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公开(公告)号:US10043708B2
公开(公告)日:2018-08-07
申请号:US15347119
申请日:2016-11-09
Applicant: GLOBALFOUNDRIES INC.
Inventor: Viraj Sardesai , Suraj K. Patil , Scott Beasor , Vimal Kumar Kamineni
IPC: H01L29/40 , H01L21/768 , H01L23/522 , H01L23/532
Abstract: A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation.
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公开(公告)号:US10580875B2
公开(公告)日:2020-03-03
申请号:US15873565
申请日:2018-01-17
Applicant: GLOBALFOUNDRIES INC.
Inventor: Hui Zang , Guowei Xu , Keith Tabakman , Viraj Sardesai
IPC: H01L29/417 , H01L29/66 , H01L21/28 , H01L21/311 , H01L21/768 , H01L27/088 , H01L21/8234
Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and/or drain metallization features, and separated from the gate structures by the spacers.
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公开(公告)号:US20180130702A1
公开(公告)日:2018-05-10
申请号:US15345858
申请日:2016-11-08
Applicant: GLOBALFOUNDRIES Inc.
Inventor: Suraj K. Patil , Viraj Sardesai
IPC: H01L21/768 , H01L23/522 , H01L23/532
CPC classification number: H01L21/76849 , H01L21/76883 , H01L23/53209
Abstract: Structures that include cobalt metallization and methods of forming such structures. A feature is located inside an opening in a dielectric layer and a cap layer located on a top surface of the feature. The feature is composed of cobalt, and the cap layer is composed of ruthenium or a cobalt-containing alloy.
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