公开(公告)号：US10802393B2

公开(公告)日：2020-10-13

申请号：US15784408

申请日：2017-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Obert R. Wood, II ,  Genevieve Beique ,  Yulu Chen ,  Erik Verduijn ,  Francis Goodwin

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

公开(公告)号：US09547232B2

公开(公告)日：2017-01-17

申请号：US14560688

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Harry J. Levinson ,  Obert R. Wood, II

IPC: G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/70916

Abstract: Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Abstract translation: 本文公开了在极紫外（EUV）光刻工艺中使用的各种薄膜。 本文公开的EUV辐射装置包括掩模版，衬底支撑台，位于掩模版和衬底支撑台之间的防护薄膜组件，其中防护薄膜组件包括形成在气凝胶格栅上的气凝胶格栅和膜，以及适于 以产生将要通过防护薄膜穿过掩模版的约20nm或更小的波长的辐射。

公开(公告)号：US20160161857A1

公开(公告)日：2016-06-09

申请号：US14560688

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Harry J. Levinson ,  Obert R. Wood, II

IPC: G03F7/20 ,  G03F1/22

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/70916

Abstract: Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Abstract translation: 本文公开了在极紫外（EUV）光刻工艺中使用的各种薄膜。 本文公开的EUV辐射装置包括掩模版，衬底支撑台，位于掩模版和衬底支撑台之间的防护薄膜组件，其中防护薄膜组件包括形成在气凝胶格栅上的气凝胶格栅和膜，以及适于 以产生将要通过防护薄膜穿过掩模版的约20nm或更小的波长的辐射。