公开(公告)号：US20170229450A1

公开(公告)日：2017-08-10

申请号：US15499222

申请日：2017-04-27

Applicant: GlobalFoundries Inc.

Inventor： Thomas N. ADAM ,  Kangguo CHENG ,  Bruce B. DORIS ,  Ali KHAKIFROOZ ,  Alexander REZNICEK

IPC: H01L27/088 ,  H01L21/28 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/167

CPC classification number: H01L27/088 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/28008 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/84 ,  H01L29/167 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions of the first semiconductor device.

公开(公告)号：US20150024572A1

公开(公告)日：2015-01-22

申请号：US13945445

申请日：2013-07-18

Applicant: INTERNATIONAL BUSINESS MACHIES CORPORATION ,  GLOBALFOUNDRIES Inc.

Inventor： Ajey P. JACOB ,  Kangguo CHENG ,  Bruce B. DORIS ,  Nicolas LOUBET ,  Prasanna KHARE ,  Ramachandra DIVAKARUNI

IPC: H01L21/762

CPC classification number: H01L21/76243 ,  H01L21/302 ,  H01L21/76267 ,  H01L21/8238 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/105 ,  H01L27/1211 ,  H01L29/7848 ,  H01L29/785

Abstract: Semiconductor fabrication methods are provided which include facilitating fabricating semiconductor fin structures by: providing a wafer with at least one fin extending above a substrate, the at least one fin including a first layer disposed above a second layer; mechanically stabilizing the first layer; removing at least a portion of the second layer of the fin(s) to create a void below the first layer; filling the void, at least partially, below the first layer with an isolation material to create an isolation layer within the fin(s); and proceeding with forming a fin device(s) of a first architectural type in a first fin region of the fin(s), and a fin device(s) of a second architectural type in a second fin region of the fin(s), where the first architectural type and the second architectural type are different fin device architectures.

Abstract translation: 提供了半导体制造方法，其包括：通过以下方式制造半导体鳍片结构：提供具有在衬底上延伸的至少一个翅片的晶片，所述至少一个鳍片包括设置在第二层上方的第一层; 机械稳定第一层; 去除所述翅片的所述第二层的至少一部分以在所述第一层下面形成空隙; 至少部分地用隔离材料填充第一层下面的空隙，以在散热片内产生隔离层; 并且在翅片的第一翅片区域中形成第一结构类型的翅片装置，并且在翅片的第二翅片区域中形成第二结构类型的翅片装置， ，其中第一种架构类型和第二种架构类型是不同的鳍设备架构。