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    Process control of semiconductor fabrication based on spectra quality metrics
    1.
    发明授权
    Process control of semiconductor fabrication based on spectra quality metrics 有权

    公开(公告)号：US11300948B2

    公开(公告)日：2022-04-12

    申请号：US16454242

    申请日：2019-06-27

    Applicant: GLOBALFOUNDRIES INC. ,  NOVA LTD.

    Inventor： Taher Kagalwala ,  Alok Vaid ,  Shay Yogev ,  Matthew Sendelbach ,  Paul Isbester ,  Yoav Etzioni

    IPC: G05B19/418 ,  G05B13/02

    Abstract: A process control method for manufacturing semiconductor devices, including determining a quality metric of a production semiconductor wafer by comparing production scatterometric spectra of a production structure of the production wafer with reference scatterometric spectra of a reference structure of reference semiconductor wafers, the production structure corresponding to the reference structure, the reference spectra linked by machine learning to a reference measurement value of the reference structure, determining a process control parameter value (PCPV) of a wafer processing step, the PCPV determined based on measurement of the production wafer and whose contribution to the PCPV is weighted with a first predefined weight based on the quality metric, and based on a measurement of a different wafer and whose contribution to the PCPV is weighted with a second predefined weight based on the quality metric, and controlling, with the PCPV, the processing step during fabrication.

    Method and system for optical characterization of patterned samples
    2.
    发明授权
    Method and system for optical characterization of patterned samples 有权

    公开(公告)号：US11885737B2

    公开(公告)日：2024-01-30

    申请号：US17135924

    申请日：2020-12-28

    Applicant: NOVA LTD.

    Inventor： Dror Shafir ,  Gilad Barak ,  Shay Wolfling ,  Michal Haim Yachini ,  Matthew Sendelbach ,  Cornel Bozdog

    IPC: G01N21/21 ,  G01N21/47

    CPC classification number: G01N21/21 ,  G01N21/211 ,  G01N2021/4792 ,  G01N2201/061 ,  G01N2201/0683

    Abstract: A method and system are presented for use in measuring on patterned samples, aimed at determining asymmetry in the pattern. A set of at least first and second measurements on a patterned region of a sample is performed, where each of the measurements comprises: directing illuminating light onto the patterned region along an illumination channel and collecting light reflected from the illuminated region propagating along a collection channel to be detected, such that detected light from the same patterned region has different polarization states which are different from polarization of the illuminating light, and generating a measured data piece indicative of the light detected in the measurement. Thus, at least first and second measured data pieces are generated for the at least first and second measurements on the same patterned region. The at least first and second measured data pieces are analyzed and output data is generated being indicative of a condition of asymmetry in the patterned region.

    Metrology method and system
    4.
    发明授权
    Metrology method and system 有权

    公开(公告)号：US11450541B2

    公开(公告)日：2022-09-20

    申请号：US16650405

    申请日：2018-08-29

    Applicant: NOVA LTD.

    Inventor： Vladimir Machavariani ,  Michael Shifrin ,  Daniel Kandel ,  Victor Kucherov ,  Igor Ziselman ,  Ronen Urenski ,  Matthew Sendelbach

    IPC: H01L21/67 ,  G01B15/02 ,  G05B13/04 ,  G01N23/04 ,  G01N23/06

    Abstract: A metrology method for use in determining one or more parameters of a patterned structure, the method including providing raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode, and predetermined simulated TEM image data including data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and a simulated weight map including weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure, performing a fitting procedure between the raw measured TEM image data and the predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.

    Measuring complex structures in semiconductor fabrication
    6.
    发明授权
    Measuring complex structures in semiconductor fabrication 有权

    公开(公告)号：US10664638B1

    公开(公告)日：2020-05-26

    申请号：US16221631

    申请日：2018-12-17

    Applicant: GLOBALFOUNDRIES INC. ,  NOVA MEASURING INSTRUMENTS LTD.

    Inventor： Taher Kagalwala ,  Sridhar Mahendrakar ,  Matthew Sendelbach ,  Alok Vaid

    IPC: G06F30/3323 ,  H01L29/78 ,  H01L27/11 ,  G06F111/20 ,  G06F119/18

    Abstract: Measuring SRAM structures having FinFET transistors by obtaining, on a production semiconductor wafer, spectra of a SRAM production structure including FinFET fins and gates, identifying SRAM reference structure spectra corresponding to the spectra, the reference structure from measuring, on a reference semiconductor wafer, a reference structure including a layout of FinFET fins having gates, injecting, into an OCD model of the production structure, fin target parameter values, corresponding to the identified reference structure spectra, from measuring, on the reference wafer, a fin target including a layout of exposed FinFET fins lacking gates similar or identical to the reference structure layout, correspondence between the fin target parameter values and the reference structure spectra previously identified by ML, and determining measurement values for the FinFET gates of the production structure by fitting reference spectra associated with the production structure in the OCD model to the production structure spectra.

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