公开(公告)号：US20170229450A1

公开(公告)日：2017-08-10

申请号：US15499222

申请日：2017-04-27

Applicant: GlobalFoundries Inc.

Inventor： Thomas N. ADAM ,  Kangguo CHENG ,  Bruce B. DORIS ,  Ali KHAKIFROOZ ,  Alexander REZNICEK

IPC: H01L27/088 ,  H01L21/28 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/167

CPC classification number: H01L27/088 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/28008 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/84 ,  H01L29/167 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions of the first semiconductor device.

公开(公告)号：US20160064523A1

公开(公告)日：2016-03-03

申请号：US14937029

申请日：2015-11-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Thomas N. ADAM ,  Kangguo CHENG ,  Ali KHAKIFIROOZ ,  Jinghong LI ,  Alexander REZNICEK

IPC: H01L29/66 ,  H01L29/08 ,  H01L21/02

CPC classification number: H01L29/66636 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/84 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/78

Abstract: A semiconductor structure including a semiconductor wafer. The semiconductor wafer includes a gate structure, a first trench in the semiconductor wafer adjacent to a first side of the gate structure and a second trench adjacent to a second side of the gate structure, the first and second trenches filled with a doped epitaxial silicon to form a source in the filled first trench and a drain in the filled second trench such that each of the source and drain are recessed and have an inverted facet. In a preferred exemplary embodiment, the epitaxial silicon is doped with boron.