公开(公告)号：US20180047648A1

公开(公告)日：2018-02-15

申请号：US15237066

申请日：2016-08-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhuojie Wu ,  Erdem Kaltalioglu

IPC: H01L21/66

CPC classification number: H01L22/34 ,  H01L22/14 ,  H01L22/32 ,  H01L23/585 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3512

Abstract: A sensor for an integrated circuit (IC) structure is disclosed. The sensor includes a sensor layer in a layer of the IC structure, the sensor layer including: a first conductive structure disposed proximate a perimeter of the IC structure; and a second conductive structure disposed parallel to the first conductive structure and proximate the perimeter of the IC structure. The sensor also includes a set of interdigitating conductive elements including a first plurality of conductive elements electrically coupled to the first conductive structure interdigitating with a second plurality of conductive elements electrically coupled to the second conductive structure.

公开(公告)号：US09947602B2

公开(公告)日：2018-04-17

申请号：US15237066

申请日：2016-08-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhuojie Wu ,  Erdem Kaltalioglu

IPC: H01L21/66

CPC classification number: H01L22/34 ,  H01L22/14 ,  H01L22/32 ,  H01L23/585 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3512

Abstract: A sensor for an integrated circuit (IC) structure is disclosed. The sensor includes a sensor layer in a layer of the IC structure, the sensor layer including: a first conductive structure disposed proximate a perimeter of the IC structure; and a second conductive structure disposed parallel to the first conductive structure and proximate the perimeter of the IC structure. The sensor also includes a set of interdigitating conductive elements including a first plurality of conductive elements electrically coupled to the first conductive structure interdigitating with a second plurality of conductive elements electrically coupled to the second conductive structure.

公开(公告)号：US10770407B2

公开(公告)日：2020-09-08

申请号：US16240436

申请日：2019-01-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhuojie Wu ,  Cathryn J. Christiansen ,  Erdem Kaltalioglu ,  Ping-Chuan Wang ,  Ronald G. Filippi, Jr. ,  Eric D. Hunt-Schroeder ,  Nicholas A. Polomoff

IPC: H01L23/00 ,  H01L23/538 ,  G01N27/12

Abstract: An integrated circuit (IC) structure includes a back end of line (BEOL) stack on a substrate, the BEOL stack having a plurality of metal layers therein and a plurality of inter-level dielectric (ILD) layers therein. The plurality of metal layers includes a lowermost metal layer and an uppermost metal layer. A pair of metal guard structures proximate a perimeter of the BEOL stack concentrically surrounds the active circuitry. Each metal guard structure includes a continuous metal fill between the lowermost metal layer and the uppermost metal layer of the plurality of metal layers. A set of interdigitating conductive elements within one of the plurality of metal layers includes a first plurality of conductive elements electrically coupled to one of the pair of metal guard structures interdigitating with a second plurality of conductive elements electrically coupled to the other of the pair of metal guard structures.

公开(公告)号：US20200219826A1

公开(公告)日：2020-07-09

申请号：US16240436

申请日：2019-01-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhuojie Wu ,  Cathryn J. Christiansen ,  Erdem Kaltalioglu ,  Ping-Chuan Wang ,  Ronald G. Filippi, JR. ,  Eric D. Hunt-Schroeder ,  Nicholas A. Polomoff

IPC: H01L23/00 ,  G01N27/12 ,  H01L23/538

Abstract: An integrated circuit (IC) structure includes a back end of line (BEOL) stack on a substrate, the BEOL stack having a plurality of metal layers therein and a plurality of inter-level dielectric (ILD) layers therein. The plurality of metal layers includes a lowermost metal layer and an uppermost metal layer. A pair of metal guard structures proximate a perimeter of the BEOL stack concentrically surrounds the active circuitry. Each metal guard structure includes a continuous metal fill between the lowermost metal layer and the uppermost metal layer of the plurality of metal layers. A set of interdigitating conductive elements within one of the plurality of metal layers includes a first plurality of conductive elements electrically coupled to one of the pair of metal guard structures interdigitating with a second plurality of conductive elements electrically coupled to the other of the pair of metal guard structures.