公开(公告)号：US10468149B2

公开(公告)日：2019-11-05

申请号：US15424200

申请日：2017-02-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yulu Chen ,  Francis Goodwin ,  Jed Rankin ,  Lei Sun ,  Obert Reeves Wood, II

IPC: G02B5/08 ,  G02B5/20 ,  F21V9/04 ,  F21V9/06 ,  G21K1/06 ,  G03F1/24 ,  G02B27/00 ,  G03F7/20 ,  G01M11/00

Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

公开(公告)号：US20180226166A1

公开(公告)日：2018-08-09

申请号：US15424200

申请日：2017-02-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yulu Chen ,  Francis Goodwin ,  Jed Rankin ,  Lei Sun ,  Obert Reeves Wood, II

IPC: G21K1/06 ,  G02B19/00 ,  G03F1/24 ,  G02B27/00 ,  G02B5/08 ,  G01M11/00

CPC classification number: G21K1/062 ,  G01M11/005 ,  G02B5/085 ,  G02B5/0891 ,  G02B27/0012 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70958 ,  G21K2201/067

Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

公开(公告)号：US10802393B2

公开(公告)日：2020-10-13

申请号：US15784408

申请日：2017-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Obert R. Wood, II ,  Genevieve Beique ,  Yulu Chen ,  Erik Verduijn ,  Francis Goodwin

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.