operating range.
Abstract:
In the systems and methods, an identifier is generated for a printed circuit board (PCB), chips are connected to the PCB, and corresponding sets of programmable bits on the chips are programmed to match specific sections of the identifier. Due to the generation of the identifier and the programming of the corresponding sets of programmable bits on the chips to match specific sections of the identifier, the validity of the chips can be verified at any time during product life. For example, for each chip, its set of programmable bits can be read and, then, a determination can be made as to whether that set of programmable bits is indeed programmed to match a specific section of the identifier. Operation of the PCB can be allowed when all the chips are determined to be valid and prohibited when any of the chips are determined to be invalid (e.g., previously used).
Abstract:
Various embodiments include approaches for designing three-dimensional (3D) integrated circuits (ICs). In one embodiment, a system is configured to: read an electronic chip identification (ECID) for a plurality of dies formed from distinct wafer lots, the ECID indicating a process performance parameter for each distinct wafer lot; create a reference table mapping a back-bias voltage to be applied to each die to the process performance parameter for each distinct wafer lot; determine performance requirements of a customer design for the 3D IC structure; assemble the design of the 3D IC structure including a set of dies selected from at least two of the distinct wafer lots; and assign a back bias voltage to each die based upon the performance requirements of the customer design and the reference table.
Abstract:
Disclosed is a method wherein selective voltage binning and leakage power screening of integrated circuit (IC) chips are performed. Additionally, pre-test power-optimized bin reassignments are made on a chip-by-chip basis. Specifically, a leakage power measurement of an IC chip selected from a voltage bin can is compared to a bin-specific leakage power screen value of the next slower voltage bin. If the leakage power measurement is higher, the IC chip will be left in the voltage bin to which it is currently assigned. If the leakage power measurement is lower, the IC chip will be reassigned to that next slower voltage bin. These processes can be iteratively repeated until no slower voltage bins are available or the IC chip cannot be reassigned. IC chips can subsequently be tested according to testing parameters, including the minimum test voltages, associated with the voltage bins to which they are finally assigned.