公开(公告)号：US10802393B2

公开(公告)日：2020-10-13

申请号：US15784408

申请日：2017-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Obert R. Wood, II ,  Genevieve Beique ,  Yulu Chen ,  Erik Verduijn ,  Francis Goodwin

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

公开(公告)号：US10564554B2

公开(公告)日：2020-02-18

申请号：US15874039

申请日：2018-01-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Liang Cao ,  Jed H. Rankin ,  Jie Zhang ,  Yulu Chen

IPC: G03F7/20 ,  G06F17/50 ,  G03F1/42 ,  G03F7/26 ,  G03F9/00 ,  G03F1/36 ,  G03F1/84 ,  G03F1/70 ,  H01L21/027 ,  H01L21/66

Abstract: Embodiments of a method include: converting at least one image of a printed mask to a plurality of representative contours, each corresponding to mask patterns in the printed mask; determining whether the printed mask includes a printing defect based on whether the plurality of representative contours violates a set of contour tolerances for the printed mask; in response to at least one of plurality of representative contours violating at least one of the set of contour tolerances: identifying a location where a representative contour violates the at least one of the set of contour tolerances, and generating an instruction to adjust a layout for the printed mask, based on the violating of the at least one of the set of contour tolerances; and in response to none of the plurality of representative contours violating the set of contour tolerances, flagging a layout for the printed mask as compliant.

公开(公告)号：US10332745B2

公开(公告)日：2019-06-25

申请号：US15597277

申请日：2017-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Wenhui Wang ,  Yulu Chen ,  Erik Verduijn ,  Zhengqing John Qi ,  Guoxiang Ning ,  Daniel J. Dechene

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  H01L21/3065

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

公开(公告)号：US20190258157A1

公开(公告)日：2019-08-22

申请号：US15902544

申请日：2018-02-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yulu Chen ,  Oktawian Sobieraj ,  SherJang Singh

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20 ,  H01L21/31

Abstract: Disclosed is a photolithography (e.g., extreme ultraviolet (EUV) photolithography) system that incorporates a photomask-pellicle apparatus with an angled pellicle. The apparatus includes a photomask structure and a pellicle structure that is mounted on the photomask structure. The pellicle is essentially transparent to a given-type radiation (e.g., EUV radiation), is essentially reflective to out-of-band (OOB) radiation, and is positioned at an angle relative to the photomask. When radiation is directed toward the photomask-pellicle apparatus during a photolithographic exposure process, beams that are reflected and diffracted off of the patterned surface of the photomask structure are directed toward a target semiconductor wafer and beams that are reflected and diffracted off of the pellicle are directed away from the target semiconductor wafer. Aiming the OOB radiation away from the target semiconductor wafer improves imaging quality by minimizing the negative impact of OOB radiation. Also disclosed is an associated photolithography method.

公开(公告)号：US20190056651A1

公开(公告)日：2019-02-21

申请号：US15681491

申请日：2017-08-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Erik Verduijn ,  Yulu Chen ,  Lars Liebmann ,  Pawitter Mangat

IPC: G03F1/24 ,  G03F1/72 ,  G03F1/84 ,  G03F7/40 ,  H01L21/033 ,  H01L21/3213

Abstract: A photomask includes a substrate having a top surface. A topographical feature is formed on the top surface of the substrate. The topographical feature may be a bump or a pit created on the top surface of the substrate. A reflector is formed on the top surface of the substrate over the topographical feature. The topographical feature warps the reflector in order to generate phase and/or amplitude gradients in light reflected off the reflector. An absorber is patterned on the reflector defining lithographic patterns for a resist material. The gradients in the light reflected off the reflector create shadow regions during lithography of the resist material using extreme ultraviolet (EUV) light.

公开(公告)号：US20180337045A1

公开(公告)日：2018-11-22

申请号：US15597277

申请日：2017-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Wenhui Wang ,  Yulu Chen ,  Erik Verduijn ,  Zhengqing John Qi ,  Guoxiang Ning ,  Daniel J. Dechene

IPC: H01L21/033 ,  H01L23/528 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/0276 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/76879

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

公开(公告)号：US20180226166A1

公开(公告)日：2018-08-09

申请号：US15424200

申请日：2017-02-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yulu Chen ,  Francis Goodwin ,  Jed Rankin ,  Lei Sun ,  Obert Reeves Wood, II

IPC: G21K1/06 ,  G02B19/00 ,  G03F1/24 ,  G02B27/00 ,  G02B5/08 ,  G01M11/00

CPC classification number: G21K1/062 ,  G01M11/005 ,  G02B5/085 ,  G02B5/0891 ,  G02B27/0012 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70958 ,  G21K2201/067

Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

公开(公告)号：US09911604B1

公开(公告)日：2018-03-06

申请号：US15413823

申请日：2017-01-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Xunyuan Zhang ,  Ruilong Xie ,  Yulu Chen

IPC: H01L21/311 ,  H01L21/027 ,  H01L29/66

CPC classification number: H01L21/0337 ,  H01L21/0274 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L29/785

Abstract: Disclosed are methods of using a lithography-lithography-etch (LLE) technique to form a sidewall spacer pattern for patterning a target layer. In the methods, a photoresist layer is patterned by performing multiple lithographic processes with different photomasks, including a first photomask with a first pattern of parallel bars separated by spaces and a second photomask with a second pattern of opening(s) oriented in an essentially perpendicular direction as compared to the bar(s). The photoresist layer is then developed, creating a third pattern. The third pattern is transferred into a mandrel layer below to form mandrels of different lengths. Then, sidewall spacers are formed on the mandrels and the mandrels are selectively removed to form the sidewall spacer pattern. This sidewall spacer pattern is subsequently used in a sidewall image transfer (SIT) process to pattern a target layer below.

公开(公告)号：US10468149B2

公开(公告)日：2019-11-05

申请号：US15424200

申请日：2017-02-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yulu Chen ,  Francis Goodwin ,  Jed Rankin ,  Lei Sun ,  Obert Reeves Wood, II

IPC: G02B5/08 ,  G02B5/20 ,  F21V9/04 ,  F21V9/06 ,  G21K1/06 ,  G03F1/24 ,  G02B27/00 ,  G03F7/20 ,  G01M11/00

Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

公开(公告)号：US20190219933A1

公开(公告)日：2019-07-18

申请号：US15874039

申请日：2018-01-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Liang Cao ,  Jed H. Rankin ,  Jie Zhang ,  Yulu Chen

IPC: G03F7/20 ,  G06F17/50 ,  G03F1/42 ,  G03F7/26 ,  G03F9/00

Abstract: Embodiments of a method include: converting at least one image of a printed mask to a plurality of representative contours, each corresponding to mask patterns in the printed mask; determining whether the printed mask includes a printing defect based on whether the plurality of representative contours violates a set of contour tolerances for the printed mask; in response to at least one of plurality of representative contours violating at least one of the set of contour tolerances: identifying a location where a representative contour violates the at least one of the set of contour tolerances, and generating an instruction to adjust a layout for the printed mask, based on the violating of the at least one of the set of contour tolerances; and in response to none of the plurality of representative contours violating the set of contour tolerances, flagging a layout for the printed mask as compliant.