公开(公告)号：US20180145160A1

公开(公告)日：2018-05-24

申请号：US15360295

申请日：2016-11-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Renata A. CAMILLO-CASTILLO ,  Vibhor JAIN ,  Qizhi LIU ,  Anthony K. STAMPER

IPC: H01L29/737 ,  H01L27/082 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/04 ,  H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H03F3/21

CPC classification number: H01L29/7375 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/268 ,  H01L21/324 ,  H01L21/8222 ,  H01L27/0823 ,  H01L27/0825 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66242 ,  H01L29/7371 ,  H03F3/21 ,  H03F2200/294

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to heterojunction bipolar transistor device integration schemes on a same wafer and methods of manufacture. The structure includes: a power amplifier (PA) device comprising a base, a collector and an emitter on a wafer; and a low-noise amplifier (LNA) device comprising a base, a collector and an emitter on the wafer, with the emitter having a same crystalline structure as the base.